| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2008 | 2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction | M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO | J. Appl. Phys | | | |
2 | 2008 | 2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions | Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 22 | 19 | |
3 | 2005 | Abnormal hole mobility of biaxial strained Si | MING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU | Journal of Applied Physics | 19 | 20 | |
4 | 2017 | The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect | Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO | Vacuum | | | |
5 | 2017 | The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effect | M. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. Yao | Vacuum | | | |
6 | 2012 | Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs | Liao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H. | IEEE Transactions on Electron Devices | 7 | 6 | |
7 | 2023 | The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications | Lin, Hong Yi; Basu, Nilabh; Lee, Min Hung; Chen, Sheng Chi; MING-HAN LIAO | Coatings | 0 | 0 | |
8 | 1996 | Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method | Ma, C.-C.; CHIEN-CHING MA ; MING-HAN LIAO | Journal of Pressure Vessel Technology, Transactions of the ASME | 6 | 6 | |
9 | 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO | Journal of Applied Physics | | | |
10 | 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO | J. Appl. Phys | | | |
11 | 2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
12 | 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU | Applied Physics Letters | 13 | 12 | |
13 | 2006 | Buckling characteristics of SiGe layers on viscous oxide | Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU | Journal of Applied Physics | 3 | 3 | |
14 | 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | | | |
15 | 2007 | Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition | Chen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee | IEEE Transactions on Electron Devices | 33 | 30 | |
16 | 2019 | Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering | Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO | Journal of Alloys and Compounds | | | |
17 | 2016 | Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors | Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO | International Journal of Nanotechnology | | | |
18 | 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | | | |
19 | 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators | M. H.Liao ; C. Lien | AIP Advances | | | |
20 | 2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | | 1 | |
21 | 2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | | | |
22 | 2013 | The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
23 | 2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | | 6 | |
24 | 2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | | | |
25 | 2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
26 | 2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 9 | 9 | |
27 | 2018 | The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors | C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
28 | 2022 | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
29 | 2022 | The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via | HSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | Applied Physics Letters | 3 | 3 | |
30 | 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong | AIP Advances | 3 | 2 | |
31 | 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | | | |
32 | 2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
33 | 2015 | The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor | M. H.Liao ; S.-C. Huang | AIP Advances | | | |
34 | 2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | | | |
35 | 2009 | The Dependence of the Performance of Strained NMOSFETs on Channel Width | Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO | IEEE Trans. on Electron Devices | | | |
36 | 2015 | The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
37 | 2019 | The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators | Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | | | |
38 | 2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
39 | 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. | M. H.Liao ; H.-W. Hsuh; C.-C. Lee | Vacuum | | | |
40 | 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | | | |
41 | 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | Huang L.-T.; Chang M.-L.; Huang J.-J.; Kuo C.-L.; Lin H.-C.; Liao M.-H.; Lee M.-H.; HSIN-CHIH LIN ; MING-HAN LIAO ; CHIN-LUNG KUO ; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
42 | 2012 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | M. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen | Journal of Physics D: Applied Physics | | | |
43 | 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | | | |
44 | 2005 | Electroluminescence from metal/oxide/strained-Si tunneling diodes | MING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU | Applied Physics Letters | 64 | 42 | |
45 | 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO | IEEE Electron Device Letters | | | |
46 | 2006 | Electroluminescence from the Ge quantum dot MOS tunneling diodes | MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | 30 | 29 | |
47 | 2013 | Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance | Liao, M.-H.; Chang, L.C.; MING-HAN LIAO | Applied Physics Letters | | | |
48 | 2013 | Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process | Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO | Journal of Physics D: Applied Physics | | | |
49 | 2013 | Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process | M. H.Liao ; P.-G. Chen | Journal of Physics D: Applied Physics | | | |
50 | 2013 | Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistors | Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO | AIP Advances | | | |
51 | 2019 | Ferro-electric HfZrO2 FETs for steep switch onset | K.-T. Chen; MING-HAN LIAO | Microelectronic Engineering | | | |
52 | 2018 | Ferroelectric HfZrO&#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 15 | 14 | |
53 | 2020 | Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training | Hsiang K.-Y; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
54 | 2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | | | |
55 | 2018 | Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | K.-T. Chen; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | | | |
56 | 2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
57 | 2016 | Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships | M. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
58 | 2016 | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO | Thin Solid Films | | | |
59 | 2011 | High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect | Han Liao, M.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | | | |
60 | 2013 | Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | M. H.Liao ; C.-H. Chen | AIP Advances | | | |
61 | 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | | | |
62 | 2014 | The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy | Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. | International Journal of Automation and Smart Technology | 0 | 0 | |
63 | 2021 | In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering | Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO | Nanomaterials | | | |
64 | 2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | | | |
65 | 2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | | | |
66 | 2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | 29 | 31 | |
67 | 2006 | Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes | M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
68 | 2007 | The intermixing and strain effects on electroluminescence of SiGe dots | MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU | Journal of Applied Physics | 29 | 29 | |
69 | 2020 | The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors | Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | 3 | |
70 | 2022 | The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure | Chen, K. C.; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 4 | 5 | |
71 | 2011 | The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H.; Chen, C.H.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | | | |
72 | 2017 | The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO | AIP Advances | | | |
73 | 2017 | The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages | Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO | AIP Advances | | | |
74 | 2017 | The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | AIP Advances | | | |
75 | 2016 | The investigation of the diameter dimension effect on the Si nano-tube transistors | M. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang | AIP Advances | 0 | | |
76 | 2009 | An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures | M. H. Liao; MING-HAN LIAO | Applied Physics Letters | | | |
77 | 2009 | Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization | M. H. Liao; MING-HAN LIAO | J. Appl. Phys | | | |
78 | 2014 | Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors | M. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang | Optics Express | | | |
79 | 2018 | Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | | | |
80 | 2014 | Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | | | |
81 | 2021 | Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices | Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO | Coatings | | | |
82 | 2022 | Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures | Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S. | AIP Advances | 1 | 0 | |
83 | 2015 | A non-linear analytic stress model for the analysis on the stress interaction between TSVs | Liao, M.-H. ; Kao, S.-C.; Huang, S.-J. | International Journal of Automation and Smart Technology | 0 | 0 | |
84 | 2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | | | |
85 | 2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | | | |
86 | 2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | | | |
87 | 2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H. ; Chen, C.-H.; Kao, S.-C. | International Journal of Heat and Mass Transfer | 1 | 1 | |
88 | 2012 | A novel stress design for the type-II hetero-junction solar cell with superior performance | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 6 | 4 | |
89 | 2012 | A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation | M. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng | Journal of Physics D: Applied Physics | | | |
90 | 2008 | Optimal stress design in p-MOSFET with superior performance | Liao, M.H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
91 | 2013 | Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN film | Chen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | | | |
92 | 2019 | Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO | Journal of Alloys and Compounds | | | |
93 | 2019 | Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO | Journal of Alloys and Compounds | | | |
94 | 2020 | p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering | Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO ; TUNG-HAN CHUANG | Ceramics International | | 10 | |
95 | 2021 | Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation | Lee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO | Applied Physics Express | | | |
96 | 2017 | Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures | Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO | Applied Physics Letters | | | |
97 | 2017 | Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures | M. H.Liao ; H.-I. Huang; C.-C. Chuang | Applied Physics Letters | | | |
98 | 2016 | PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenografts | Chiu C.-H.; Li I.-H.; Weng S.-J.; Huang Y.-S.; Wu S.-C.; Chou T.-K.; Huang W.-S.; Liao M.-H.; Shiue C.-Y.; Cheng C.-Y.; SHINN-CHIH WU ; Liao, M.-H. | Cell Transplantation | 7 | 6 | |
99 | 2018 | Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors | M. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang | IEEE Transaction on Nanotech | | | |
100 | 2018 | Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors | Luong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; CHING-RAY CHANG | IEEE Transactions on Nanotechnology | 21 | 21 | |
101 | 2013 | The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits | Liao, M.H.; MING-HAN LIAO | Journal of Applied Physics | | | |
102 | 2023 | Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals | Tsai, Y. T.; Basu, Nilabh; Chen, T.-W.; Chan, Y. C.; Lin, H.-Y.; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 0 | 0 | |
103 | 2012 | The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction | Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH | Journal of Applied Physics | 14 | 8 | |
104 | 2013 | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang | IEEE Transaction on Electron Devices | 1 | | |
105 | 2013 | Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures | Liao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; JYH-JONE LEE | International Journal of Automation and Smart Technology | 0 | 0 | |
106 | 2016 | Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors | Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO | Thin Solid Films | | | |
107 | 2008 | SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping | Chu-Hsuan Lin; MING-HAN LIAO | IEEE Nanotechnology | | | |
108 | 2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Transactions on Nanotechnology | 6 | 6 | |
109 | 2016 | Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack | Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H. | Japanese Journal of Applied Physics | 31 | 23 | |
110 | 2013 | The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits | Liao, M.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | | | |
111 | 2016 | STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors | M. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
112 | 2010 | Strain engineering of nanoscale Si MOS devices | Huang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO | Thin Solid Films | | | |
113 | 2010 | Strain Engineering of Nanoscale Strained Si MOS Devices | B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO | Thin Solid Films | | | |
114 | 2006 | strained Pt Schottky diodes on n-type Si and Ge | M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
115 | 2013 | Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study | M. H.Liao | Thin Solid Films | | | |
116 | 2008 | Superior n-MOSFET performance by optimal stress design | Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
117 | 2018 | Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions | M. H.Liao ; H. Sun; S.-C. Chenh; P.-C. Ling; S.-M. Song | Journal of Physics D: Applied Physics | | | |
118 | 2017 | The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | IEEE Transactions on Electron Devices | | | |
119 | 2017 | Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors from 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling | Liao, M.-H. ; Hsieh, C.-P.; Lee, C.-C. | IEEE Transactions on Electron Devices | 14 | 15 | |
120 | 2012 | The systematic study and simulation modeling on nano-level dislocation edge stress effects | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 10 | 5 | |
121 | 2009 | The dependence of the performance of strained NMOSFETs on channel width | Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
122 | 2018 | Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices | M. H.Liao ; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee | AIP Advances | | | |
123 | 2018 | Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devices | Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO | AIP Advances | | | |