Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
2006 | III-V MOSFET's with advanced high 庥 dielectrics | MINGHWEI HONG ; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D. | ECS Transactions | | | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOS | MINGHWEI HONG ; Kwo, J.; Lin, T.D.; Huang, M.L. | MRS Bulletin | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; MINGHWEI HONG | ECS Transactions | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S. | 2007 International Semiconductor Device Research Symposium | | | |
2011 | Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. | Journal of Crystal Growth | 2 | 2 | |
2011 | MBE - Enabling technology beyond Si CMOS | Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MBE grown high-quality Gd<inf>2</inf>O<inf>3</inf>/Si(1 1 1) hetero-structure | Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100) | Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; MINGHWEI HONG ; Kwo, J. | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2008 | Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 21 | 21 | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | | | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | MINGHWEI HONG ; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J. | Applied Physics Letters | | | |
2009 | Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics | Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications | | | |
2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Solid-State Electronics | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectrics | Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Device Research Conference | 14 | 0 | |
2010 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; MINGHWEI HONG ; Kwo, J. | Solid-State Electronics | | | |