| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |
2 | 2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |
3 | 2011 | Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
4 | 2015 | Tunneling current induced frequency dispersion in the C-V behavior of ultra-thin oxide MOS capacitors | JENN-GWO HWU | ECS Transactions | 3 | 0 | |
5 | 2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
6 | 2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
7 | 2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
8 | 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
9 | 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
10 | 2012 | SiO 2 thickness dependence of C-V dispersion in stacked Al/HfO 2/SiO 2/4H-SiC capacitor | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
11 | 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
12 | 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
13 | 2013 | Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
14 | 2023 | Saturation of Transient Current Read at Millisecond-Scale in MOS Capacitor with Ultra-Thin Oxide when Switching | Huang, Sung Wei; JENN-GWO HWU | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 0 | 0 | |
15 | 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
16 | 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
17 | 2019 | Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | 235th ECS Meeting | 2 | 0 | |
18 | 1989 | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | 胡振國 ; Lin, J. J.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of Electronic Devices and Materials Symposium | | | |
19 | 1994 | Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment | Lu, W. S.; 胡振國 ; Chou, J. S.; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, Si-Chen | 1994 International EDMS | | | |
20 | 1994 | Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation | Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; SI-CHEN LEE ; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 2 | 0 | |
21 | 1986 | Radiation Effects on the Oxide Properties of Silicon MOS Capacitor | 胡振國 ; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔 ; Hwu, Jenn-Gwo ; Wang, Way-Seen; Lee, Si-Chen | Electronic Devices and Materials Symposium | | | |
22 | 2005 | Quality improvement and electrical characteristics of high-k films after receiving direct superimposed with alternative current anodic oxidation compensation | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
23 | 2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
24 | 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
25 | 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
26 | 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
27 | 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
28 | 2015 | Non-uniform hole current induced negative capacitance phenomenon examined by photo-illumination in MOS(n) | JENN-GWO HWU | ECS Transactions | 2 | 0 | |
29 | 1997 | New temperature compensation method for Si wafers in rapid thermal processor using separated Si rings as susceptors | JENN-GWO HWU | Materials Research Society Symposium - Proceedings | | | |
30 | 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
31 | 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
32 | 2015 | Negative gate transconductance in MIS tunnel diode induced by peripheral minority carrier control mechanism | JENN-GWO HWU | ECS Transactions | 4 | 0 | |
33 | 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
34 | 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
35 | 2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
36 | 2013 | Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
37 | 2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
38 | 2005 | Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method | JENN-GWO HWU | ECS Transactions | 1 | 0 | |
39 | 1997 | Improvement in radiation-hard CMOS logic gates for noise margin | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |
40 | 1994 | Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealings | Wu, Y.-L.; Kuo, K.-M.; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | | | |
41 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
42 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | Proceedings of Electronic Devices and Materials Symposium | | | |
43 | 2018 | Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
44 | 1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
45 | 2019 | Enhancement of Coupling Effect in Concentric Double MIS Tunnel Diodes with Local Oxide Thinning Mechanism | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2019, 5th Annual World Congress of Smart Materials, 2019 | | | |
46 | 2019 | Enhancement of Coupling Effect in Concentric Double MIS Tunnel Diodes with Local Oxide Thinning Mechanism | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2019, 5th Annual World Congress of Smart Materials, 2019 | | | |
47 | 2011 | Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
48 | 2011 | Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor | Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 2 | 0 | |
49 | 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
50 | 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
51 | 1985 | The Effect of Charge-Temperature Aging on n-MOSFET | 胡振國 ; Lin, C. M.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of ROC Electronic Devices and Materials Symposium | | | |
52 | 2010 | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
53 | 1990 | Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
54 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
55 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
56 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
57 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
58 | 2015 | The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films | Liao, C.-S.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
59 | 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
60 | 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
61 | 2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
62 | 2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
63 | 2009 | Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region | Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
64 | 1987 | Charge Temperature Effects on Co-60 Irradiated Mos Capacitors | Lee, G. S.; 胡振國 ; 李嗣涔 ; 王維新; Wang, Way-Seen | The 13th EDMS | | | |
65 | 2009 | Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE International Reliability Physics Symposium | 1 | 0 | |
66 | 2009 | Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 1 | 0 | |
67 | 1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 8th EDMS | | | |
68 | 1993 | Aspect ratio design consideration for radiation-hard CMOS inverters | Jeng, M.-J.; JENN-GWO HWU | SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation | | | |
69 | 1997 | Analog maximum, median and minimum circuit | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |