公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; MINGHWEI HONG ; Lin, C.A.; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Cui, S.; Ma, T.P. | Applied Physics Letters | | | |
2009 | GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy | Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2008 | Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111) | Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; MINGHWEI HONG ; Ng, H.M.; Kwo, J.; Hsu, C.H. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2009 | High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical properties | Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; MINGHWEI HONG | Journal of Crystal Growth | 49 | 50 | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
1994 | A hydraulic absorber for wideband vibration reduction in ship hulls | Hsueh, W.J.; Lee, Y.J.; WEN-JENG HSUEH | Journal of Offshore Mechanics and Arctic Engineering | | | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S. | 2007 International Semiconductor Device Research Symposium | | | |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | | | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Applied Physics Letters | | | |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; MINGHWEI HONG | Advanced Materials | | | |