公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a dielectric insulator for GaAs device applications | Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
1999 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETs | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Electronics Letters | 18 | 18 | |
1998 | GaAs MOSFET using MBE-grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate oxide | Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | IEE Proceedings: Circuits, Devices and Systems | 5 | 5 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | IEEE Electron Device Letters | 225 | | |
2004 | GaAs-based metal-oxide semiconductor field-effect transistors with Al <inf>2</inf> O <inf>3</inf> gate dielectrics grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | Journal of Electronic Materials | 17 | | |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Applied Physics Letters | 268 | 248 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | 2002 12th International Conference on Molecular Beam Epitaxy | 1 | 0 | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 83 | 81 | |
1998 | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG | IEEE Journal of Quantum Electronics | 2 | 2 | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2001 | New phase formation of Gd<inf>2</inf>O<inf>3</inf>films on GaAs(100) | Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 10 | 10 | |
1997 | Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfaces | Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG | Journal of Crystal Growth | 73 | 68 | |
1996 | Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 2 | 2 | |
1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG | Applied Physics Letters | 79 | 80 | |
2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 11 | 11 | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |