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J. B. Kuo
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公開日期
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作者
來源出版物
scopus
WOS
全文
2004
A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects
E. C. Sun; J. B. Kuo; JAMES-B KUO
IEEE Transactions on Electron Devices
41
35
2016
A Continuous Compact Model Incorporating Higher-Order Correction for Junctionless Nanowire Tansistors with Arbitrary Doping Profiles
C Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO
IEEE Transactions on Nanotechnology
5
0
A High-Speed 1.5V Clocked BiCMOS Latch for BiCMOS Dynamic Pipelined Digital Logic VLSI Systems
J. B. Kuo; J. H. Lou; JAMES-B KUO
2004
A Low-Voltage CMOS Load Driver with the Adiabatic and Bootstrap Techniques for Low-Power System Applications
J. B. Kuo; H. P. Chen; JAMES-B KUO
MWSCAS
4
0
1999
A Low-Voltage Semi-Dynamic DCVSPG-Domino Logic Circuit
J. H. Lou; J. B. Kuo; JAMES-B KUO
Low-Voltage CMOS VLSI Circuits
2016
A Nonlinear Surface-Field Compact Model for Juinctionless Nanowire MOSFET
C. Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO
Workshop on Microelectronics and Electron Devices (WMED)
1999
A Novel 0.7V Two-Port 6T SRAM Memory Cell Structure with Single-Bit-Line Simultaneous Read-and-Write Access (SBLSRWA) Capability using Partially Depleted SOI Dynamic-Threshold Technique
S. C. Liu; J. B. Kuo; JAMES-B KUO
IEEE International SOI Conference Proceedings
0
0
2003
A Novel 0.8V BP-DTMOS Content Addressable Memory Cell Circuit Derived from SOI-DTMOS Techniques
E. Shen; J. B. Kuo; JAMES-B KUO
IEEE Conference on Electron Devices and Solid State Circuits
4
0
0
A Novel Low-Voltage Silicon-On-Insulator (SOI) CMOS Complementary Pass-Transistor Logic (CPL) Circuit using Asymmetrical Dynamic Threshold Pass-Transistor (ADTPT) Technique
J. B. Kuo; B. T. Wang; JAMES-B KUO
2014
A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
Q. Cheng; C. Y. Hong; J. B. Kuo; Y. J. Chen; JAMES-B KUO
IEEE Transactions on Electron Devices
16
17
2006
Analysis of Fringing Electric Field Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation
C. C. Chen; J. B. Kuo; K. W. Su; S. Liu; JAMES-B KUO
ICSICT
0
0
2003
Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect
J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO
IEEE Electron Devices for Microwave and Optoelectronic Applications
0
0
2006
Analysis of the gate-source/drain capacitance behavior of a narrow-channel FD SOINMOS device considering the 3-D fringing capacitances using 3-D simulation
C. C. Chen; J. B. Kuo; K. W. Su,; S. Liu; JAMES-B KUO
IEEE Transactions on Electron Devices
3
2
2011
Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect
C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
International Electron Device Material Symposium
2013
Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary
L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
IEEE Transactions on Electron Devices
0
0
2003
Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect
M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
Electron Devices and Material Symposium
2013
Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT
D. H. Lung; J. B. Kuo; JAMES-B KUO
International Conference on EECS
2014
Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
IEDMS
2011
Cell-based leakage power reduction priority (CBLPRP) optimization methodology for designing SOC applications using MTCMOS technique
S. F. Huang; R. S. Shen; J. B. Kuo; JAMES-B KUO
Power and Timing Modeling Optimization Symposium
2
0
2005
CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects
Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
HKEDSSC
0
0