公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation | Chuang, K.-C.; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
2001 | Improvement in oxide thickness uniformity by repeated spike oxidation | Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 4 | 4 | |
1994 | Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2O | JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | | | | |
1994 | Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealings | Wu, Y.-L.; Kuo, K.-M.; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | | | |
1989 | Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments | Fu, S.-L.; JENN-GWO HWU | Solid State Electronics | 18 | 22 | |
1993 | Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
1993 | Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal | JENN-GWO HWU | IEEE Electron Device Letters | 12 | 11 | |
1997 | Improvement in radiation-hard CMOS logic gates for noise margin | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |
1995 | Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides | 胡振國 ; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo | | | | |
1995 | Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides | JENN-GWO HWU | Solid State Electronics | 2 | 4 | |
1992 | Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing | 胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
2014 | Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale Research Letters | 7 | 8 | |
1999 | Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA) | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 3 | 3 | |
1990 | Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments | Hwu, Jenn-Gwo | | | | |
2002 | Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow | Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
2013 | Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2 | Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 11 | 10 | |
1990 | Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments | 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo | | | | |
1994 | Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 6 | |