公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | MINGHWEI HONG ; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J. | Journal of Crystal Growth | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; MINGHWEI HONG | Microelectronic Engineering | | | |
2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
2014 | High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M. | ECS Transactions | 1 | 0 | |
2014 | High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | ECS Transactions | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; MINGHWEI HONG ; Kwo, J. | Microelectronic Engineering | | | |
2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures | Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Nanotechnology | | | |
2017 | Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition | Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission study | Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | | | |
2018 | Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited) | MINGHWEI HONG ; Lin, Y.H.; Wan, H.W.; Chen, W.S.; Cheng, Y.T.; Cheng, C.P.; Pi, T.W.; Kwo, J. | 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings | | | |
2019 | Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum | Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | MINGHWEI HONG ; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J. | Applied Physics Letters | | | |
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As(001)-4 ? 2 from atomic layer deposition | Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |