公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2003 | Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate | Chang, S.T.; Liu, Y.H.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | | | |
2005 | Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress | CHEE-WEE LIU ; Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | CHEE-WEE LIU ; Maikap, S.; Lee, M.H.; Chang, S.T.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | | | |
2001 | Effect of milling time on mechanical properties of Al<inf>2</inf>O<inf>3</inf>-NiAl composites | Tuan, W.H.; Chang, S.T.; Chou, W.B.; Pai, Y.P.; WEI-HSING TUAN | British Ceramic Transactions | | | |
2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
1999 | Effect of surface grinding on the strength of NiAl and Al<inf>2</inf>O<inf>3</inf>/NiAl composites | Chang, S.T.; Tuan, W.H.; You, H.C.; Lin, I.C.; WEI-HSING TUAN | Materials Chemistry and Physics | | | |
1998 | The effects of microstructure on the mechanical properties of Al2O3-NiAl composites | Tuan, W.H.; Chou, W.B.; You, H.C.; Chang, S.T.; TuanWH | Materials Chemistry and Physics | | | |
1998 | The effects of microstructure on the mechanical properties of Al<inf>2</inf>O<inf>3</inf>-NiAl composites | Tuan, W.H.; Chou, W.B.; You, H.C.; Chang, S.T.; WEI-HSING TUAN | Materials Chemistry and Physics | | | |
2007 | Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime | CHEE-WEE LIU ; Yang, Y.-J.; Chang, S.T.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | | | |
2002 | Energy band structure of strained Si 1-xC x alloys on Si (001) substrate | CHEE-WEE LIU ; Chang, S.T.; Lin, C.Y.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
2018 | Ferroelectric HfZrO&#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 15 | 14 | |
2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | | | |
2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. | Electron Devices Meeting, 2002. IEDM '02. Digest. International | 0 | 0 | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2010 | High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect | Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO | IEEE Photovoltaic Specialists Conference | | | |