Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2003 | Advances in high 庥 gate dielectrics for Si and III-V semiconductors | Kwo, J.; MINGHWEI HONG ; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T. | Journal of Crystal Growth | | | |
2000 | Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; MINGHWEI HONG ; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M. | Applied Physics Letters | | | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2005 | High-quality nanothickness single-crystal [formula omitted] film grown on Si(111) | Hong, M.; Kortan, A.R.; Chang, P.; Huang, Y.L.; Chen, C.P.; Chou, H.Y.; Lee, H.Y.; Kwo, J.; Chu, M.-W. ; Chen, C.H.; Goncharova, L.V.; Garfunkel, E.; Gustafsson, T. | Applied Physics Letters | 2 | 16 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L. | Applied Physics Letters | | | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y. | Applied Physics Letters | | | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Applied Physics Letters | | | |
2001 | New phase formation of Gd<inf>2</inf>O<inf>3</inf>films on GaAs(100) | Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; MINGHWEI HONG ; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M. | Journal of Applied Physics | | | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | MINGHWEI HONG ; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2000 | Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100) | Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P. | Physical Review B - Condensed Matter and Materials Physics | | | |
2000 | Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substrates | Bolliger, B.; Erbudak, M.; MINGHWEI HONG ; Kwo, J.; Kortan, A.R.; Mannaerts, J.P. | Surface and Interface Analysis | | | |
2002 | Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces | Flückiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; MINGHWEI HONG ; Kortan, A.R. | Surface and Interface Analysis | | | |
2006 | Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001) | Kortan, A.R.; Kopylov, N.; Kwo, J.; MINGHWEI HONG ; Chen, C.P.; Mannaerts, J.P.; Liou, S.H. | Applied Physics Letters | | | |