公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 0 | 2 | |
2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS | Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 11 | 11 | |
1998 | Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs | Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Chao, S.-C.; Wu, K.-H.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | IEEE Journal of Quantum Electronics | 21 | 24 | |
2011 | MBE - Enabling technology beyond Si CMOS | Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 6 | 6 | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2015 | Measuring full-field deformation and vibration using digital image correlation | Chang, C.Y.; Chen, L.C.; Lee, W.C.; CHIEN-CHING MA ; LIANG-CHIA CHEN | 2015 IFToMM World Congress Proceedings | 1 | 0 | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100) | Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 0 | 0 | |
2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 21 | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 18 | |
2007 | Multi-criteria Fuzzy Optimization for Locating Warehouses and Distribution Centers in A Supply Chain Network | CHEN CHENG-LIANG ; Yuan, T.W.; Lee, W.C. | Journal of the Chinese Institute of Chemical Engineers | 45 | 42 | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
1997 | Near-bandgap ultrafast optical responses of furnaceannealed aresonic-ion-implanted GaAs | Lin, G.-R.; Pan, C.-L.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | Lasers and Electro-Optics Society Annual Meeting-LEOS | | | |
2006 | Non-audit Service and Auditor Independence: An Examination of the Procomp Effect | Duh, Rong-Ruey ; Lee, W.C.; Hua, C. Y. | 14th Annual Conference on Pacific Basin Finance, Economics and Accounting | | | |
2002 | Notch tensile properties of laser-surface-annealed 17-4 PH stainless steel in hydrogen-related environments | Tsay, L.W.; Lee, W.C.; Shiue, R.K.; Wu, J.K.; REN-KAE SHIUE | Corrosion Science | | | |
1998 | Observation of coulomb staircases in arsenic precipitates in low-temperature grown GaAs | JEN-CHEN FAN ; Yong, B.L.; Yang, Y.C.; Chen, Y.F.; Lee, W.C.; Hsu, T.M. | Physica Status Solidi (A) Applied Research | | | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 12 | 13 | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 8 | |