公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG | Applied Physics Letters | 27 | 25 | |
2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |
2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 14 | 13 | |
2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 15 | 15 | |
2009 | High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layers | Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 0 | 0 | |
2014 | High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M. | ECS Transactions | 1 | 0 | |
2014 | High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2008 | High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Tsai, W.; Wang, Y.C. | Applied Physics Letters | 142 | 123 | |
2013 | High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf> | Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 48 | |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
2006 | III-V MOSFET's with advanced high 庥 dielectrics | Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG | ECS Transactions | 0 | 0 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2009 | InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOS | Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG | MRS Bulletin | 34 | 33 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2011 | Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. | Journal of Crystal Growth | 2 | 2 | |
2011 | MBE - Enabling technology beyond Si CMOS | Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 6 | 6 | |
2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 46 | 45 | |
2007 | MBE grown high-quality Gd<inf>2</inf>O<inf>3</inf>/Si(1 1 1) hetero-structure | Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 17 | |