第 1 到 274 筆結果,共 274 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
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1 | 2024 | Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation | Liu, Yuan Ming; Chiu, Jih Chao; Chen, Yu Ciao; Fan, Yu Cheng; Ma, Rong Wei; Yen, Chia Chun; Chen, Tsang Long; Chou, Cheng Hsu; CHEE-WEE LIU | Semiconductor Science and Technology | |||
2 | 2023 | Effects of shear strain on HZO ferroelectric orthorhombic phases | Chen, Yun Wen; CHEE-WEE LIU | Applied Physics Letters | 0 | 0 | |
3 | 2022 | RF Performance of Stacked Si Nanosheets/Nanowires | Lin H; Chou T; Chiu K; Jan S; Chung C; Tsen C; CHEE-WEE LIU | IEEE Electron Device Letters | 0 | 4 | |
4 | 2022 | Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching | Huang B.-W; Tsai C.-E; Liu Y.-C; Tu C.-T; Hsieh W.-H; Jan S.-R; Chen Y.-R; Chueh S.-J; Cheng C.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
5 | 2022 | Boost of orthorhombic population with amorphous SiO2interfacial layer-a DFT study | Chen Y.-W; CHEE-WEE LIU | Semiconductor Science and Technology | 3 | 3 | |
6 | 2022 | Electrical Measurements to Detect Liquid Concentration | Yeh C.-H; Lee C.-T; Chiu J.-C; Wu Y.-T; Lin C.-T; Yu C; Chuang T.-S; CHEE-WEE LIU | IEEE Transactions on Semiconductor Manufacturing | 25 | 0 | |
7 | 2022 | Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching | Tu C.-T; Hsieh W.-H; Huang B.-W; Chen Y.-R; Liu Y.-C; Tsai C.-E; Chueh S.-J; CHEE-WEE LIU | IEEE Electron Device Letters | 11 | 10 | |
8 | 2022 | Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs | Lee M.-X; Chiu J.-C; Li S.-L; Sarkar E; Chen Y.-C; Yen C.-C; Chen T.-L; Chou C.-H; CHEE-WEE LIU | IEEE Journal of the Electron Devices Society | 1 | 1 | |
9 | 2021 | Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure | Chen D et al.; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; Laroche D. | Applied Physics Letters | 0 | 1 | |
10 | 2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | CHEE-WEE LIU ; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
11 | 2021 | Architecture and Optimization of 2T (Footprint) SRAM | CHEE-WEE LIU ; Chung C.-C; Lin H.-C; Huang B.-W; Tsen C.-J; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
12 | 2021 | Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching | CHEE-WEE LIU ; Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
13 | 2021 | Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1?xZrxO2 diodes | CHEE-WEE LIU ; Hsiang K.-Y; Liao C.-Y; Wang J.-F; Lou Z.-F; Lin C.-Y; Chiang S.-H; Liu C.-W; Hou T.-H; Lee M.-H.; CHEE-WEE LIU | Nanomaterials | |||
14 | 2021 | Thermally Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching | CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
15 | 2021 | Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | CHEE-WEE LIU ; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Physical Review B | |||
16 | 2021 | RF Performance of Stacked Si Nanosheet nFETs | CHEE-WEE LIU ; Lin H.-C; Chou T; Chung C.-C; Tsen C.-J; Huang B.-W; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
17 | 2021 | Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier | CHEE-WEE LIU ; Chiu J; Li S; Lee M; Yen C; Chen T; Chou C; CHEE-WEE LIU | IEEE Journal of the Electron Devices Society | |||
18 | 2020 | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | CHEE-WEE LIU ; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; CHEE-WEE LIU | Semiconductor Science and Technology | |||
19 | 2020 | Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells | CHEE-WEE LIU ; Shashkin, A.A.; Melnikov, M.Y.; Dolgopolov, V.T.; Radonji?, M.M.; Dobrosavljevi?, V.; Huang, S.-H.; Liu, C.W.; Zhu, A.Y.X.; Kravchenko, S.V.; CHEE-WEE LIU | Physical Review B | |||
20 | 2020 | Metallic state in a strongly interacting spinless two-valley electron system in two dimensions | CHEE-WEE LIU ; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU | Physical Review B | |||
21 | 2020 | Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors | CHEE-WEE LIU ; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; CHEE-WEE LIU | IEEE Electron Device Letters | |||
22 | 2020 | Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors | CHEE-WEE LIU ; Yen C.-C; Tai A.-H; Liu Y.-C; Chen T.-L; Chou C.-H; CHEE-WEE LIU | IEEE Journal of the Electron Devices Society | |||
23 | 2020 | Energy preference of uniform polarization switching for HfO2 by first-principle study | CHEE-WEE LIU ; Chen Y.-W; Fan S.-T; CHEE-WEE LIU | Journal of Physics D: Applied Physics | |||
24 | 2020 | Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure | Liu, X.; Lu, T.-M.; Harris, C.T.; Lu, F.-L.; Liu, C.-Y.; JIUN-YUN LI ; CHEE-WEE LIU ; Du, Rui-Rui | Physical Review B | 1 | 0 | |
25 | 2020 | Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs | Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 2 | |
26 | 2020 | Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations | Fan, S.-T.; Chen, Y.-W.; Liu, C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 22 | 24 | |
27 | 2020 | On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges | CHEE-WEE LIU ; Ye, H.-Y.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
28 | 2020 | Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition | CHEE-WEE LIU ; Tsai, C.-E.; Lu, F.-L.; Liu, Y.-C.; Ye, H.-Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
29 | 2019 | Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | CHEE-WEE LIU ; Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Zhu, A.Y.X.; Kravchenko, S.V.; Huang, S.-H.; CHEE-WEE LIU | Physical Review B | |||
30 | 2019 | Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance | CHEE-WEE LIU ; Chung, C.-C.; Lin, H.H.; Wan, W.K.; Yang, M.-T.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
31 | 2019 | Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures | CHEE-WEE LIU ; Tai A.-H; Yen C.-C; Chen T.-L; Chou C.-H; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
32 | 2019 | Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs | CHEE-WEE LIU ; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; CHEE-WEE LIU | IEEE Electron Device Letters | |||
33 | 2019 | Theoretical calculation of ferroelectric Hf<inf>1-x</inf>ZrxO<inf>2</inf> by first-principle molecular dynamic simulation | CHEE-WEE LIU ; Chen, P.-S.; CHEE-WEE LIU | Materials Research Express | |||
34 | 2019 | Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08 | CHEE-WEE LIU ; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU | Thin Solid Films | |||
35 | 2019 | Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method | CHEE-WEE LIU ; Tsou Y.-J; Chiu J.-C; Shih H.-C; CHEE-WEE LIU | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits | |||
36 | 2019 | Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride | CHEE-WEE LIU ; Huang, C.-H.; Tsai, C.-E.; Chen, Y.-R.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
37 | 2018 | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | E. Bussmann; J. K. Gamble; J. C. Koepke; D. Laroche; S. H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; B. S. Swartzentruber; M. P. Lilly; M. S. Carroll; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Physical Review Materials | 2 | 1 | |
38 | 2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | CHEE-WEE LIU ; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; CHEE-WEE LIU | IEEE Electron Device Letters | |||
39 | 2018 | Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well | CHEE-WEE LIU ; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; CHEE-WEE LIU | Optical Materials Express | |||
40 | 2018 | Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields | CHEE-WEE LIU ; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | JETP Letters | |||
41 | 2018 | Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence | CHEE-WEE LIU ; Ye H.-Y; Chung C.-C; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
42 | 2018 | Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition | CHEE-WEE LIU ; Tsai C.-E; Lu F.-L; Chen P.-S; CHEE-WEE LIU | Thin Solid Films | |||
43 | 2018 | Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications | CHEE-WEE LIU ; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
44 | 2018 | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | CHEE-WEE LIU | Physical Review Materials | |||
45 | 2017 | Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys | CHEE-WEE LIU ; Lan H.-S; Chang S.T; CHEE-WEE LIU | Physical Review B | |||
46 | 2017 | Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells | CHEE-WEE LIU ; Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Journal of Applied Physics | |||
47 | 2017 | Indication of band flattening at the Fermi level in a strongly correlated electron system | CHEE-WEE LIU ; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Scientific Reports | 22 | 22 | |
48 | 2017 | Band calculation of lonsdaleite Ge | CHEE-WEE LIU ; Chen P.-S; Fan S.-T; Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | |||
49 | 2017 | Process simulation of pulsed laser annealing on epitaxial Ge on Si | CHEE-WEE LIU ; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; CHEE-WEE LIU | ECS Journal of Solid State Science and Technology | |||
50 | 2017 | Effective g factor of low-density two-dimensional holes in a Ge quantum well | T. M. Lu; C. T. Harris; S. –H. Huang; Y. Chuang; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 15 | 11 | |
51 | 2017 | Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system | T. M. Lu; L. A. Tracy; D. Laroche; S. –H. Huang; Y. Chuang; Y. –H Su; JIUN-YUN LI ; CHEE-WEE LIU | Scientific Reports | 9 | 7 | |
52 | 2017 | High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness | CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
53 | 2017 | Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces | CHEE-WEE LIU ; Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | |||
54 | 2017 | Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack | CHEE-WEE LIU ; Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
55 | 2016 | Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation | Luo, S.; Eisler, C.; Wong, T.-H.; Xiao, H.; Lin, C.-E.; Wu, T.-T.; Shen, C.-H.; Shieh, J.-M.; Tsai, C.-C.; Liu, C.-W.; Atwater, H.A.; Goddard, W.A.; Lee, J.-H.; CHEE-WEE LIU ; JIUN-HAW LEE | Acta Materialia | 14 | 13 | |
56 | 2016 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells | Lin C.-Y; Huang C.-H; Huang S.-H; Chang C.-C; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P. | Applied Physics Letters | 11 | 10 | |
57 | 2016 | Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se<inf>2</inf> solar modules | CHEE-WEE LIU ; Zhu, X.; Cheng, T.-H.; CHEE-WEE LIU | Electronic Materials Letters | |||
58 | 2016 | The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance | CHEE-WEE LIU ; Fan, S.-T.; Yan, J.-Y.; Lai, D.-C.; CHEE-WEE LIU | Solid-State Electronics | |||
59 | 2016 | High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential | Lu, T.M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; CHEE-WEE LIU ; JIUN-YUN LI | Scientific Reports | 2 | 2 | |
60 | 2016 | Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure | D. Laroche; S. –H. Huang; Y. Chuang; C. W. Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 20 | 18 | |
61 | 2016 | Abnormal threshold voltage shift of amorphous InGaZnO thin-film transistors due to mobile sodium | Lo C; Feng Z.-L; Huang W.-L; CHEE-WEE LIU ; Chen T.-L; Chou C.-H. | IEEE Journal of the Electron Devices Society | 7 | 5 | |
62 | 2016 | Passivation of Al<inf>2</inf>O<inf>3</inf> / TiO<inf>2</inf> on monocrystalline Si with relatively low reflectance | CHEE-WEE LIU ; Lu, C.-T.; Huang, Y.-S.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | |||
63 | 2015 | Scattering mechanism in shallow undoped Si/SiGe quantum wells | D. Laroche; S. –H. Huang; E. Nielsen; Y. Chuang; Jiun-Yun Li; C. W. Liu; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | AIP Advances | 24 | 21 | |
64 | 2015 | Asymmetric keep-out zone of through-silicon via using 28-nm technology node | CHEE-WEE LIU ; Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
65 | 2015 | Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well | CHEE-WEE LIU ; Melnikov, M.Yu.; Shashkin, A.A.; Dolgopolov, V.T.; Huang, S.-H.; Liu, C.W.; Kravchenko, S.V.; CHEE-WEE LIU | Applied Physics Letters | |||
66 | 2015 | The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing | CHEE-WEE LIU ; Huang, S.-H.; Lu, F.-L.; Huang, W.-L.; Huang, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
67 | 2015 | Reply to 'comment on 'A compact analytic model of the strain field induced by through ilicon vias'' | CHEE-WEE LIU ; Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
68 | 2015 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; CHEE-WEE LIU | IEEE Transactions on Nanotechnology | |||
69 | 2015 | Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure | Laroche, D.; Huang, S.-H.; Nielsen, E.; CHEE-WEE LIU ; JIUN-YUN LI ; Lu, T.M. | Applied Physics Letters | 7 | 4 | |
70 | 2015 | Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry | CHEE-WEE LIU ; Xie, D.; Qiu, Z.R.; Talwar, D.N.; Liu, Y.; Song, J.-H.; Huang, J.-L.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU | International Journal of Nanotechnology | |||
71 | 2015 | Enhanced light emission from Ge by GeO<inf>2</inf> micro hemispheres | CHEE-WEE LIU ; Chen, Y.-Y.; Yen, C.-C.; Chang, T.-Y.; CHEE-WEE LIU | Solid-State Electronics | |||
72 | 2014 | Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors | CHEE-WEE LIU ; Lan, H.-S.; CHEE-WEE LIU | Applied Physics Letters | |||
73 | 2014 | Toward efficient and omnidirectional n-type si solar cells: Concurrent improvement in optical and electrical characteristics by employing microscale hierarchical structures | CHEE-WEE LIU ; Wang, H.-P.; Lin, T.-Y.; Tsai, M.-L.; Tu, W.-C.; Huang, M.-Y.; Liu, C.-W.; Chueh, Y.-L.; He, J.-H.; CHEE-WEE LIU | ACS Nano | |||
74 | 2014 | Hysteresis reduction by fluorine incorporation into high permittivity tetragonal ZrO<inf>2</inf> on Ge | CHEE-WEE LIU ; Chang, H.-C.; Lin, C.-M.; Huang, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
75 | 2014 | Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
76 | 2014 | New materials for post-Si computing | CHEE-WEE LIU ; Liu, C.W.; \\Ostling, M.; Hannon, J.B.; CHEE-WEE LIU | MRS Bulletin | |||
77 | 2014 | Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation | Luo, S.; JIUN-HAW LEE ; CHEE-WEE LIU ; Shieh, J. M.; Shen, C. H.; Wu, T. T.; Jang, D. C.; Greer, J. R. | Applied Physics Letters | 35 | 34 | |
78 | 2014 | The pn junctions of epitaxial germanium on silicon by solid phase doping | CHEE-WEE LIU ; Tu, W.-H.; Hsu, S.-H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
79 | 2014 | Fabrication and characterization of Cu(In,Ga)Se<inf>2</inf> p-channel thin film transistors | CHEE-WEE LIU ; Zhu, X.; CHEE-WEE LIU | Applied Physics Letters | |||
80 | 2014 | Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells | CHEE-WEE LIU ; Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Kravchenko, S.V.; Huang, S.-H.; CHEE-WEE LIU | JETP Letters | |||
81 | 2013 | GeO<inf>2</inf> passivation for low surface recombination velocity on Ge surface | CHEE-WEE LIU ; Chen, Y.-Y.; Chang, H.-C.; Chi, Y.-H.; Huang, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
82 | 2013 | Enhanced current drive of double-gate α-IGZO thin-film transistors | CHEE-WEE LIU ; Chen, T.-L.; Huang, K.-C.; Lin, H.-Y.; Chou, C.H.; Lin, H.H.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
83 | 2013 | Radiation impact of EUV on high-performance Ge MOSFETs | CHEE-WEE LIU ; Chen, Y.-T.; Chang, H.-C.; Wong, I.-H.; Sun, H.-C.; Ciou, H.-J.; Yeh, W.-T.; Luo, S.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
84 | 2013 | Modeling and optimization of edge dislocation stressors | CHEE-WEE LIU ; Tsai, M.-H.; Jan, S.-R.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
85 | 2013 | Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness | CHEE-WEE LIU ; Lin, C.-M.; Chang, H.-C.; Wong, I.-H.; Luo, S.-J.; Liu, C.W.; Hu, C.; CHEE-WEE LIU | Applied Physics Letters | |||
86 | 2013 | Improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics treated by remote NH <inf>3</inf> plasma | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Lin, H.-C. ; Kuo, C.-L. ; Lee, M.-H.; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Surface Science | 11 | 11 | |
87 | 2013 | Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions | CHEE-WEE LIU | ACS Nano | |||
88 | 2013 | Above-11%-efficiency organic-inorganic hybrid solar cells with omnidirectional harvesting characteristics by employing hierarchical photon-trapping structures | CHEE-WEE LIU ; Wei, W.-R.; Tsai, M.-L.; Ho, S.-T.; Tai, S.-H.; Ho, C.-R.; Tsai, S.-H.; Liu, C.-W.; Chung, R.-J.; He, J.-H.; CHEE-WEE LIU | Nano Letters | |||
89 | 2013 | Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration | CHEE-WEE LIU ; Sun, H.Y.; Lien, S.-C.; Qiu, Z.R.; Wang, H.C.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU | Optics Express | |||
90 | 2012 | First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO <inf>2</inf> interface | CHEE-WEE LIU ; Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; CHEE-WEE LIU | Journal of Applied Physics | |||
91 | 2012 | A transition of three to two dimensional Si growth on Ge (100) substrate | CHEE-WEE LIU ; Tu, W.-H.; Lee, C.-H.; Chang, H.T.; Lin, B.-H.; Hsu, C.-H.; Lee, S.W.; CHEE-WEE LIU | Journal of Applied Physics | |||
92 | 2012 | Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures | CHEE-WEE LIU ; Huang, S.-H.; Lu, T.-M.; Lu, S.-C.; Lee, C.-H.; Liu, C.W.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | |||
93 | 2012 | LDMOS transistor high-frequency performance enhancements by strain | CHEE-WEE LIU ; Chen, K.-M.; Huang, G.-W.; Chen, B.-Y.; Chiu, C.-S.; Hsiao, C.-H.; Liao, W.-S.; Chen, M.-Y.; Yang, Y.-C.; Wang, K.-L.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
94 | 2012 | Surface passivation of Cu(In,Ga)Se <inf>2</inf> using atomic layer deposited Al <inf>2</inf>O <inf>3</inf> | CHEE-WEE LIU ; Hsu, W.-W.; Chen, J.Y.; Cheng, T.-H.; Lu, S.C.; Ho, W.-S.; Chen, Y.-Y.; Chien, Y.-J.; CHEE-WEE LIU | Applied Physics Letters | |||
95 | 2012 | A compact analytic model of the strain field induced by through silicon vias | CHEE-WEE LIU ; Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
96 | 2012 | Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Physical Review B - Condensed Matter and Materials Physics | |||
97 | 2012 | Differential Gene Expression Between the Porcine Morula and Blastocyst | Hsu, C. C.; Lin, E. C.; Chen, S. C.; Huang, S. C.; Liu, B. H.; Yu, Y. H.; Chen, C. C.; Yang, C. C.; Lien, C. Y.; Wang, Y. H.; Liu, C. W.; Mersmann, H. J.; Cheng, W. T. K.; SHIH-TORNG DING ; CHIH-CHUNG YANG ; CHEE-WEE LIU ; EN-CHUNG LIN ; JERRY CHENG-CHE HSU | Reproduction in Domestic Animals | 5 | 6 | |
98 | 2012 | Ge out diffusion effect on SiGe nanoring formation | CHEE-WEE LIU ; Tu, W.-H.; Huang, S.-H.; CHEE-WEE LIU | Journal of Applied Physics | |||
99 | 2012 | Direct and indirect radiative recombination from Ge | CHEE-WEE LIU ; Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; Jan, S.-R.; Chen, C.-Y.; Chan, S.T.; Nien, Y.-H.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Thin Solid Films | |||
100 | 2012 | Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers | CHEE-WEE LIU ; Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
101 | 2011 | Toward an ideal animal model to trace donor cell fates after stem cell therapy: Production of stably labeled multipotent mesenchymal stem cells from bone marrow of transgenic pigs harboring enhanced green fluorescence protein gene | Hsiao F.S.H.; Lian W.S.; Lin S.P. ; Lin C.J.; Lin Y.S.; Cheng E.C.H.; Liu C.W. ; Cheng C.C.; Cheng P.H.; Ding S.T. ; Lee K.H.; Kuo T.F. | Journal of Animal Science | 11 | 9 | |
102 | 2011 | Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation | CHEE-WEE LIU ; Chen, Y.-Y.; Chen, J.Y.; Hsu, R.-J.; Ho, W.S.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU | Journal of the Electrochemical Society | |||
103 | 2011 | Influence of defects and interface on radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | |||
104 | 2011 | Electron scattering in Ge metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; CHEE-WEE LIU | Applied Physics Letters | |||
105 | 2011 | Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface | CHEE-WEE LIU ; Ho, W.S.; Deng, Y.; Chen, Y.-Y.; Cheng, T.-H.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU | Thin Solid Films | |||
106 | 2011 | Effect of material physical properties on residual stress measurement by EDM hole-drilling method | CHEE-WEE LIU ; Lee, H.T.; Tai, T.Y.; Liu, C.; Hsu, F.C.; Hsu, J.M.; CHEE-WEE LIU | Journal of Engineering Materials and Technology, Transactions of the ASME | |||
107 | 2011 | Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates | CHEE-WEE LIU ; Chen, Y.-T.; Lan, H.-S.; Hsu, W.; Fu, Y.-C.; Lin, J.-Y.; CHEE-WEE LIU | Applied Physics Letters | |||
108 | 2011 | Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Huang, S.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | |||
109 | 2011 | Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers | CHEE-WEE LIU ; Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; CHEE-WEE LIU | Applied Physics Letters | |||
110 | 2011 | High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate | CHEE-WEE LIU ; Tang, S.-H.; Chang, E.Y.; Hudait, M.; Maa, J.-S.; Liu, C.-W.; Luo, G.-L.; Trinh, H.-D.; Su, Y.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
111 | 2011 | Voltage linearity improvement of HfO<inf>2</inf>-based metal-insulator- metal capacitors with H<inf>2</inf> O prepulse treatment | CHEE-WEE LIU ; Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Chang, H.-L.; CHEE-WEE LIU | Journal of the Electrochemical Society | |||
112 | 2010 | Flexible single-crystalline Ge p-channel thin-film transistors with schottky-barrier source/drain on polyimide substrates | CHEE-WEE LIU ; Hsu, W.; Peng, C.-Y.; Lin, C.-M.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
113 | 2010 | Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors | CHEE-WEE LIU ; Ma, R.M.; Peng, R.M.; Wen, X.N.; Dai, L.; Liu, C.; Sun, T.; Xu, W.J.; Qin, G.G.; CHEE-WEE LIU | Journal of Nanoscience and Nanotechnology | |||
114 | 2010 | Insulating halos to boost planar NMOSFET performance | CHEE-WEE LIU ; Hsu, W.-W.; Lai, C.-Y.; Liu, C.W.; Ko, C.-H.; Kuan, T.-M.; Wang, T.-J.; Lee, W.-C.; Wann, C.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
115 | 2010 | Composition redistribution of self-assembled Ge islands on Si (001) during annealing | CHEE-WEE LIU ; Lee, S.W.; Chang, H.T.; Lee, C.H.; Cheng, S.L.; CHEE-WEE LIU | Thin Solid Films | |||
116 | 2010 | Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer | CHEE-WEE LIU ; Hsueh, H.T.; Hsueh, T.J.; Chang, S.J.; Hung, F.Y.; Hsu, C.L.; Weng, W.Y.; Liu, C.W.; Lee, Y.H.; Dai, B.T.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | |||
117 | 2010 | Erratum: Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s (Applied Physics Letters (2009) 94 (182102)) | CHEE-WEE LIU ; Lu, T.M.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
118 | 2010 | Capacitorless 1T memory cells using channel traps at grain boundaries | CHEE-WEE LIU ; Chen, Y.-T.; Sun, H.-C.; Huang, C.-F.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
119 | 2010 | Metal-insulator-semiconductor photodetectors | CHEE-WEE LIU ; Lin, C.-H.; CHEE-WEE LIU | Sensors | |||
120 | 2010 | Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors | CHEE-WEE LIU ; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
121 | 2010 | Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | |||
122 | 2010 | Competitiveness between direct and indirect radiative transitions of Ge | CHEE-WEE LIU ; Cheng, T.-H.; Ko, C.-Y.; Chen, C.-Y.; Peng, K.-L.; Luo, G.-L.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
123 | 2010 | Strain-enhanced photoluminescence from Ge direct transition | Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H. | Applied Physics Letters | 81 | 70 | |
124 | 2010 | Hexagonal SiGe quantum dots and nanorings on Si(110) | CHEE-WEE LIU ; Lee, C.-H.; Liu, C.W.; Chang, H.-T.; Lee, S.W.; CHEE-WEE LIU | Journal of Applied Physics | |||
125 | 2010 | Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions | CHEE-WEE LIU ; Lin, C.-H.; CHEE-WEE LIU | Thin Solid Films | |||
126 | 2009 | Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide | Hsu, W.-L.; Lin, C.-T.; Cheng, T.-H.; Yen, S.-C.; Liu, C.-W.; Tsai, D.-P.; GONG-RU LIN ; CHEE-WEE LIU | Chinese Optics Letters | 3 | 3 | |
127 | 2009 | Luminescent-wavelength tailoring silicon-rich silicon nitride LED | Lin, C.-T.; Liu, C.; GONG-RU LIN ; CHEE-WEE LIU | Chinese Optics Letters | 1 | 1 | |
128 | 2009 | Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film | Hsu, W.-L.; Pai, Y.-H.; Meng, F.-S.; Liu, C.-W.; GONG-RU LIN ; CHEE-WEE LIU | Applied Physics Letters | 17 | 15 | |
129 | 2009 | Si/ Si<inf>0.2</inf>Ge<inf>0.8</inf> /Si quantum well Schottky barrier diodes | CHEE-WEE LIU ; Kuo, P.-S.; Peng, C.-Y.; Lee, C.-H.; Shen, Y.-Y.; Chang, H.-C.; CHEE-WEE LIU | Applied Physics Letters | |||
130 | 2009 | Effects of applied mechanical uniaxial and biaxial tensile strain on the flatband voltage of (001), (110), and (111) metal-oxide-silicon capacitors | CHEE-WEE LIU ; Peng, C.-Y.; Yang, Y.-J.; Fu, Y.-C.; Huang, C.-F.; Chang, S.-T.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
131 | 2009 | Electroluminescence from monocrystalline silicon solar cell | CHEE-WEE LIU ; Cheng, T.-H.; Kuo, P.-S.; Ko, C.-Y.; Chen, C.-Y.; CHEE-WEE LIU | Journal of Applied Physics | |||
132 | 2009 | Flexible Ge-on-polyimide detectors | CHEE-WEE LIU ; Ho, W.S.; Dai, Y.-H.; Deng, Y.; Lin, C.-H.; Chen, Y.-Y.; Lee, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
133 | 2009 | Dynamic bias instability of p-channel polycrystalline-silicon thin-film transistors induced by impact ionization | CHEE-WEE LIU ; Huang, C.-F.; Sun, H.-C.; Yang, Y.-J.; Chen, Y.-T.; Ku, C.-Y.; Liu, C.W.; Hsu, Y.-J.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
134 | 2009 | Single crystalline film on glass for thin film solar cells | CHEE-WEE LIU ; Lin, C.-H.; Yang, Y.-J.; Encinas, E.; Chen, W.-Y.; Tsai, J.-J.; CHEE-WEE LIU | Journal of Nanoscience and Nanotechnology | |||
135 | 2009 | SiGe nanorings by ultrahigh vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, C.-H.; Shen, Y.-Y.; Liu, C.W.; Lee, S.W.; Lin, B.-H.; Hsu, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
136 | 2009 | Narrow-band metal-oxide-semiconductor photodetector | CHEE-WEE LIU ; Ho, W.S.; Lin, C.-H.; Cheng, T.-H.; Hsu, W.W.; Chen, Y.-Y.; Kuo, P.-S.; CHEE-WEE LIU | Applied Physics Letters | |||
137 | 2009 | Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s | CHEE-WEE LIU ; Lu, T.M.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
138 | 2009 | The dependence of the performance of strained NMOSFETs on channel width | Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
139 | 2009 | Comprehensive study of the Raman shifts of strained silicon and germanium | CHEE-WEE LIU ; Peng, C.-Y.; Huang, C.-F.; Fu, Y.-C.; YI-HSUAN YANG ; Lai, C.-Y.; Chang, S.-T.; CHEE-WEE LIU | Journal of Applied Physics | |||
140 | 2009 | Evolution of composition distribution of Si-capped Ge islands on Si(001) | CHEE-WEE LIU ; Lee, S.W.; Lee, C.-H.; Chang, H.T.; Cheng, S.L.; CHEE-WEE LIU | Thin Solid Films | |||
141 | 2008 | 2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions | Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 22 | 19 | |
142 | 2008 | Superior n-MOSFET performance by optimal stress design | Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
143 | 2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Transactions on Nanotechnology | 6 | 6 | |
144 | 2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
145 | 2008 | Logic 90 nm n-channel field effect transistor current and speed enhancements through external mechanical package straining | CHEE-WEE LIU ; Liao, W.-S.; Huang, S.-Y.; Tang, M.-C.; Liaw, Y.-G.; Chen, K.-M.; Shih, T.; Tsen, H.-C.; Chung, L.; CHEE-WEE LIU | Japanese Journal of Applied Physics | |||
146 | 2008 | Studying the strain effect on silicon atomic wires | CHEE-WEE LIU ; Liao, S.-H.; Chang, S.-T.; Huang, H.-C.; Liu, C.-W.; Lin, C.-Y.; CHEE-WEE LIU | Journal of the Korean Physical Society | |||
147 | 2008 | Fano interference in the quantum wellquantum dot system | CHEE-WEE LIU ; Abramov, A.A.; Lin, C.-H.; CHEE-WEE LIU | International Journal of Nanoscience | |||
148 | 2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Applied Surface Science | |||
149 | 2008 | Reduction of crosstalk between dual power amplifiers using laser treatment | CHEE-WEE LIU ; Chang, H.-L.; Kuo, P.-S.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; CHEE-WEE LIU | IEEE Microwave and Wireless Components Letters | |||
150 | 2008 | Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; CHEE-WEE LIU | Applied Surface Science | |||
151 | 2008 | Carrier gas effects on the SiGe quantum dots formation | CHEE-WEE LIU ; Lee, C.-H.; Yu, C.-Y.; Lin, C.M.; Liu, C.W.; Lin, H.; Chang, W.-H.; CHEE-WEE LIU | Applied Surface Science | |||
152 | 2008 | PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiN<inf>x</inf> stressing layer | CHEE-WEE LIU ; Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chen, K.-M.; Huang, S.-Y.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
153 | 2008 | Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Peng, C.-Y.; Yang, Y.-J.; Sun, H.-C.; Chang, H.-C.; Kuo, P.-S.; Chang, H.-L.; Liu, C.-Z.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
154 | 2008 | Investigation of reliability characteristics in NMOS and PMOS FinFETs | CHEE-WEE LIU ; Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chakraborty, S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
155 | 2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
156 | 2008 | PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer | Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee | IEEE Electron Device Letters | |||
157 | 2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
158 | 2007 | Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition | Chen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee | IEEE Transactions on Electron Devices | 33 | 30 | |
159 | 2007 | Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors | Ho, W. S.; Huang, C.-F.; Chang, S. T.; CHEE-WEE LIU ; YAO-JOE YANG | Applied Physics Letters | 103 | 98 | |
160 | 2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
161 | 2007 | Ge-on-glass detectors | CHEE-WEE LIU ; Lin, C.-H.; Chiang, Y.-T.; Hsu, C.-C.; Lee, C.-H.; Huang, C.-F.; Lai, C.-H.; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
162 | 2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | CHEE-WEE LIU ; Maikap, S.; Lee, M.H.; Chang, S.T.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
163 | 2007 | Transport mechanism of SiGe dot MOS tunneling diodes | CHEE-WEE LIU ; Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
164 | 2007 | Dark current reduction of Ge MOS photodetectors by high work function electrodes | CHEE-WEE LIU ; Kuo, P.-S.; Fu, Y.-C.; Chang, C.-C.; Lee, C.-H.; CHEE-WEE LIU | Electronics Letters | |||
165 | 2007 | The intermixing and strain effects on electroluminescence of SiGe dots | MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU | Journal of Applied Physics | 29 | 29 | |
166 | 2007 | Performance enhancement of the nMOSFET low-noise amplifier by package strain | Hua, W.-C.; Chang, H.-L.; Wang, T.; Lin, C.-Y.; Lin, C.-P.; Lu, S.S.; Meng, C.C.; Liu, C.W.; SHEY-SHI LU ; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 1 | 1 | |
167 | 2007 | Broadband SiGeSi quantum dot infrared photodetectors | CHEE-WEE LIU ; Lin, C.-H.; Yu, C.-Y.; Peng, C.-Y.; Ho, W.S.; CHEE-WEE LIU | Journal of Applied Physics | |||
168 | 2006 | SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance | Shi, J.-W.; Chiu, P.-H.; Huang, F.-H.; Wu, Y.-S.; Lu, J.-Y.; CHI-KUANG SUN ; CHEE-WEE LIU ; Chen P.-S. | Applied Physics Letters | 6 | 4 | |
169 | 2006 | Buckling characteristics of SiGe layers on viscous oxide | Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU | Journal of Applied Physics | 3 | 3 | |
170 | 2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; CHEE-WEE LIU | Applied Physics Letters | |||
171 | 2006 | Field-emission properties of self-assembled Si-capped Ge quantum dots | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, L.J.; CHEE-WEE LIU | Thin Solid Films | |||
172 | 2006 | Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Japanese Journal of Applied Physics Part1 | |||
173 | 2006 | Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; CHEE-WEE LIU | Thin Solid Films | |||
174 | 2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
175 | 2006 | Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si nMOSFETs with HfO<inf>2</inf> gate dielectric | CHEE-WEE LIU ; Yeo, C.C.; Cho, B.J.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
176 | 2006 | Performance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain | Yuan, Feng; Huang, Ching-Fang; Yu, Ming-Hsin; Liu, Chee Wee | IEEE Transactions on Electron Devices | 14 | 12 | |
177 | 2006 | Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors | Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | |||
178 | 2006 | Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology | Wu, San Lein; Lin, Yu Min; Chang, Shoou Jinn; Lu, Shin Chi; Chen, Pang Shiu; Liu, Chee Wee | IEEE Electron Device Letters | 19 | 16 | |
179 | 2006 | Electroluminescence from the Ge quantum dot MOS tunneling diodes | MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | 30 | 29 | |
180 | 2006 | delta-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; CHEE-WEE LIU ; CHIEN-CHENG CHANG | Thin Solid Films | 16 | 14 | |
181 | 2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | 29 | 31 | |
182 | 2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | CHEE-WEE LIU ; Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; CHEE-WEE LIU | Solid-State Electronics | |||
183 | 2006 | Low-temperature fabrication and characterization of Ge-on-insulator structures | CHEE-WEE LIU ; Yu, C.-Y.; Lee, C.-Y.; Lin, C.-H.; CHEE-WEE LIU | Applied Physics Letters | |||
184 | 2006 | Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; YING-JAY YANG ; Peng, C.-Y.; Yuan, F.; CHEE-WEE LIU | Applied Physics Letters | |||
185 | 2005 | Mobility-enhancement technologies | Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee | IEEE Circuits and Devices Magazine | 102 | 0 | |
186 | 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU | Applied Physics Letters | 13 | 12 | |
187 | 2005 | Visible photoluminescence from Ge quantum dots | CHEE-WEE LIU ; Sun, K.W.; Sue, S.H.; CHEE-WEE LIU | Physica E: Low-Dimensional Systems and Nanostructures | |||
188 | 2005 | Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Applied Physics | |||
189 | 2005 | Threading dislocation induced low frequency noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
190 | 2005 | Electron mobility enhancement using ultrathin pure Ge on Si substrate | CHEE-WEE LIU ; Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
191 | 2005 | SiGe/Si PMOSFET using graded channel technique | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | |||
192 | 2005 | Electroluminescence from metal/oxide/strained-Si tunneling diodes | MING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU | Applied Physics Letters | 64 | 42 | |
193 | 2005 | Abnormal hole mobility of biaxial strained Si | MING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU | Journal of Applied Physics | 19 | 20 | |
194 | 2005 | The characteristic of HfO2 on strained SiGe | CHEE-WEE LIU ; Chen, T.C.; Lee, L.S.; Lai, W.Z.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | |||
195 | 2004 | The evolution of electroluminescence in Ge quantum-dot diodes with the fold number | Peng, Y.H.; Hsu, C.-H.; CHIEH-HSIUNG KUAN ; CHEE-WEE LIU ; Chen, P.S.; Tsai, M.-J.; Suen, Y.W. | Applied Physics Letters | 18 | 17 | |
196 | 2004 | Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors | Shi, Jin-Wei; Liu, Yin-Hsin; Liu, Chee-Wee | Journal of Lightwave Technology | |||
197 | 2004 | Hole effective mass in strained Si<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Chang, S.T.; CHEE-WEE LIU | Journal of Applied Physics | |||
198 | 2004 | The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier | CHEE-WEE LIU ; Hua, W.-C.; Yang, T.-Y.; CHEE-WEE LIU | Applied Surface Science | |||
199 | 2004 | Mechanically strained Si-SiGe HBTs | CHEE-WEE LIU ; Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
200 | 2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
201 | 2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | |||
202 | 2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | |||
203 | 2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | |||
204 | 2004 | Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors | CHEE-WEE LIU ; Shi, J.-W.; Liu, Y.-H.; CHEE-WEE LIU | Journal of Lightwave Technology | |||
205 | 2004 | Performance enhancement of high-speed SiGe-based heterojunction phototransistor with substrate terminal | CHEE-WEE LIU ; Shi, J.-W.; Pel, Z.; Yuan, F.; Hsu, Y.-M.; Liu, C.-W.; Lu, S.C.; Tsai, M.-J.; CHEE-WEE LIU | Applied Physics Letters | |||
206 | 2004 | Evidence of SiSiGe heterojunction roughness scattering | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | |||
207 | 2004 | Mechanically Strained Strained-Si NMOSFETs | CHEE-WEE LIU ; Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
208 | 2004 | Light emission from Al/HfO2/silicon diodes | Chen, T. C.; Lai, W. Z.; Liang, C. Y.; MIIN-JANG CHEN ; Lee, L. S.; CHEE-WEE LIU | Journal of Applied Physics | 10 | 10 | |
209 | 2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
210 | 2004 | MEXTRAM modeling of Si-SiGe HPTs | CHEE-WEE LIU ; Yuan, F.; Shi, J.-W.; Pei, Z.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
211 | 2003 | MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses | Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU | Semiconductor Device Research Symposium, 2003 International | 0 | 0 | |
212 | 2003 | Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes | Chen, Miin-Jang ; Chang, Jui-Fen; Yen, Jia-Liang; Tsai, Chen S.; Liang, Eih-Zhe; Lin, Ching-Fuh ; CHEE-WEE LIU | Journal of Applied Physics | 16 | 14 | |
213 | 2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | CHEE-WEE LIU ; Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
214 | 2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
215 | 2003 | Growth and electrical characteristics of liquid-phase deposited SiO<inf>2</inf> on Ge | CHEE-WEE LIU ; Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | |||
216 | 2003 | Strain-induced growth of SiO<inf>2</inf> dots by liquid phase deposition | CHEE-WEE LIU ; Liu, C.W.; Hsu, B.-C.; Chen, K.-F.; Lee, M.H.; Shie, C.-R.; Chen, P.-S.; CHEE-WEE LIU | Applied Physics Letters | |||
217 | 2003 | Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Yuan, F.; Hsu, B.-C.; CHEE-WEE LIU | Solid-State Electronics | |||
218 | 2003 | Reliability Improvement of Rapid Thermal Oxide Using Gas Switching | Lee, Min Hung; Yu, Cheng-Ya; Yuan, Fon; Chen, K.-F.; Lai, Chang-Chi; Liu, Chee Wee | IEEE Transactions on Semiconductor Manufacturing | 2 | 0 | |
219 | 2003 | Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method | CHING-FUH LIN ; Su, Ting-Wien; Chung, Peng-Fei; Liang, Eih-Zhe; MIIN-JANG CHEN ; CHEE-WEE LIU | Materials Chemistry and Physics | 4 | 3 | |
220 | 2003 | Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.; CHEE-WEE LIU | Applied Physics Letters | |||
221 | 2002 | Roughness-enhanced reliability of MOS tunneling diodes | Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W. ; CHEE-WEE LIU | IEEE Electron Device Letters | 6 | 7 | |
222 | 2002 | Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures | Feng, S.-W.; Cheng, Y.-C.; Chung, Y.-Y.; Liu, C.W.; Mao, M.-H.; Yang, C.-C.; Lin, Y.-S.; Ma, K.-J.; MING-HUA MAO ; CHIH-WEN LIU ; CHIH-CHUNG YANG ; CHEE-WEE LIU | Proceedings of SPIE-The International Society for Optical Engineering | 1 | 0 | |
223 | 2002 | Energy band structure of strained Si 1-xC x alloys on Si (001) substrate | CHEE-WEE LIU ; Chang, S.T.; Lin, C.Y.; CHEE-WEE LIU | Journal of Applied Physics | |||
224 | 2002 | Oxide roughness effect on tunneling current of MOS diodes | CHEE-WEE LIU ; Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
225 | 2002 | The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake | Lee, Min-Hung; Chen, Kuan-Fu; Lai, Chang-Chi; Liu, Chee Wee ; Pai, Woei-Wu ; Chen, Miin-Jang ; Lin, Ching-Fuh | Japanese Journal of Applied Physics | 10 | 10 | |
226 | 2002 | The band-edge light emission from the metal-oxide-silicon tunneling diode on (1 1 0) substrates | Chang, Shutong; Chen, Kuanfu; Shie, C. R.; CHEE-WEE LIU ; MIIN-JANG CHEN ; CHING-FUH LIN | Solid-State Electronics | |||
227 | 2001 | Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes | MIIN-JANG CHEN ; CHING-FUH LIN ; Lee, M. H.; Chang, S. T.; CHEE-WEE LIU | Applied Physics Letters | 10 | 10 | |
228 | 2001 | Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation | CHEE-WEE LIU ; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; MIIN-JANG CHEN ; CHING-FUH LIN | Applied Physics Letters | 8 | 8 | |
229 | 2001 | Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact | CHING-FUH LIN ; MIIN-JANG CHEN ; Chang, Shu-Wei; Chung, Peng-Fei; Liang, Eih-Zhe; Su, Ting-Wien; CHEE-WEE LIU | Applied Physics Letters | 4 | 3 | |
230 | 2001 | Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement | Lin, Ching-Fuh ; Chen, Miin-Jang ; Liang, Eih-Zhe; Liu, W. T.; CHEE-WEE LIU | Applied Physics Letters | 3 | 3 | |
231 | 2001 | A comprehensive study of inversion current in MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
232 | 2001 | A novel illuminator design in a rapid thermal processor | CHEE-WEE LIU ; Lee, M.H.; CHEE-WEE LIU | IEEE Transactions on Semiconductor Manufacturing | |||
233 | 2001 | An on-line fault estimation in distribution substations using improved cause-effect networks | CHEE-WEE LIU ; Chen, W.-H.; Liu, C.-W.; Tsai, M.-S.; CHEE-WEE LIU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | |||
234 | 2001 | Improved optimal aim strategy based multiple TCSC controllers for transient stability control of interconnected power system | CHEE-WEE LIU ; Yu, C.-S.; Liu, C.-W.; Jiang, J.-A.; CHEE-WEE LIU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | |||
235 | 2001 | Novel methods to incorporate deuterium in the MOS structures | CHEE-WEE LIU ; Lee, M.H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
236 | 2001 | Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; CHEE-WEE LIU | Applied Physics Letters | |||
237 | 2001 | Asymmetrical X-ray reflection of SiGeC/Si heterostructures | CHEE-WEE LIU ; Tseng, Y. D.; MING-YAU CHERN | Materials Chemistry and Physics | 0 | 0 | |
238 | 2001 | Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures | MIIN-JANG CHEN ; CHING-FUH LIN ; Liu, W. T.; Chang, S. T.; CHEE-WEE LIU | Journal of Applied Physics | 13 | 13 | |
239 | 2001 | A PMOS tunneling photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
240 | 2000 | Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates | CHEE-WEE LIU ; Lee, Min-Hung; Chang, Shu-Tong; MIIN-JANG CHEN ; CHING-FUH LIN | Japanese journal of applied physics | 2 | 1 | |
241 | 2000 | Electroluminescence at Si band gap energy based on metal–oxide–silicon structures | CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN ; Lee, M. H.; Lin, I. C. | Journal of Applied Physics | 41 | 0 | |
242 | 2000 | Infrared studies of laser induced oxide on (1 0 0) Si and SiGe layers | CHEE-WEE LIU ; Huang, Y.S.; Chen, C.Y.; Gurtler, S.; CHIH-CHUNG YANG ; Chang, Y.; Chen, L.P. | Materials Chemistry and Physics | 2 | 2 | |
243 | 2000 | Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes | CHEE-WEE LIU ; MIIN-JANG CHEN ; Lin, I. C.; Lee, M. H.; CHING-FUH LIN | Applied Physics Letters | 33 | 33 | |
244 | 2000 | Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Chang, S. T.; Liu, W. T.; MIIN-JANG CHEN ; CHING-FUH LIN | Applied Physics Letters | 23 | 20 | |
245 | 2000 | Formation of silicon surface gratings with high-pulse-energy ultraviolet laser | Chen, C.-Y.; Ma, K.-J.; Lin, Y.-S.; Liu, C.-W.; Hsu, C.-W.; Chao, C.-Y.; Gurtler, S.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Journal of Applied Physics | 3 | 3 | |
246 | 2000 | Infrared electroluminescence from metal-oxide-semiconductor structures on silicon | Lin, Ching-Fuh ; Liu, C. W.; Chen, Miin-Jang ; Lee, M. H.; CHEE-WEE LIU | Journal of Physics: Condensed Matter | 7 | 7 | |
247 | 2000 | Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes | CHEE-WEE LIU ; MIN-HUNG LEE ; MIIN-JANG CHEN ; CHING-FUH LIN ; MING-YAU CHERN | IEEE Electron Device Letters | 39 | 34 | |
248 | 2000 | Novel photodetector using MOS tunneling structures | CHEE-WEE LIU ; Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
249 | 2000 | Analytic modeling of the subthreshold behavior in MOSFET | CHEE-WEE LIU ; Liu, C.W.; Hsieh, T.X.; CHEE-WEE LIU | Solid-State Electronics | |||
250 | 2000 | Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Chen, M.-J.; Lin, I.C.; Lin, C.-F.; CHEE-WEE LIU | Applied Physics Letters | |||
251 | 1999 | Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Tseng, Y.D.; Huang, Y.S.; CHEE-WEE LIU | Applied Physics Letters | |||
252 | 1999 | Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition | Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; MING-YAU CHERN ; CHEE-WEE LIU | Journal of Applied Physics | 13 | 15 | |
253 | 1998 | The design of rapid thermal process for large diameter applications [semiconductor wafer processing] | Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Semiconductor Manufacturing Technology Workshop | 0 | 0 | |
254 | 1998 | Valence band properties of relaxed Ge1-xCx alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
255 | 1998 | Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
256 | 1997 | Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | |||
257 | 1997 | Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
258 | 1997 | Hole effective masses in relaxed Si<inf>1-x</inf>C<inf>x</inf> and Si<inf>1-y</inf>Ge<inf>y</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | |||
259 | 1997 | Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
260 | 1997 | Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Journal of Applied Physics | |||
261 | 1997 | Direct writing of silicon gratings with highly coherent ultraviolet laser | Chao, C.-Y.; Chen, C.-Y.; CHEE-WEE LIU ; Chang, Y.; CHIH-CHUNG YANG | Applied Physics Letters | 13 | 12 | |
262 | 1997 | Direct writing of silicon gratings with highly coherent ultraviolet laser | CHEE-WEE LIU ; Chao, C.-Y.; Chen, C.-Y.; Liu, C.-W.; Chang, Y.; Yang, C.C.; CHEE-WEE LIU | Applied Physics Letters | |||
263 | 1996 | Si/Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> /Si heterojunction bipolar transistors | CHEE-WEE LIU ; Lanzerotti, L.D.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Watanabe, J.K.; Theodore, N.D.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
264 | 1996 | Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates | CHEE-WEE LIU ; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU | Journal of Applied Physics | |||
265 | 1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | CHEE-WEE LIU ; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
266 | 1995 | Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100) | CHEE-WEE LIU ; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
267 | 1994 | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Applied Physics Letters | |||
268 | 1993 | Alloy scattering limited transport of two-dimensional carriers in strained Si<inf>1-x</inf>Ge<inf>x</inf> quantum wells | CHEE-WEE LIU ; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | |||
269 | 1993 | Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition | CHEE-WEE LIU ; Schwartz, P.V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | |||
270 | 1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | CHEE-WEE LIU ; Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | |||
271 | 1993 | Symmetric Si/Si<inf>1-x</inf>Ge<inf>x</inf> electron resonant tunneling diodes with an anomalous temperature behavior | Matutinović-Krstelj Ž.; CHEE-WEE LIU ; Xiao, X.; Sturm, J.C. | Applied Physics Letters | |||
272 | 1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | |||
273 | 1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
274 | 1987 | Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source | Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 9 |