公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1994 | Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 6 | |
1991 | Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments | Chang-Liao, K.-S.; JENN-GWO HWU | Solid State Electronics | 10 | 0 | |
1990 | Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Electron Device Letters | 11 | 13 | |
1990 | Improvement of oxide leakage currents in mos structures by postirradiation annealing | Lin, J.-J.; JENN-GWO HWU | Japanese Journal of Applied Physics | 0 | 2 | |
2002 | Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing | Hong, C.-C.; Chen, J.-L.; JENN-GWO HWU | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | 1 | 2 | |
1991 | Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments | Chang-Liao, K. S.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
1985 | Impurity-related interface trap in an Al/SiO2/Si(P) capacitor | JENN-GWO HWU | Thin Solid Films | 3 | 3 | |
2005 | Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method | JENN-GWO HWU | ECS Transactions | 1 | 0 | |
2015 | Influence of etching-induced surface damage on device performance with consideration of minority carriers within diffusion length from depletion edge | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
2017 | Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Journal of Applied Physics | 5 | 4 | |
2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |
2013 | Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2015 | Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion | JENN-GWO HWU | International Journal of Nanotechnology | 4 | 4 | |
2012 | Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure | JENN-GWO HWU | Applied Physics Letters | 8 | 7 | |
2017 | Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination | JENN-GWO HWU | Applied Physics A | 0 | 0 | |
2012 | Investigation of nonuniformity phenomenon in nanoscale SiO 2 and high-k gate dielectrics | JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
2011 | Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 2 | 3 | |
2014 | Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes | Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |