公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 1 | 1 | |
2007 | Effects of electrostatic discharge high-field current impulse on oxide breakdown | JENN-GWO HWU | Journal of Applied Physics | 10 | 8 | |
1998 | Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area | Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 5 | 4 | |
1993 | Electrical Analysis of Wirings in Thin-Film Packaging (I) | Hwu, Jenn-Gwo ; Wu, Ruey-Beei | | | | |
1990 | Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency | Hwu, J.-G.; Lin, S.-T.; HwuJG | Circuits, Devices and Systems, IEE Proceedings G | | | |
1990 | Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V technique | JENN-GWO HWU | IEE proceedings. Part G. Electronic circuits and systems | | | |
2011 | Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor | Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 2 | 0 | |
2011 | Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
1986 | Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor | Hwu, Jenn-Gwo | | | | |
2004 | Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodization | JENN-GWO HWU | Solid-State Electronics | 9 | 8 | |
2003 | Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing | JENN-GWO HWU | IEEE Transactions on Electron Devices | 43 | 39 | |
2018 | Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric | P.K.Chang; JENN-GWO HWU | Applied Physics A | 9 | 8 | |
1994 | Eliminating the surface inversion layer under the field oxide by low pressure rapid thermal annealing | JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
2021 | Energy-Saving Logic Gates Utilizing Coupling Phenomenon between MIS(p) Tunneling Diodes | Chen J.H; Chen K.C; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2016 | Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor | JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 7 | 7 | |
2024 | Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack | Kao, Chi Yi; Lin, Jin Cheng; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | | | |
2018 | Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias | P.K.Chang; J.G.Hwu; JENN-GWO HWU | Journal of Applied Physics, | 0 | 0 | |
1996 | Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 11 | 10 | |
2021 | Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage with Biased Inner Gate | Huang C.-Y; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
2016 | Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric | J.Y.Chen; W.C.Kao; JENN-GWO HWU | Applied Physics A | 1 | 1 | |