公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Density and grain size of the IrO<inf>x</inf> metal nanocrystals in n-Si/SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/IrO<inf>x</inf>/Al <inf>2</inf>O<inf>3</inf> memory capacitors | Li, W.C.; Banerjee, W.; Maikap, S.; Yang, J.R.; JER-REN YANG | ECS Transactions | | | |
2016 | Detection of pH and Enzyme-Free H<inf>2</inf>O<inf>2</inf> Sensing Mechanism by Using GdO<inf>x</inf> Membrane in Electrolyte-Insulator-Semiconductor Structure | Kumar, P.; Maikap, S.; Qiu, J.-T.; Jana, S.; Roy, A.; Singh, K.; Cheng, H.-M.; Chang, M.-T.; Mahapatra, R.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Nanoscale Research Letters | | | |
2014 | Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrO<inf>x</inf>/GdO<inf>x</inf>/W cross-point memories | Jana, D.; Maikap, S.; Prakash, A.; Chen, Y.-Y.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Nanoscale Research Letters | | | |
2004 | Evidence of Si/SiGe heterojunction roughness scattering | Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; LiuCW | Applied Physics Letters | | | |
2004 | Evidence of SiSiGe heterojunction roughness scattering | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | | | |
2018 | Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structure | Chakrabarti, S.; Panja, R.; Roy, S.; Roy, A.; Samanta, S.; Dutta, M.; Ginnaram, S.; Maikap, S.; Cheng, H.-M.; Tsai, L.-N.; Chang, Y.-L.; Mahapatra, R.; Jana, D.; Qiu, J.-T.; Yang, J.-R.; JER-REN YANG | Applied Surface Science | | | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | |
2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2007 | HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. | Japanese Journal of Applied | | | |
2007 | HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
2007 | High-�e HfO<inf>2</inf>/TiO<inf>2</inf>/HfO<inf>2</inf> multilayer quantum well flash memory devices | Maikap, S.; Tzeng, P.J.; Tseng, S.S.; Wang, T.-Y.; Lin, C.H.; Lee, H.Y.; Wang, C.C.; Tien, T.C.; Lee, L.S.; Li, P.W.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2016 | Highly reliable label-free detection of urea/glucose and sensing mechanism using SiO<inf>2</inf> and CdSe-ZnS nanoparticles in electrolyte-insulator-semiconductor structure | Kumar, P.; Maikap, S.; Singh, K.; Chatterjee, S.; Chen, Y.-Y.; Cheng, H.-M.; Mahapatra, R.; Qiu, J.-T.; Yang, J.-R.; JER-REN YANG | Journal of the Electrochemical Society | | | |
2008 | Highly thermally stable and reproducible of ALD RuO<inf>2</inf> nanocrystal floating gate memory devices with large memory window and good retention | Maikap, S.; Banerjee, W.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Kao, M.-J.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2006 | Hole confinement at Si/SiGe heterojunction
of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | CHEE-WEE LIU ; Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2007 | Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si | Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. | Applied Physics Letters | | | |
2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2014 | Impact of AlO<inf>x</inf> interfacial layer and switching mechanism in W/AlO<inf>x</inf>/TaO<inf>x</inf>/TiN RRAMs | Chakrabarti, S.; Jana, D.; Dutta, M.; Maikap, S.; Chen, Y.-Y.; Yang, J.-R.; JER-REN YANG | 2014 IEEE 6th International Memory Workshop, IMW 2014 | | | |
2015 | Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO<inf>x</inf>/TaO<inf>x</inf>/TiN structure | Roy, S.; Maikap, S.; Sreekanth, G.; Dutta, M.; Jana, D.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Journal of Alloys and Compounds | | | |