公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
2013 | Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization | Chen, T.-Y.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 7 | 6 | |
2013 | Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 6 | 6 | |
2009 | Effect of tensile stress on mos capacitors with ultra-thin gate oxide | Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU | International Journal of Electrical Engineering | | | |
2014 | Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 1 | 1 | |
1998 | Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area | Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 5 | 4 | |
1990 | Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency | Hwu, J.-G.; Lin, S.-T.; HwuJG | Circuits, Devices and Systems, IEE Proceedings G | | | |
2011 | Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor | Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 2 | 0 | |
2011 | Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
1996 | Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 11 | 10 | |
2002 | Enhanced thermally induced stress effect on an ultrathin gate oxide | Su, J.-L.; Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 8 | 8 | |
2006 | Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2) | Wang, T.-M.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Sensors Journal | 11 | 11 | |
2006 | Impact of strain-temperature stress on ultrathin oxide | Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 | |
2001 | Improvement in oxide thickness uniformity by repeated spike oxidation | Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 4 | 4 | |
1997 | Improvement in radiation-hard CMOS logic gates for noise margin | Yih, S.-J.; Chang, M.-L.; Hwu, J.-G.; Feng, W.-S. | Circuits and Systems, 1997. ISCAS '97. | 0 | 0 | |
2014 | Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale Research Letters | 7 | 8 | |
1999 | Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA) | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 3 | 3 | |
2002 | Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow | Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
2013 | Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2 | Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 11 | 10 | |
2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |