公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | | | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Applied Physics Letters | | | |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; MINGHWEI HONG | Advanced Materials | | | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; MINGHWEI HONG ; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C. | Applied Physics Letters | | | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Solid-State Electronics | | | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; MINGHWEI HONG ; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J. | Applied Physics Letters | | | |
2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; MINGHWEI HONG ; Chiu, Y.N.; Kwo, J.; Wang, Y.H. | Applied Physics Letters | | | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; MINGHWEI HONG ; Kwo, J.; Lee, H.Y.; Lay, T.S. | Journal of Applied Physics | | | |
2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2010 | Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001) | Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Crystal Growth and Design | | | |
2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J.; Huang, C.M.; Lee, H.Y. | Applied Physics Letters | | | |
2009 | Surface exciton polariton in monoclinic HfO2: An electron energy-loss spectroscopy study | Liou, S.C.; Chu, M.-W. ; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | New Journal of Physics | 11 | 11 | |
2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf> | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer | Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Crystal Growth and Design | | | |
2005 | Thermodynamic stability of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) GaAs interface | Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Transmission electron microscopy characterization of HfO <inf>2</inf>/GaAs(001) heterostructures grown by molecular beam epitaxy | Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; MINGHWEI HONG ; Kwo J. | Applied Physics A: Materials Science and Processing | 9 | 8 | |
2008 | Volume shrinkages and mechanical properties of various fiber-reinforced hydroxyethyl methacrylate–polyurethane/unsaturated polyester composites | Lin, S.P.; Shen, J.H.; Han, J.L.; Lee, Y.J.; Liao, K.H.; Yeh, J.T.; Chang, F.C.; Hsieh, K.H. | Composites Science and Technology | | | |