公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1995 | Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides | JENN-GWO HWU | Solid State Electronics | 2 | 4 | |
1992 | Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing | 胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
2014 | Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale Research Letters | 7 | 8 | |
1999 | Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA) | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 3 | 3 | |
1990 | Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments | Hwu, Jenn-Gwo | | | | |
2002 | Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow | Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
2013 | Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2 | Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 11 | 10 | |
1990 | Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments | 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo | | | | |
1994 | Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 6 | |
1991 | Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments | Chang-Liao, K.-S.; JENN-GWO HWU | Solid State Electronics | 10 | 0 | |
1990 | Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Electron Device Letters | 11 | 13 | |
1990 | Improvement of oxide leakage currents in mos structures by postirradiation annealing | Lin, J.-J.; JENN-GWO HWU | Japanese Journal of Applied Physics | 0 | 2 | |
2002 | Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing | Hong, C.-C.; Chen, J.-L.; JENN-GWO HWU | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | 1 | 2 | |
1991 | Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments | Chang-Liao, K. S.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
1985 | Impurity-related interface trap in an Al/SiO2/Si(P) capacitor | JENN-GWO HWU | Thin Solid Films | 3 | 3 | |
2005 | Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method | JENN-GWO HWU | ECS Transactions | 1 | 0 | |
2015 | Influence of etching-induced surface damage on device performance with consideration of minority carriers within diffusion length from depletion edge | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
2017 | Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Journal of Applied Physics | 5 | 4 | |
2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |