第 1 到 172 筆結果,共 172 筆。

公開日期標題作者來源出版物scopusWOS全文
12024Analysis of two-terminal perovskite/silicon tandem solar cells with differing texture structure, perovskite carrier lifetime, and tunneling junction qualityHsieh, Chun Hao; Huang, Jun Yu; YUH-RENN WU Journal of Applied Physics
22024Graphene-All-Around Cobalt Interconnect with a Back-End-of-Line Compatible ProcessKuo, Chi Yuan; Zhu, Jia Heng; Chiu, Yun Ping; Ni, I. Chih; Chen, Mei Hsin; YUH-RENN WU ; CHIH-I WU Nano Letters
32023Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopyTak, Tanay; Johnson, Cameron W.; Ho, Wan Ying; Wu, Feng; Sauty, Mylène; Rebollo, Steve; Schmid, Andreas K.; Peretti, Jacques; YUH-RENN WU ; Weisbuch, Claude; Speck, James S.Physical Review Applied
42023The micro-LED roadmap: status quo and prospectsCHIEN-CHUNG LIN ; YUH-RENN WU ; Kuo, Hao Chung; Wong, Matthew S.; DenBaars, Steven P.; Nakamura, Shuji; Pandey, Ayush; Mi, Zetian; Tian, Pengfei; Ohkawa, Kazuhiro; Iida, Daisuke; Wang, Tao; Cai, Yuefei; Bai, Jie; Yang, Zhiyong; Qian, Yizhou; Wu, Shin Tson; Han, Jung; Chen, Chen; Liu, Zhaojun; Hyun, Byung Ryool; Kim, Jae Hyun; Jang, Bongkyun; Kim, Hyeon Don; Lee, Hak Joo; Liu, Ying Tsang; Lai, Yu Hung; Li, Yun Li; Meng, Wanqing; Shen, Haoliang; Liu, Bin; Wang, Xinran; Liang, Kai Ling; Luo, Cheng Jhih; Fang, Yen HsiangJPhys Photonics10
52023Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equationTsai, Tsung Yin; Qwah, Kai Shek; Banon, Jean Philippe; Filoche, Marcel; Weisbuch, Claude; YUH-RENN WU ; Speck, James S.Physical Review Applied0
62023Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulationsChen, Ying Chuan; Chao, Yu Ting; Chen, Edward; CHAO-HSIN WU ; YUH-RENN WU Physical Review Materials00
72023Origins of the high-energy electroluminescence peaks in long-wavelength (∼495-685 nm) InGaN light-emitting diodesChow, Yi Chao; Tak, Tanay; Wu, Feng; Ewing, Jacob; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU ; Weisbuch, Claude; Speck, James S.Applied Physics Letters2
82023Micromagnetic simulations for deterministic switching in SOT-MRAM cell with additional heavy metal capping stripKuan-hao Chiao; YUH-RENN WU Applied Physics Letters00
92023Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMTShen, Yao-Luen; Chang, Chih-Yao; Chen, Po-Liang; Tai, Cheng-Chan; Wu, Tian-Li; YUH-RENN WU ; Huang, Chih-FangMicromachines00
102023Efficient and Bright Organic Radical Light-Emitting Diodes with Low Efficiency Roll-OffCho, Hwan Hee; Gorgon, Sebastian; Hung, Hsiao Chun; Huang, Jun Yu; YUH-RENN WU ; Li, Feng; Greenham, Neil C.; Evans, Emrys W.; Friend, Richard H.Advanced Materials10
112023A Kinetic Monte Carlo Simulation Study of WS<inf>2</inf>RRAM with Different 2D Layer ThicknessChen, Ying Chuan; Chao, Yu Ting; Chen, Edward; CHAO-HSIN WU ; YUH-RENN WU 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings00
122023GaN on Si RF performance with different AlGaN back barrierHsieh, Chang Yan; Chen, Hui Yu; Tu, Po Tsung; Chen, Jui Chin; Yang, Hsin Yun; Yeh, Po Chun; Hsieh, De; Liu, Hsueh Hsing; Fu, Yi Keng; Sheu, Shyh Shyuan; Kuo, Hao Chung; YUH-RENN WU ; Lo, Wei Chung; Chang, Shih Chieh2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings00
132023Optimization of Optical and Electrical Properties of 2T Textured Perovskite/Silicon Tandem Solar Cell StructureHsieh, Chun Hao; Huang, Jun Yu; YUH-RENN WU Conference Record of the IEEE Photovoltaic Specialists Conference
142023Numerical Analysis and Optimization of a Hybrid Layer Structure for Triplet-Triplet Fusion Mechanism in Organic Light-Emitting DiodesHuang, JY; Hung, HC; Hsu, KC; Chen, CH; Lee, PH; Lin, Hung-Yi; Lin, BY; Leung, MK ; Chiu, TL; Lee, Jiun-Haw; Friend, RH; Wu, YR ADVANCED THEORY AND SIMULATIONS00
152022Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriersCho, Changsoon; Feldmann, Sascha; Yeom, Kyung Mun; Jang, Yeoun Woo; Kahmann, Simon; Huang, Jun Yu; Yang, Terry Chien‐Jen; Khayyat, Mohammed Nabaz Taher; YUH-RENN WU ; Choi, Mansoo; Noh, Jun Hong; Stranks, Samuel D.; Greenham, Neil C.Nature Materials1510
162022Influences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analysesHuang, Jun Yu; Yang, You Wei; Hsu, Wei Hsuan; Chang, En Wen; Chen, Mei Hsin; YUH-RENN WU Scientific Reports108
172022Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p-n JunctionsLv, Yanhui; Wu, Che Yu; Zhao, Yue; Wu, Gang; Abid, Mohamed; Cho, Jiung; Choi, Miri; Ó Coileaín, Cormac; Hung, Kuan Ming; CHING-RAY CHANG ; YUH-RENN WU ; Wu, Han ChunACS Applied Electronic Materials33
182022Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer insertedChang, Chih Yao; Shen, Yao Luen; Tang, Shun Wei; Wu, Tian Li; Kuo, Wei Hung; Lin, Suh Fang; YUH-RENN WU ; Huang, Chih FangApplied Physics Express00
192022Analyzing the Bottleneck AlGaN-based UV-B Laser Diode With a 2D Electro-optical Numerical ModelCheng, Yun Hsiu; Lin, Yu Tai; YUH-RENN WU Conference Digest - IEEE International Semiconductor Laser Conference00
202022Design of AlInAs/GaAsSb/InGaAsSb Double Heterojunction Bipolar Transistors for The Unit Current Gain Cutoff Frequency of 850GHzLiu, Yun Hao; Liao, Yu Tzu; JIAN-JANG HUANG ; YUH-RENN WU 2022 Compound Semiconductor Week, CSW 202200
212022Development of time-dependent Exciton diffusion solver for modeling Triplet-Triplet Fusion Mechanism in OLEDsHuang, Jun Yu; Hung, Hsiao Chun; Hsu, Kung Chi; Chen, Chia Hsun; Lee, Pei Hsi; Lin, Hung Yi; Lin, Bo Yen; MAN-KIT LEUNG ; Chiu, Tien Lung; JIUN-HAW LEE ; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
222022Investigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulationsPai H.-C; YUH-RENN WU Journal of Applied Physics32
232022Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN templateCHIH-CHUNG YANG ; YUH-RENN WU Applied Physics Letters44
242022Study of Carrier Scattering and Mobility in Monolayer MoTe2and WTe2by First-Principle AnalysisPai H.-C; YUH-RENN WU 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 202210
252022Vertical hole transport through unipolar InGaN quantum wells and double heterostructuresQwah K.S; Monavarian M; Ho W.Y; YUH-RENN WU ; Speck J.S.Physical Review Materials20
262022Study of the Factors Limiting the Efficiency of Vertical-Type Nitride-and AlInGaP-Based Quantum-Well Micro-LEDsHo C.-H; Chen S.-M; YUH-RENN WU Processes22
272022Analysis of Light-Emission Polarization Ratio in Deep-Ultraviolet Light-Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p MethodShen H.-T; Chang Y.-C; Wu Y.-R.; YUH-RENN WU Physica Status Solidi - Rapid Research Letters33
282022Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum WellsHo C.-H; Speck J.S; Weisbuch C; Wu Y.-R.; YUH-RENN WU Physical Review Applied1211
292022Design of Monolayer MoS2Nanosheet Transistors for Low-Power ApplicationsChen P.-F; Chen E; Wu Y.-R.; YUH-RENN WU IEEE Transactions on Electron Devices11
302022Study on the effect of size on InGaN red micro-LEDsHorng R.-H; Ye C.-X; Chen P.-W; Iida D; Ohkawa K; Wu Y.-R; Wuu D.-S.; YUH-RENN WU Scientific Reports3228
312022Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum BarriersLynsky C; Lheureux G; Bonef B; Qwah K.S; White R.C; Denbaars S.P; Nakamura S; YUH-RENN WU ; Weisbuch C; Speck J.S.Physical Review Applied77
322022Electro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser DiodesChuang C.-M; Cheng Y.-H; Wu Y.-R.; YUH-RENN WU IEEE Journal of Selected Topics in Quantum Electronics00
332021Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive LayerWu W.-Y; Hsu Y.-H; Chen Y.-F; Wu Y.-R; Liu H.-W; Tu T.-Y; Chao P.P.-C; Tan C.-S; Horng R.-H.; YUH-RENN WU ACS Applied Electronic Materials66
342021Giant gauge factor of Van der Waals material based strain sensorsYUH-RENN WU Nature Communications61
352021Graphene/SnS2van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm DetectionZhao Y; Tsai T.-Y; Wu G; ? Coile?in C; Zhao Y.-F; Zhang D; Hung K.-M; Chang C.-R; Wu Y.-R; Wu H.-C.; YUH-RENN WU ACS Applied Materials and Interfaces1917
362021Influences of Random Alloy Fluctuation to the Efficiency of μlED and Optimization of Efficiency with Vertical Type ContactHo C.-H; Wu Y.-R.; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
372021Calculation of field dependent mobility in MoS2and WS2with multi-valley monte carlo methodChen P.-F; Wu Y.-R.; YUH-RENN WU VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings30
382021Disorder effects in nitride semiconductors: Impact on fundamental and device propertiesWeisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU Frontiers in Optics and Photonics10
392021Modeling dislocation-related reverse bias leakage in GaN p-n diodesQwah K.S; Robertson C.A; Wu Y.-R; Speck J.S.; YUH-RENN WU Semiconductor Science and Technology32
402021Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum WellsShen H.-T; Weisbuch C; Speck J.S; Wu Y.-R.; YUH-RENN WU Physical Review Applied1210
412021Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes with Cu/Invar/Cu Metal SubstratesSinha S; Tarntair F.-G; Ho C.-H; Wu Y.-R; Horng R.-H.; YUH-RENN WU IEEE Transactions on Electron Devices77
422021Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current CollapseYang J.-X; Lin D.-J; Wu Y.-R; YUH-RENN WU ; JIAN-JANG HUANG IEEE Journal of the Electron Devices Society33
432020Analysis of the hysteresis effect in Perovskite solar cells for the traditional and inverted architecturesChang E.-W; Huang J.-Y; Wu Y.-R.; YUH-RENN WU Conference Record of the IEEE Photovoltaic Specialists Conference10
442020Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transportMarcinkevi?ius, S.; Yapparov, R.; Kuritzky, L.Y.; Wu, Y.-R.; Nakamura, S.; Speck, J.S.; YUH-RENN WU Physical Review B46
452020Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor systemTsai, T.-Y.; Michalczewski, K.; Martyniuk, P.; Wu, C.-H.; YUH-RENN WU ; CHAO-HSIN WU Journal of Applied Physics1615
462020Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templatesHuang, C.-Y.; Walde, S.; Tsai, C.-L.; Netzel, C.; Liu, H.-H.; Hagedorn, S.; Wu, Y.-R.; Fu, Y.-K.; Weyers, M.; YUH-RENN WU Japanese Journal of Applied Physics1414
472020Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectorsChow, Y.C.; Lee, C.; Wong, M.S.; Wu, Y.-R.; Nakamura, S.; Denbaars, S.P.; Bowers, J.E.; Speck, J.S.; YUH-RENN WU Optics Express910
482020The 2020 UV emitter roadmapAmano, H.; Collazo, R.; De Santi, C.; Einfeldt, S.; Funato, M.; Glaab, J.; Hagedorn, S.; Hirano, A.; Hirayama, H.; Ishii, R.; Kashima, Y.; Kawakami, Y.; Kirste, R.; Kneissl, M.; Martin, R.; Mehnke, F.; Meneghini, M.; Ougazzaden, A.; Parbrook, P.J.; Rajan, S.; Reddy, P.; R?mer, F.; Ruschel, J.; Sarkar, B.; Scholz, F.; Schowalter, L.J.; Shields, P.; Sitar, Z.; Sulmoni, L.; Wang, T.; Wernicke, T.; Weyers, M.; Witzigmann, B.; Wu, Y.-R.; Wunderer, T.; Zhang, Y.; YUH-RENN WU Journal of Physics D: Applied Physics267239
492020Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodesLynsky, C.; Alhassan, A.I.; Lheureux, G.; Bonef, B.; Denbaars, S.P.; Nakamura, S.; Wu, Y.-R.; Weisbuch, C.; Speck, J.S.; YUH-RENN WU Physical Review Materials1815
502020Studies of 2D Bulk and Nanoribbon Band Structures in Mo<inf>x</inf>W<inf>1–x</inf>S<inf>2</inf> Alloy System Using Full sp<sup>3</sup>d<sup>5</sup> Tight-Binding ModelTsai, T.-Y.; Chen, P.-F.; Chang, S.-W.; Wu, Y.-R.; YUH-RENN WU Physica Status Solidi (B) Basic Research11
512020Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorderQwah, K.S.; Monavarian, M.; Lheureux, G.; Wang, J.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU Applied Physics Letters1212
522020Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical coolingMartyniuk, P.; Michalczewski, K.; Tsai, T.Y.; CHAO-HSIN WU ; YUH-RENN WU Optical and Quantum Electronics22
532020AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrierWang T.-Y; Lai W.-C; Sie S.-Y; Chang S.-P; Wu Y.-R; Chiou Y.-Z; Kuo C.-H; Sheu J.-K.; YUH-RENN WU Applied Physics Letters1415
542020Disorder effects in nitride semiconductors: Impact on fundamental and device propertiesWeisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU Nanophotonics2018
552020Analysis of the triplet exciton transfer mechanism at the heterojunctions of organic light-emitting diodesHuang, J.-Y.; Wang, M.-T.; Chen, G.-Y.; Li, J.-Y.; Chen, S.-P.; Lee, J.-H.; Chiu, T.-L.; Wu, Y.-R.; YUH-RENN WU ; JIUN-HAW LEE Journal of Physics D: Applied Physics54
562020A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodesLheureux G; Lynsky C; YUH-RENN WU ; Speck J.S; Weisbuch C.Journal of Applied Physics8
572020Characterization of semi-polar (20 2 ¯ 1) InGaN microLEDsHorng, R.-H.; Sinha, S.; Wu, Y.-R.; Tarntair, F.-G.; Han, J.; Wuu, D.-S.; YUH-RENN WU Scientific Reports76
582020Analysis and Optimization of GaN Based Multi-Channels FinFETsYu, C.-L.; Lin, C.-H.; Wu, Y.-R.; YUH-RENN WU IEEE Transactions on Nanotechnology76
592020Bistriazoles with a Biphenyl Core Derivative as an Electron-Favorable Bipolar Host of Efficient Blue Phosphorescent Organic Light-Emitting DiodesJIUN-HAW LEE ; Chen, C.-H.; Lin, B.-Y.; Lan, Y.-H.; Huang, Y.-M.; Chen, N.-J.; Huang, J.-J.; Volyniuk, D.; Keruckiene, R.; Grazulevicius, J.V.; YUH-RENN WU ; MAN-KIT LEUNG ; Chiu T.-L.ACS Applied Materials and Interfaces1010
602020Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solverHuang J.-Y; Lee J.-H; Wu Y.-R; Chen T.-Y; Chiu Y.-C; Huang J.-J; Leung M.-K; MAN-KIT LEUNG ; JIUN-HAW LEE ; YUH-RENN WU Physical Review Materials43
612020Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar CellsChang, C.-W.; Wadekar, P.V.; Huang, H.-C.; Chen, Q.Y.-S.; Wu, Y.-R.; Chen, R.T.; Tu, L.-W.; YUH-RENN WU Nanoscale Research Letters44
622019Optimization of MAPbI<inf>3</inf>-Based Perovskite Solar Cell with Textured SurfaceHuang, J.-Y.; Chang, E.-W.; Wu, Y.-R.; YUH-RENN WU IEEE Journal of Photovoltaics66
632019Modeling dislocation-related leakage currents in GaN p-n diodesRobertson, C.A.; Qwah, K.S.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU Journal of Applied Physics66
642019Investigation of Electronic Properties of Mo<inf>x</inf>W<inf>1-x</inf>S<inf>2</inf> Alloy by Tight-binding Method for Interband transitionTsai, T.-Y.; Chen, P.-F.; Chang, S.-W.; Wu, Y.-R.; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
652019Interwell carrier transport in InGaN/(In) GaN multiple quantum wellsSaulius Marcinkevi?ius; Rinat Yapparov; Leah Y Kuritzky; Yuh-Renn Wu; Shuji Nakamura; Steven P DenBaars; James S Speck; YUH-RENN WU Applied Physics Letters2018
662019Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machinesChen, C.-C.; Shiau, S.-Y.; Wu, M.-F.; Wu, Y.-R.; YUH-RENN WU Scientific Reports1813
6720193D Self-Consistent Quantum Transport Simulation for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Elastic and Inelastic Scattering EffectsHsiao, H.-W.; Wu, Y.-R.; YUH-RENN WU Physica Status Solidi (A) Applications and Materials Science44
682019Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical coolingMartyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU Opto-electronics Review11
692019Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical coolingMartyniuk, P.; Michalczewski, K.; Tsai, T.-Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
702019Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR DetectorMartyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.-H.; CHAO-HSIN WU ; YUH-RENN WU 2019 Compound Semiconductor Week, CSW 2019 - Proceedings00
712018Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical coolingMartyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
722018Optimization of MAPbI 3 perovskite solar cell with nano structuresHsieh Y.-C; Huang J.-Y; Wu Y.-R.; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
732018Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuationsHung-Hsiang Chen; James S Speck; Claude Weisbuch; Yuh-Renn Wu*; YUH-RENN WU Applied Physics Letters2626
742018Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopyW. Hahn; J-M Lentali; P Polovodov; N Young; S Nakamura; JS Speck; C Weisbuch; M Filoche; Y-R Wu; M Piccardo; F Maroun; L Martinelli; Y Lassailly; J Peretti; YUH-RENN WU Physical Review B2727
752018Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diodeWen-Yen Chang; Yang Kuo; Yu-Feng Yao; C. C. Yang; Yuh-Renn Wu; Yean-Woei Kiang; YUH-RENN WU ; CHIH-CHUNG YANG Optics Express109
762018Mode-Hopping Phenomena in the InGaN-Based Core�VShell Nanorod Array Collective LasingChia-Yen Huang; Tzu-Ying Tai; Jing-Jie Lin; Tsu-Chi Chang; Che-Yu Liu; Tien-Chang Lu; Yuh-Renn Wu; Hao-Chung Kuo; YUH-RENN WU ACS Photonics33
772017Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodesLi C.-K; Piccardo M; Lu L.-S; Mayboroda S; Martinelli L; Peretti J; Speck J.S; Weisbuch C; Filoche M; Wu Y.-R.; YUH-RENN WU Physical Review B9476
782017Transferring the Bendable Substrateless GaN LED Grown on Thin C-rich SiC Buffer Layer to Flexible Dielectric and Metallic PlatesChih-Hsien Cheng et al.; Tzu-Wei Huang; Chung-Lun Wu; Mu Ku Chen; Cheng Hung Chu; YUH-RENN WU ; Min-Hsiung Shih; Chao-Kuei Lee; Hao-Chung Kuo; Din-Ping Tsai; GONG-RU LIN Journal of Materials Chemistry C2726
792017Localization landscape theory of disorder in semiconductors I: Theory and modelingMarcel Filoche; Marco Piccardo; Yuh-Renn Wu; Chi-Kang Li; Claude Weisbuch; Svitlana Mayboroda; YUH-RENN WU Physical Review B7667
802017Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding MethodShuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU Physica Status Solidi B: Basic Solid State Physics
812017Electronic properties of MoS2 nanoribbon with strain using tight-binding methodChen S.-F; Wu Y.-R.; YUH-RENN WU Physica Status Solidi (B) Basic Research1111
822017Modeling of carrier transport and exciton diffusion in organic light emitting diodes with different doping effectsHuang J.-Y; Kung T.-J; Wu Y.-R.; YUH-RENN WU Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD00
832017Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double HeterostructureShin-Yi Ho; Chun-Hsun Lee; An-Jye Tzou; Hao-Chung Kuo; Yuh-Renn Wu; JianJang Huang; YUH-RENN WU IEEE Transactions on Electron Devices2322
842017Localization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes.Chi-Kang Li; Marco Piccardo; Li-Shuo Lu; Svitlana Mayboroda; Lucio Martinelli; Claude Weisbuch; Marcel Filoche; Yuh-Renn Wu; YUH-RENN WU Physical Review B
852017Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layersMarco Piccardo; Chi-Kang Li; Yuh-Renn Wu; James S. Speck; Bastien Bonef; Bob Farrell; Marcel Filoche; Lucio Martinelli; Jacques Peretti; Claude Weisbuch; YUH-RENN WU Physical Review B7166
862017Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulationTe-Jen Kung; Jun-Yu Huang; Jau-Jiun Huang; Snow H. Tseng; Man-Kit Leung; Tien-Lung Chiu; Jiun-Haw Lee; Yuh-Renn Wu*; YUH-RENN WU Optics Express66
872017A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbonsShuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU Applied Physics Letters1110
8820163D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pitsLi C.-K; Wu C.-K; Hsu C.-C; Lu L.-S; Li H; Lu T.-C; YUH-RENN WU AIP Advances3840
892016Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structureChao-Wei Wu; Yuh-Renn Wu; YUH-RENN WU AIP Advances1110
902015Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxyBrowne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU Journal of Applied Physics4738
912015High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrierPan, Chih-Chien; Yan, Qimin; Fu, Houqiang; Zhao, Yuji; Wu, Yuh-Renn; Van de Walle, Chris; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU Electronics Letters2119
922015Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility TransistorsLee, Finella; Su, Liang-Yu; Wang, Chih-Hao; Wu, Yuh-Renn; Huang, Jianjang; JIAN-JANG HUANG ; YUH-RENN WU IEEE Electron Device Letters10293
932015Percolation transport study in nitride based LED by considering the random alloy fluctuationWu, Chen-Kuo; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU Journal of Computational Electronics2621
942015The effect of tensile strain on optical anisotropy and exciton of m-plane ZnOWang H.H; Tian J.S; Chen C.Y; Huang H.H; Yeh Y.C; Deng P.Y; Chang L; Chu Y.H; YUH-RENN WU ; He J.H.IEEE Photonics Journal24
952014High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxyKyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU Journal of Applied Physics9390
962014Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystalsChou, Y.; Li, H.-W.; Yin, Y.-F.; Wang, Y.-T.; Lin, Y.-C.; Lin, D.-W.; Wu, Y.-R.; Kuo, H.-C.; YUH-RENN WU ; JIAN-JANG HUANG Journal of Applied Physics910
972014Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrodeLai, W. C.; Ma, M. H.; Lin, B. K.; Hsieh, B. H.; Wu, Y. R.; Sheu, J. K.; YUH-RENN WU Optics Express44
982014The optimization study of textured a-Si:H solar cellsLee, Chun-Yao; Yeh, Chun-Ming; Liu, Yung-Tsung; Fan, Chia-Ming; Huang, Chien-Fu; Wu, Yuh-Renn; YUH-RENN WU Journal of Renewable and Sustainable Energy1010
992014Study of random telegraph noise in UTBOX Silicon-on-Insulator nMOSFETsLi C.K; Fang W; Simoen E; Aoulaiche M; YUH-RENN WU ; Luo J; Zhao C; Claeys C.ECS Transactions40
1002014Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic CrystalsLi, Hsiang-Wei; Yin, Yu-Feng; Chang, Chen-Yu; Tsai, Chen-Hung; Hsu, Yen-Hsiang; Lin, Da-Wei; Wu, Yuh-Renn; Kuo, Hao-Chung; Huang, Jian Jang; YUH-RENN WU IEEE Journal of Quantum Electronics00
1012014Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devicesZhao, Yuji; Farrell, Robert M.; YUH-RENN WU ; Speck, James S.Japanese Journal of Applied Physics3831
1022014Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modelingHsiao H.-H.; Chang H.-C.; HUNG-CHUN CHANG ; YUH-RENN WU ; HUI-HSIN HSIAO Applied Physics Letters68
1032014The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behaviorYang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics128120
1042014Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDsLi, Chi-Kang; Rosmeulen, Maarten; Simoen, Eddy; Wu, Yuh-Renn; YUH-RENN WU IEEE Transactions on Electron Devices1923
1052014Thermoelectric characteristic of the rough InN/GaN core-shell nanowiresWu, Chao-Wei; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics1110
1062014Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wellsZhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU Applied Physics Express1516
1072014Thermal effects in a bendable InGaN/GaN quantum-well light-emitting diodeChen, H.-S.; Lin, C.-H.; Shih, P.-Y.; Hsieh, C.; Su, C.-Y.; Wu, Y.-R.; Kiang, Y.-W.; CHIH-CHUNG YANG ; YUH-RENN WU ; YEAN-WOEI KIANG IEEE Photonics Technology Letters22
1082014Efficiency dip observed with InGaN-based multiple quantum well solar cellsLai, K. Y.; Lin, G. J.; Wu, Yuh-Renn; Tsai, Meng-Lun; He, Jr-Hau; YUH-RENN WU Optics Express67
1092014Characteristics of large-scale nanohole arrays for thin-silicon photovoltaicsChen, Ting-Gang; Yu, Peichen; Chen, Shih-Wei; Chang, Feng-Yu; Huang, Bo-Yu; Cheng, Yu-Chih; Hsiao, Jui-Chung; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU Progress in Photovoltaics5951
1102013Scaling performance of Ga2O3/GaN nanowire field effect transistorLi, Chi-Kang; Yeh, Po-Chun; Yu, Jeng-Wei; LUNG-HAN PENG ; YUH-RENN WU Journal of Applied Physics109
1112013Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodesLi, Chi-Kang; Yang, Hung-Chih; Hsu, Ta-Cheng; Shen, Yu-Jiun; Liu, Ai-Sen; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics2826
1122013GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color IntensitiesChi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU IEEE Transactions on Electron Devices66
1132013Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar CellsWang, Hsun-Wen; Yu, Peichen; Wu, Yuh-Renn; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Shiuan-Huei; YUH-RENN WU IEEE Journal of Photovoltaics710
1142013Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diodeCHIH-CHUNG YANG ; YEAN-WOEI KIANG ; YUH-RENN WU ; Kuo, Yang; Chang, Wen-Yen; Chen, Horng-Shyang; Wu, Yuh-Renn; CHIH-CHUNG YANG ; YEAN-WOEI KIANG Journal of the Optical Society of America B-Optical Physics24
1152013Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward VoltageKawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn; Zhao, Yuji; DenBaars, Steven P.; Nakamura, Shuji; YUH-RENN WU Japanese Journal of Applied Physics1826
1162013Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field managementPal, J.; Migliorato, M. A.; Li, C. K.; Wu, Y. R.; Crutchley, B. G.; Marko, I. P.; Sweeney, S. J.; YUH-RENN WU Journal of Applied Physics1917
1172013Unipolar vertical transport in GaN/AlGaN/GaN heterostructuresNath, D. N.; Yang, Z. C.; Lee, C. Y.; Park, P. S.; Wu, Y. R.; Rajan, S.; YUH-RENN WU Applied Physics Letters5149
1182013Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistorsChen, Chin-Yi; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics2017
1192013The operation principle of the well in quantum dot stack infrared photodetectorLee, J.-H.; Wu, Z.-M.; Liao, Y.-M.; Wu, Y.-R.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE ; YUH-RENN WU Journal of Applied Physics34
1202013On the efficiency decrease of the gan light-emitting nanorod arraysChen, L.-Y.; Li, C.-K.; Tan, J.-Y.; Huang, L.-C.; Wu, Y.-R.; YUH-RENN WU ; JIAN-JANG HUANG IEEE Journal of Quantum Electronics1112
1212012Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDsLi, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU IEEE Transactions on Electron Devices113106
1222012Influence of polarity on carrier transport in semipolar (20(21)over-bar) and (20(2)over-bar1) multiple-quantum-well light-emitting diodesYUH-RENN WU Applied Physics Letters
1232012Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layersYUH-RENN WU Applied Physics Letters
1242012Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diodeWang, Chang-Pei; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics2525
1252012Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche DetectorsSenanayake, Pradeep; Hung, Chung-Hong; Farrell, Alan; Ramirez, David A.; Shapiro, Joshua; Li, Chi-Kang; Wu, Yuh-Renn; Hayat, Majeed M.; Huffaker, Diana L.; YUH-RENN WU Nano Letters4037
1262012Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cellsLang, J. R.; Young, N. G.; Farrell, R. M.; Wu, Y. -R.; Speck, J. S.; YUH-RENN WU Applied Physics Letters7565
1272012Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor DepositionDavid Browne; Micha Fireman; Baishakhi Mazumder; Leah Kuritzky; Yuh-Renn Wu; James Speck; YUH-RENN WU ; �d�|��Semiconductor Science and Technology99
1282012Short channel effects on gallium nitride/gallium oxide nanowire transistorsYu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU Applied Physics Letters2019
1292012Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structureWu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU Applied Physics Letters10594
1302011Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arraysLiang-Yi Chen; Hung-Hsun Huang; Chun-Hsiang Chang; Ying-Yuan Huang; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG ; YUH-RENN WU Optics Express1012
1312011Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface TexturingJIAN-JANG HUANG ; YUH-RENN WU IEEE Electron Device Letters
1322011Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructuresChin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG ; JIAN-ZHANG CHEN ; YUH-RENN WU Journal of Physics D-Applied Physics 3128
1332011Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo methodLu I.-L; YUH-RENN WU ; Singh J.Physica Status Solidi (C) Current Topics in Solid State Physics90
1342011Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistorYu, J. W.; Li, C. K.; Chen, C. Y.; Wu, Y. R.; Chou, L. J.; Peng, L. H.; YUH-RENN WU Applied Physics Letters 00
1352011Study of thermoelectric properties of indium nitride nanowireHuang, Hung-Hsun; Lu, I. Lin; Wu, Yuh-Renn; YUH-RENN WU Physica Status Solidi a-Applications and Materials Science 1211
1362011Study of thermoelectric properties of InGaN/GaN superlatticeHuang H.-H; YUH-RENN WU Materials Research Society Symposium Proceedings00
1372010Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layer with Modulation Doping and Polarization EffectHuang, Chih-I; Chin, Huai-An; Wu, Yuh-Renn ; Cheng, I-Chun ; JIAN-ZHANG CHEN ; Chiu, Kuo-Chuang; Lin, Tzer-ShenIEEE Transactions on Electron Devices4440
1382010Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasersDang, Po-Yuan; Wu, Yuh-Renn; YUH-RENN WU Journal of Applied Physics 00
1392010Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)NHuang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU Optics Express43
1402010Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum WellsChang, Cheng-Yu; Wu, Yuh-Renn IEEE Journal of Quantum Electronics77
1412010Light emission polarization properties of strained (1122) semipolar InGaN quantum wellHuang H.-H; YUH-RENN WU Physica Status Solidi (C) Current Topics in Solid State Physics00
1422010Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum WellHuang, Hung-Hsun; Wu, Yuh-Renn Journal of Applied Physics3734
1432010Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructureChin H.-A.; Huang C.-I.; YUH-RENN WU ; Cheng -C.; Chiu K.-C.; Lin T.-S.; JIAN-ZHANG CHEN Materials Research Society Symposium
1442010A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo methodLu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU Journal of Applied Physics 00
1452010Strain-enhanced photoluminescence from Ge direct transitionCheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H.Applied Physics Letters8170
1462009Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructureChin, Huai-An; Huang, Chih-I; Wu, Yuh-Renn ; Cheng, I-Chun ; Chen, Jian Z.; Chiu, Kuo-Chuang; Lin, Tzer-ShenMRS00
1472009Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod ArraysKun-Mao Pan; Yun-Wei Cheng; Liang-Yi Chen; Ying-Yuan Huang; Min-Yung Ke; Cheng-Pin Chen; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG ; YUH-RENN WU IEEE Photonics Technology Letters43
1482009Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDsWu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU IEEE Journal of Selected Topics in Quantum Electronics8882
1492009Mobility study of polycrystalline MgZnO/ZnO thin film layers with Monte Carlo methodHuang, C.-I.; Wu, Y.-R.; Cheng, I.-C.; Chen, J.Z.; Chiu, K.-C.; Lin, T.-S.; I-CHUN CHENG ; JIAN-ZHANG CHEN ; Wu, Yuh-Renn 13th International Workshop on Computational Electronics, IWCE 200900
1502009Electronic and optical properties of InGaN quantum dot based light emitters for solid state lightingWu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU Journal of Applied Physics117105
1512009Size-Dependent Strain Relaxation and Emission Characteristics of InGaN/GaN Nanorod Light Emitting DiodesWu, Yuh-Renn ; Chiu, Chinghua; Chang, Cheng-Yu; Yu, Peichen; Kuo, Hao-ChungSelected Topics in Quantum Electronics 
1522009Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodesHuang, HH; Wu, YR; YUH-RENN WU Journal of Applied Physics4268
1532009Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam millingChiu C.H; Yu P; Chen J.R; Yen H.H; Kao C.C; Kuo H.C; Lu T.C; Wang S.C; YUH-RENN WU ; Yang H.-W; Yeh W.Y.ECS Transactions00
1542008Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based NanopillarWu, Yuh-Renn ; Ferguson, Ian T.; Taguchi, Tsunemasa; Yu, Peichen; Chiu, C. H.; Ashdown, Ian E.; Park, Seong-Ju; Chang, Cheng-Yu; Kuo, H. C.Eighth International Conference on Solid State Lighting10
1552008氮化銦鎵量子(井/點)白光二極體之理論分析吳育任 
1562008Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam millingYUH-RENN WU Applied Physics Letters 
1572008Extraction of transport dynamics in AlGaN/GaN HFETs through free carrier absorptionWu, YR; Hinckley, JM; Singh, J; YUH-RENN WU Journal of Electronic Materials 44
1582008Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistorsChung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU Applied Physics Letters 1417
1592008Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminumLiu, C.Y.; Datta, A.; Liu, N.W.; Wu, Y.R.; Wang, H.H.; Chuang, T.H.; YUH-RENN WU ; TUNG-HAN CHUANG Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures55
1602007Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and SensorsWu, Yuh-Renn ; Singh, Madhusudan; Singh, Jasprit
1612007Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performanceWu, YR; Singh, J; YUH-RENN WU Journal of Applied Physics4440
1622007Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structuresYang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU Applied Physics Letters5546
1632006Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate lengthWu, YR; Singh, M; Singh, J; YUH-RENN WU IEEE Transactions on Electron Devices5145
1642005Polar heterostructure for multifunction devices: Theoretical studiesWu, YR; Singh, J; YUH-RENN WU IEEE Transactions on Electron Devices3732
1652005Sources of transconductance collapse in III-V nitrides - Consequences of velocity-field relations and source/gate designWu, YR; Singh, M; Singh, J; YUH-RENN WU IEEE Transactions on Electron Devices2923
1662005Velocity overshoot effects and scaling issues in III-V nitridesSingh, M; Wu, YR; Singh, JP; YUH-RENN WU IEEE Transactions on Electron Devices2522
1672004Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensorsWu, YR; Singh, J; YUH-RENN WU Applied Physics Letters5244
1682003Gate leakage suppression and contact engineering in nitride heterostructuresWu, YR; Singh, M; Singh, J; YUH-RENN WU Journal of Applied Physics5146
1692003Examination of LiNbO3/nitride heterostructuresSingh, M; Wu, YR; Singh, J; YUH-RENN WU Solid-State Electronics2018
1702001Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardmentDatta, A; Wu, YR; Wang, YL; YUH-RENN WU Physical Review B7767
1711999Gas-assisted focused-ion-beam lithography of a diamond (100) surfaceDatta, A; Wu, YR; Wang, YL; YUH-RENN WU Applied Physics Letters1713
1721987Tool positioning for noncircular cutting with latheTomizuka, M.; Chen, M. S.; Renn, S. ; Tsao, T. C.Journal of Dynamic Systems, Measurement, and Control