Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Microelectronic Engineering | | | |
2006 | Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection | Peng, P.C.; Kuo, H.C.; Tsai, W.K.; Chang, Y.H.; Lin, C.T.; Chi, S.; Wang, S.C.; Lin, G.; Yang, H.P.; Lin, K.F.; Yu, H.C.; Chi, J.Y.; GONG-RU LIN | Optics Express | | | |
2006 | Dynamic characteristics of quantum dot VCSEL with external light injection | Peng, P.C.; Kuo, H.C.; Tsai, W.K.; Chang, Y.H.; Lin, C.T.; Chi, S.; Wang, S.C.; Lin, G.; Yang, H.P.; Lin, K.F.; Yu, H.C.; GONG-RU LIN | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 | 0 | 0 | |
2001 | Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction | Hang, D.R.; CHI-TE LIANG ; Huang, C.F.; Chang, Y.H.; YUAN-HUEI CHANG ; Jiang, H.X.; Lin, J.Y. | Applied Physics Letters | 38 | 36 | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | MINGHWEI HONG ; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J. | Journal of Crystal Growth | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
1997 | Fabrication of ZnSe quantum dots under Volmer-Weber mode by metalorganic chemical vapor deposition | Harris Liao, M.C.; Chang, Y.H.; YANG-FANG CHEN ; Hsu, J.W.; Lin, J.M.; Chou, W.C. | Applied Physics Letters | | | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; SSU-YEN HUANG ; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J. | Journal of Applied Physics | | | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; SSU-YEN HUANG ; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J. | Journal of Applied Physics | | | |
2013 | Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; MINGHWEI HONG ; Kwo, J. | Journal of Applied Physics | | | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth | Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; MINGHWEI HONG | Journal of Crystal Growth | | | |
1995 | Gradient-index polymer fibers prepared by extrusion | Ho, B. C.; Chen, J. H.; WEN-CHANG CHEN ; Chang, Y.H.; Yang, S. Y.; Chen, J. J.; Tseng, T. W. | Polymer Journal | | | |
2008 | Growth and characterization of CdSe nanoneedles and other one-dimensional CdSe nanostructures | Cheng, J.H.; Chao, H.Y.; Chang, Y.H.; Hsu, C.H.; Cheng, C.L.; Chen, T.T.; Chen, Y.F.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Physica E: Low-Dimensional Systems and Nanostructures | 16 | 13 | |
2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
2013 | High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf> | Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; MINGHWEI HONG ; Kwo, J. | Microelectronic Engineering | | | |
2013 | Infrared brazing Ti<inf>50</inf>Ni<inf>50</inf> and invar using Ag-based filler foils | REN-KAE SHIUE ; Chang, Y.H.; SHYI-KAAN WU | Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science | 6 | 6 | |