公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy | Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 12 | |
2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 14 | 13 | |
2008 | Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111) | Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 7 | 7 | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 13 | 14 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 8 | 10 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 0 | 2 | |
2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS | Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 11 | 11 | |
1998 | Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs | Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Chao, S.-C.; Wu, K.-H.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | IEEE Journal of Quantum Electronics | 21 | 24 | |
2011 | MBE - Enabling technology beyond Si CMOS | Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 6 | 6 | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2015 | Measuring full-field deformation and vibration using digital image correlation | Chang, C.Y.; Chen, L.C.; Lee, W.C.; CHIEN-CHING MA ; LIANG-CHIA CHEN | 2015 IFToMM World Congress Proceedings | 1 | 0 | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100) | Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 0 | 0 | |
2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 21 | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 18 | |