Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2017 | Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001) | Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2019 | Fundamental Understanding of Oxide Defects in HfO<inf>2</inf> and Y<inf>2</inf>O<inf>3</inf> on GaAs(001) with High Thermal Stability | Wan, H.W.; Hong, Y.J.; Young, L.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | IEEE International Reliability Physics Symposium Proceedings | 0 | 0 | |
2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
2018 | Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited) | Hong, M.; Lin, Y.H.; Wan, H.W.; Chen, W.S.; Cheng, Y.T.; Cheng, C.P.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings | 0 | 0 | |
2019 | Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum | Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 16 | 16 | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 14 | 15 | |
2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2017 | Ultra-high thermal stability and extremely low D<inf>it</inf> on HfO<inf>2</inf>/p-GaAs(001) interface | Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 9 | 9 | |