公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1991 | Radiation Reliability of Devices Used in Optical Fiber Communication | Hwu, Jenn-Gwo | | | | |
1994 | Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides | 胡振國 ; Jeng, M. J.; Lin, H. S. | | 1 | 1 | |
1996 | Rapid thermal post-metallization annealing effect on thin gate oxides | Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU | Applied Surface Science | 4 | 3 | |
1995 | Rapid thermal post-metallization annealing in thin gate oxides | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 1 | 1 | |
1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
2017 | Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
2002 | Reduction in Leakage Current of Low-Temperature
Thin-Gate Oxide by Repeated Spike
Oxidation Technique | Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | | |
2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
1994 | Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 2: Letters | 1 | 1 | |
1986 | Relationship between mobile charges and interface trap states in silicon mos capacitors | Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
2007 | Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation technique | JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 9 | 9 | |
1989 | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | 胡振國 ; Lin, J. J.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of Electronic Devices and Materials Symposium | | | |
1996 | Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process | Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 11 | 9 | |
2016 | Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode | JENN-GWO HWU | IEEE Transactions on Electron Devices | 12 | 11 | |
1988 | Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors | Hwu, J.-G. ; Lee, G. S.; Lee, Si-Chen ; Wang, Way-Seen | IEEE Transactions on Nuclear Science | 11 | 10 | |
1990 | Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique | JENN-GWO HWU | Journal of Physics and Chemistry of Solids | 0 | 0 | |
2016 | Role of Fringing Field on The Electrical Characteristics of Metal-Oxide- Semiconductor Capacitors with Co-Planar and Edge-Removed Oxides | C.F,Yang; JENN-GWO HWU | AIP Advances | 10 | 8 | |
2014 | Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 14 | 13 | |
2021 | Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodes | Chen K.-C; Lin K.-W; JENN-GWO HWU | IEEE Access | 2 | 2 | |
1992 | Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices | Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 13 | 12 | |