第 1 到 207 筆結果,共 207 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2023 | The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications | Lin, Hong Yi; Basu, Nilabh; Lee, Min Hung; Chen, Sheng Chi; MING-HAN LIAO | Coatings | 0 | 0 | |
2 | 2023 | Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals | Tsai, Y. T.; Basu, Nilabh; Chen, T.-W.; Chan, Y. C.; Lin, H.-Y.; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 0 | 0 | |
3 | 2023 | Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure | Komura, Yusuke; Miyata, Shoki; Okamoto, Yuki; Tamatsukuri, Yuki; Inoue, Hiroki; Saito, Toshihiko; Kozuma, Munehiro; Kobayashi, Hidetomo; Onuki, Tatsuya; Yanagisawa, Yuichi; Takeuchi, Toshihiko; Okazaki, Yutaka; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Yamane, Yasumasa; Ikeda, Makoto; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
4 | 2023 | 4-Layer Wafer on Wafer Stacking Demonstration with Face to Face/Face to Back Stacked Flexibility Using Hybrid Bond/TSV-Middle for Various 3D Integration | Lu, C. L.; Chuang, C. H.; Huang, C. H.; Lin, S. C.; Chang, Y. H.; Lai, W. Y.; Chiu, M. H.; MING-HAN LIAO ; Chang, S. Z. | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
5 | 2022 | The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via | HSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | Applied Physics Letters | 3 | 3 | |
6 | 2022 | The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure | Chen, K. C.; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 4 | 5 | |
7 | 2022 | Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures | Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S. | AIP Advances | 1 | 0 | |
8 | 2022 | Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display | Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen | Digest of Technical Papers - SID International Symposium | 4 | 0 | |
9 | 2022 | 1.5-inch, 3207-ppi Side-by-Side OLED Display Capable of 32-Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography | Kozuma, Munehiro; Okamoto, Yuki; Ito, Minato; Lnoue, Hiroki; Saito, Toshihiko; Komura, Yusuke; Miyata, Shoki; Toyotaka, Kouhei; Matsuzaki, Takanori; Onuki, Tatsuya; Kobayashi, Hidetomo; Sugaya, Kentaro; Fujie, Takahiro; Okazaki, Yutaka; Hodo, Ryota; Yanagisawa, Yuichi; Wakuda, Masahiro; Murakawa, Tsutomu; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Fukuzaki, Shinya; Aoyama, Tomoya; Kimura, Hajime; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei | Digest of Technical Papers - SID International Symposium | 6 | 0 | |
10 | 2022 | Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologies | Liao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO | Proceedings - Electronic Components and Technology Conference | 3 | 0 | |
11 | 2022 | Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithography | Saito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei | Digest of Technical Papers - SID International Symposium | 5 | 0 | |
12 | 2022 | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO | IEEE Transactions on Electron Devices | |||
13 | 2021 | Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation | Lee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO | Applied Physics Express | |||
14 | 2021 | Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices | Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO | Coatings | |||
15 | 2021 | In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering | Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO | Nanomaterials | |||
16 | 2020 | The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology | Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; C. ROBERT KAO | Proceedings - Electronic Components and Technology Conference | 4 | 0 | |
17 | 2020 | Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory | Chen, K.-T. et al.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | |||
18 | 2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 1 | ||
19 | 2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | 6 | ||
20 | 2020 | Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training | Hsiang K.-Y; MING-HAN LIAO | IEEE Transactions on Electron Devices | |||
21 | 2020 | p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering | Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO ; TUNG-HAN CHUANG | Ceramics International | 10 | ||
22 | 2020 | The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs | Lu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO | Technical Digest - International Electron Devices Meeting, IEDM | |||
23 | 2020 | The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors | Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 3 | ||
24 | 2019 | Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs | Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 12 | 0 | |
25 | 2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | |||
26 | 2019 | The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators | Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | |||
27 | 2019 | Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO | Journal of Alloys and Compounds | |||
28 | 2019 | Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering | Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO | Journal of Alloys and Compounds | |||
29 | 2019 | Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO | Journal of Alloys and Compounds | |||
30 | 2019 | Ferro-electric HfZrO2 FETs for steep switch onset | K.-T. Chen; MING-HAN LIAO | Microelectronic Engineering | |||
31 | 2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | |||
32 | 2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | |||
33 | 2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | |||
34 | 2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | |||
35 | 2018 | Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications | Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S. | 2018 IEEE Electron Devices Technology and Manufacturing Conference | 2 | 0 | |
36 | 2018 | Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMT | Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H. | 2018 7th International Symposium on Next-Generation Electronics | 0 | 0 | |
37 | 2018 | Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices | M. H.Liao ; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee | AIP Advances | |||
38 | 2018 | Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions | M. H.Liao ; H. Sun; S.-C. Chenh; P.-C. Ling; S.-M. Song | Journal of Physics D: Applied Physics | |||
39 | 2018 | Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors | M. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang | IEEE Transaction on Nanotech | |||
40 | 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
41 | 2018 | Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors | Luong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; CHING-RAY CHANG | IEEE Transactions on Nanotechnology | 21 | 21 | |
42 | 2018 | Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | |||
43 | 2018 | Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devices | Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO | AIP Advances | |||
44 | 2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 9 | 9 | |
45 | 2018 | The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors | C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO | IEEE Transactions on Electron Devices | |||
46 | 2018 | Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | K.-T. Chen; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | |||
47 | 2018 | Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100) | MING-HAN LIAO | Thin Solid Films | 0 | 0 | |
48 | 2018 | Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles | M. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee | 2018 International Conference on Solid State Devices and Materials | |||
49 | 2018 | Ferroelectric HfZrO&#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 15 | 14 | |
50 | 2017 | In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
51 | 2017 | Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures | M. H.Liao ; H.-I. Huang; C.-C. Chuang | Applied Physics Letters | |||
52 | 2017 | The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | IEEE Transactions on Electron Devices | |||
53 | 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. | M. H.Liao ; H.-W. Hsuh; C.-C. Lee | Vacuum | |||
54 | 2017 | Ferroelectric Al:HfO2 Negative Capacitance FETs | M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu | International Electron Devices Meeting | |||
55 | 2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | |||
56 | 2017 | The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | AIP Advances | |||
57 | 2017 | The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effect | M. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. Yao | Vacuum | |||
58 | 2017 | Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures | Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO | Applied Physics Letters | |||
59 | 2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
60 | 2017 | Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors from 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling | Liao, M.-H. ; Hsieh, C.-P.; Lee, C.-C. | IEEE Transactions on Electron Devices | 14 | 15 | |
61 | 2017 | The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO | AIP Advances | |||
62 | 2017 | The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect | Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO | Vacuum | |||
63 | 2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
64 | 2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 91 | 0 | |
65 | 2017 | The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages | Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO | AIP Advances | |||
66 | 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | |||
67 | 2016 | MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same | M.H.Liao ; M.Hongh | ||||
68 | 2016 | STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors | M. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | |||
69 | 2016 | MAGNET IC CAPACIT OR STRUCT URES | M.H.Liao ; C.Hsieh; C.Chen | ||||
70 | 2016 | Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack | Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H. | Japanese Journal of Applied Physics | 31 | 23 | |
71 | 2016 | Narrow channel width effect modificati on in a shallow trench isolation device | M. H.Liao ; T.L. Lee | ||||
72 | 2016 | Isolation Region Implant and Structure | M. H.Liao ; T.L. Lee | ||||
73 | 2016 | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO | Thin Solid Films | |||
74 | 2016 | STI stress modulation with additional implantati on and natural pad sin mask | M. H.Liao ; T.L. Lee; L.-Y.Yeh; M.S.Liang | ||||
75 | 2016 | PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenografts | Chiu C.-H.; Li I.-H.; Weng S.-J.; Huang Y.-S.; Wu S.-C.; Chou T.-K.; Huang W.-S.; Liao M.-H.; Shiue C.-Y.; Cheng C.-Y.; SHINN-CHIH WU ; Liao, M.-H. | Cell Transplantation | 7 | 6 | |
76 | 2016 | The investigation of the diameter dimension effect on the Si nano-tube transistors | M. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang | AIP Advances | 0 | ||
77 | 2016 | SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION | M. H.Liao | ||||
78 | 2016 | Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors | Lee, C.-C.; Hsieh, C.-P.; Liao, M.-H. ; Cheng, S.-W.; Guo, Y.-H. | 2014 IEEE International Nanoelectronics Conference | 1 | 0 | |
79 | 2016 | Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships | M. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | |||
80 | 2016 | Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors | Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO | Thin Solid Films | |||
81 | 2016 | Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors | Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO | International Journal of Nanotechnology | |||
82 | 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators | M. H.Liao ; C. Lien | AIP Advances | |||
83 | 2015 | 利用拉曼光譜檢測半導體缺陷技術 | 廖洺漢 ; 陳畤華; 謝卓帆 | ||||
84 | 2015 | The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor | M. H.Liao ; S.-C. Huang | AIP Advances | |||
85 | 2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | |||
86 | 2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | |||
87 | 2015 | The demonstration of the novel nanotube Si device with the promising device performance behavior | M. H.Liao ; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
88 | 2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | |||
89 | 2015 | Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)] | Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C. | Japanese Journal of Applied Physics | 0 | 0 | |
90 | 2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free Strategies | M. H. Lee; MING-HAN LIAO | IEEE Electron Device Meeting (IEDM) 2015 | |||
91 | 2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
92 | 2015 | A non-linear analytic stress model for the analysis on the stress interaction between TSVs | Liao, M.-H. ; Kao, S.-C.; Huang, S.-J. | International Journal of Automation and Smart Technology | 0 | 0 | |
93 | 2015 | Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) | Liao, M.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
94 | 2015 | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
95 | 2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF | M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen | IEEE Electron Device Meeting | |||
96 | 2015 | The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate | M. H.Liao ; S.-C. Huangn; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
97 | 2015 | Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies | Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C. | International Electron Devices Meeting | 87 | 0 | |
98 | 2015 | ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process | M. H.Liao ; P.-G. Chen; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
99 | 2015 | Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis | M. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu | IEEE Electron Device Meeting | 233 | 0 | |
100 | 2015 | The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs | M. H.Liao ; P.-G. Chen | Applied Physics Letters | |||
101 | 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | |||
102 | 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | |||
103 | 2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 4 | 0 | |
104 | 2014 | The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO | 2014 Symposium on VLSI Technology (VLSI-technology) | |||
105 | 2014 | Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors | M. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang | Optics Express | |||
106 | 2014 | Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | |||
107 | 2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
108 | 2014 | Analyzing Si-SiGe thin-film solar cell by simulation and calculation | Hsieh, C.-F.; Li, Y.-T.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. | 2014 IEEE 40th Photovoltaic Specialist Conference | 0 | 0 | |
109 | 2014 | Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopy | Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. | Procedia Engineering | 0 | 0 | |
110 | 2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | |||
111 | 2014 | The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy | Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. | International Journal of Automation and Smart Technology | 0 | 0 | |
112 | 2014 | Periodic nanostructured thin-film solar cells | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. | Advanced Materials Research | 0 | 0 | |
113 | 2014 | Stress and curvature of periodic trench structures on Sapphire substrate with GaN film | Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. | Procedia Engineering | 0 | 0 | |
114 | 2014 | High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M. | ECS Transactions | 1 | 0 | |
115 | 2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H. ; Chen, C.-H.; Kao, S.-C. | International Journal of Heat and Mass Transfer | 1 | 1 | |
116 | 2013 | Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors | Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C. | Japanese Journal of Applied Physics | 0 | 1 | |
117 | 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | Liao, M.-H. ; Chen, C.-H.; Lee, J.J.; Chen, K.C.; JYH-JONE LEE | 2013 e-Manufacturing and Design Collaboration Symposium | 0 | 0 | |
118 | 2013 | Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process | M. H.Liao ; P.-G. Chen | Journal of Physics D: Applied Physics | |||
119 | 2013 | Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistors | Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO | AIP Advances | |||
120 | 2013 | Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process | Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO | Journal of Physics D: Applied Physics | |||
121 | 2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | |||
122 | 2013 | The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits | Liao, M.H.; MING-HAN LIAO | Journal of Applied Physics | |||
123 | 2013 | The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits | Liao, M.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | |||
124 | 2013 | Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance | Liao, M.-H.; Chang, L.C.; MING-HAN LIAO | Applied Physics Letters | |||
125 | 2013 | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang | IEEE Transaction on Electron Devices | 1 | ||
126 | 2013 | Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures | Liao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; JYH-JONE LEE | International Journal of Automation and Smart Technology | 0 | 0 | |
127 | 2013 | The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual technique | Liao, M.-H. ; Chen, C.-H.; Kao, S.-C.; Huang, M.-C. | 2013 e-Manufacturing and Design Collaboration Symposium | 0 | 0 | |
128 | 2013 | Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | M. H.Liao ; C.-H. Chen | AIP Advances | |||
129 | 2013 | Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study | M. H.Liao | Thin Solid Films | |||
130 | 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | Huang L.-T.; Chang M.-L.; Huang J.-J.; Kuo C.-L.; Lin H.-C.; Liao M.-H.; Lee M.-H.; HSIN-CHIH LIN ; MING-HAN LIAO ; CHIN-LUNG KUO ; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
131 | 2013 | Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN film | Chen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | |||
132 | 2013 | CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique | M. H.Liao ; C.-H. Chen; S.-C. Kao; M.-C. Huang | e-Manufacturing & Design Collaboration Symposium | |||
133 | 2013 | Nonlinear analytic model for the strain field induced by thermal copper filled TSVs | M. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang | e-Manufacturing & Design Collaboration Symposium | |||
134 | 2013 | The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs | M. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong | Asia-Pacific Radio Science Conference | |||
135 | 2013 | Solar cell composed of periodic nano-structure and SiGe/Si thin film | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. | Conference Record of the IEEE Photovoltaic Specialists Conference | 0 | 0 | |
136 | 2013 | The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
137 | 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong | AIP Advances | 3 | 2 | |
138 | 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | |||
139 | 2012 | The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction | Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH | Journal of Applied Physics | 14 | 8 | |
140 | 2012 | A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | |||
141 | 2012 | The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | |||
142 | 2012 | SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | |||
143 | 2012 | The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | |||
144 | 2012 | A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | |||
145 | 2012 | Nano-textured photonic crystal light-emitting diodes and solar cells | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | |||
146 | 2012 | Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment | C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO | 第十六屆非破壞檢測技術研討會暨年會論文競賽 | |||
147 | 2012 | Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs | Liao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H. | IEEE Transactions on Electron Devices | 7 | 6 | |
148 | 2012 | The optimization of SiGe hetero-structure thin-film solar cell by the theoretical calculation and quantitative analysis | Liao, M.-H. ; Chen, Y.-Y.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Hsieh, C.-F. | 2012 International Silicon-Germanium Technology and Device Meeting | 0 | 0 | |
149 | 2012 | Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | |||
150 | 2012 | Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | |||
151 | 2012 | Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | |||
152 | 2012 | A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation | M. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng | Journal of Physics D: Applied Physics | |||
153 | 2012 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | M. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen | Journal of Physics D: Applied Physics | |||
154 | 2012 | The systematic study and simulation modeling on nano-level dislocation edge stress effects | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 10 | 5 | |
155 | 2012 | A novel stress design for the type-II hetero-junction solar cell with superior performance | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 6 | 4 | |
156 | 2011 | Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis | Chang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO | Thin Solid Films | |||
157 | 2011 | The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H.; Chen, C.H.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | |||
158 | 2011 | Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization | Liao, M.H. ; Chang, L.C. | 2011 International Semiconductor Device Research Symposium | 0 | 0 | |
159 | 2011 | High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect | Han Liao, M.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | |||
160 | 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | |||
161 | 2011 | An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures | M.-H. Liao; L. C. Chang; MING-HAN LIAO | 2011 International Semiconductor Device Research Symposium (ISDRS) | |||
162 | 2010 | Strain engineering of nanoscale Si MOS devices | Huang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO | Thin Solid Films | |||
163 | 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO | J. Appl. Phys | |||
164 | 2010 | High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect | Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO | IEEE Photovoltaic Specialists Conference | |||
165 | 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO | Journal of Applied Physics | |||
166 | 2010 | The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T. | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
167 | 2010 | Strain Engineering of Nanoscale Strained Si MOS Devices | B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO | Thin Solid Films | |||
168 | 2009 | The Dependence of the Performance of Strained NMOSFETs on Channel Width | Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO | IEEE Trans. on Electron Devices | |||
169 | 2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | |||
170 | 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2 | 0 | |
171 | 2009 | Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization | M. H. Liao; MING-HAN LIAO | J. Appl. Phys | |||
172 | 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | |||
173 | 2009 | The dependence of the performance of strained NMOSFETs on channel width | Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
174 | 2009 | An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures | M. H. Liao; MING-HAN LIAO | Applied Physics Letters | |||
175 | 2009 | An investigation about the limitation of strained-Si technology | Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO | International Symposium on VLSI Technology, Systems, and Applications | |||
176 | 2008 | 2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions | Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 22 | 19 | |
177 | 2008 | Superior n-MOSFET performance by optimal stress design | Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
178 | 2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Transactions on Nanotechnology | 6 | 6 | |
179 | 2008 | 2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction | M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO | J. Appl. Phys | |||
180 | 2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
181 | 2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
182 | 2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
183 | 2008 | SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping | Chu-Hsuan Lin; MING-HAN LIAO | IEEE Nanotechnology | |||
184 | 2008 | Optimal stress design in p-MOSFET with superior performance | Liao, M.H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | |||
185 | 2007 | Superior n-MOSFET performance by optimal stress design | Yang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU | 2007 International Semiconductor Device Research Symposium | 1 | 0 | |
186 | 2007 | Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition | Chen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee | IEEE Transactions on Electron Devices | 33 | 30 | |
187 | 2007 | The intermixing and strain effects on electroluminescence of SiGe dots | MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU | Journal of Applied Physics | 29 | 29 | |
188 | 2007 | Electrically pumped Ge laser at room temperature | Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU | International Electron Devices Meeting | 9 | 0 | |
189 | 2007 | Electroluminescence from strained SiGe quantum dot light-emitting diodes | Cheng, T.-H.; Liao, M.H. ; CHEE-WEE LIU | 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
190 | 2007 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
191 | 2006 | Buckling characteristics of SiGe layers on viscous oxide | Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU | Journal of Applied Physics | 3 | 3 | |
192 | 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO | IEEE Electron Device Letters | |||
193 | 2006 | strained Pt Schottky diodes on n-type Si and Ge | M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | |||
194 | 2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | ||
195 | 2006 | The process and optoelectronic characterization of Ge-on-insulator | Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
196 | 2006 | Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes | M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | |||
197 | 2006 | Electroluminescence from the Ge quantum dot MOS tunneling diodes | MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | 30 | 29 | |
198 | 2006 | Promising a-Si:H TFTs with high mechanical reliability for flexible display | Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H. | International Electron Devices Meeting | 11 | 0 | |
199 | 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | Liao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | ||
200 | 2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | 29 | 31 | |
201 | 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU | Applied Physics Letters | 13 | 12 | |
202 | 2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | ||
203 | 2005 | Electroluminescence from metal/oxide/strained-Si tunneling diodes | MING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU | Applied Physics Letters | 64 | 42 | |
204 | 2005 | Abnormal hole mobility of biaxial strained Si | MING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU | Journal of Applied Physics | 19 | 20 | |
205 | 2005 | 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features | Liao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W. | International Electron Devices Meeting | 2 | ||
206 | 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
207 | 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 |