公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2023 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
1990 | A Study of the Leakage Property of Thin Gate Oxides | Hwu, Jenn-Gwo | | | | |
1989 | A Study of the Radiation Effect on Tantalum Oxide Films | Hwu, Jenn-Gwo | | | | |
2004 | Suboxide characteristics in ultrathin oxides grown under novel oxidation processes | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 5 | 5 | |
2015 | Subthreshold swing reduction by double exponential control mechanism in an MOS gated-MIS tunnel transistor | JENN-GWO HWU | IEEE Transactions on Electron Devices | 28 | 26 | |
2016 | Surface Non-Uniformity Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor | H.H.Lin; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 3 | |
2016 | Surface Nonuniformity-Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor | JENN-GWO HWU | IEEE Transactions on Electron Devices | 3 | 3 | |
2016 | Systems and Methods for Forming Nanowires Using Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Po-Hao Tseng; JENN-GWO HWU | | | | |
2016 | Systems and Methods for Forming Nanowires Using Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Po-Hao Tseng; JENN-GWO HWU | | | | |
2005 | Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure | JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
1999 | The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides | Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 12 | 10 | |
2005 | The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection | JENN-GWO HWU | Solid-State Electronics | 1 | 0 | |
1986 | The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors | Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU | International Journal of Electronics | 1 | 1 | |
1988 | The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient | Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 8 | 8 | |
2003 | Thermal stress at wafer contact points in rapid thermal processing investigated by repeated spike treatment before oxidation | JENN-GWO HWU | Journal of Applied Physics | 2 | 2 | |
2003 | Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current | JENN-GWO HWU | Applied Physics Letters | 7 | 7 | |
2009 | Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 4 | 2 | |
1996 | Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification | Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 25 | 23 | |
1990 | Thin-oxide thickness measurement in ellipsometry by a wafer rotation method | JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
2023 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO<inf>2</inf>for One-Time Programmable Application | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |