第 1 到 168 筆結果,共 168 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
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1 | 2023 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Chen, Yu Rui; Liu, Yi Chun; Zhao, Zefu; Hsieh, Wan Hsuan; Lee, Jia Yang; Tu, Chien Te; Huang, Bo Wei; Wang, Jer Fu; Chueh, Shee Jier; Xing, Yifan; Chen, Guan Hua; Chou, Hung Chun; Woo, Dong Soo; Lee, M. H.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2 | 2023 | Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2P<inf>r</inf>= 84 μC/cm<sup>2</sup>and Endurance > 1E11 | Zhao, Zefu; Chen, Yu Rui; Chen, Yun Wen; Hsieh, Wan Hsuan; Wang, Jer Fu; Lee, Jia Yang; Xing, Yifan; Chen, Guan Hua; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
3 | 2023 | First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels | Tu, Chien Te; Hsieh, Wan Hsuan; Chen, Yu Rui; Huang, Bo Wei; Liao, Yu Tsung; WEI-JEN CHEN; Liu, Yi Chun; Cheng, Chun Yi; Chou, Hung Chun; Lu, Hao Yi; Hsin, Cheng Hsien; He, Geng Min; Woo, Dong Soo; Chueh, Shee Jier; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
4 | 2023 | First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff<-7μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C | Chiu, Jih Chao; Sarkar, Eknath; Liu, Yuan Ming; Chen, Yu Ciao; Fan, Yu Cheng; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
5 | 2023 | Extremely High-κ Hf<inf>0.2</inf>Zr<inf>0.8</inf>O<inf>2</inf>Gate Stacks Integrated into Ge<inf>0.95</inf>Si<inf>0.05</inf>Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at V<inf>OV</inf>=V<inf>DS</inf>=0.5V | Liu, Yi Chun; Chen, Yu Rui; Chen, Yun Wen; Lin, Hsin Cheng; Hsieh, Wan Hsuan; Tu, Chien Te; Huang, Bo Wei; WEI-JEN CHEN; Cheng, Chun Yi; Chueh, Shee Jier; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
6 | 2022 | First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation | Tu, Chien Te; Liu, Yi Chun; Huang, Bo Wei; Chen, Yu Rui; Hsieh, Wan Hsuan; Tsai, Chung En; Chueh, Shee Jier; Cheng, Chun Yi; Ma, Yichen; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 1 | 0 | |
7 | 2022 | RF Performance Optimization of Stacked Si Nanosheet nFETs | Lin H.-C; Chou T; Chiu K.-Y; Chung C.-C; Tsen C.-J; CHEE-WEE LIU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 2 | 0 | |
8 | 2022 | Cell Stability and Write Improvement of 2T (Footprint) Stacked SRAM | Chou T; Chung C.-C; Lin H.-C; CHEE-WEE LIU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 0 | 0 | |
9 | 2022 | 6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching | Cheng C.-Y; Hsieh W.-H; Huang B.-W; Liu Y.-C; Tu C.-T; Tsai C.-E; Chueh S.-J; Chen G.-H; CHEE-WEE LIU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 1 | 0 | |
10 | 2021 | Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation | Chen W.-J; Tsou Y.-J; Shih H.-C; Liu P.-C; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | |||
11 | 2021 | Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability | Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; CHEE-WEE LIU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | |||
12 | 2021 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching | Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
13 | 2021 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | ||
14 | 2020 | Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2 | Fan S.-T; Chen Y.-W; Chen P.-S; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | |||
15 | 2020 | Infrared Response of Stacked GeSn Transistors | Liu, H.-H.; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | |||
16 | 2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
17 | 2020 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels | Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
18 | 2020 | Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers | Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; CHEE-WEE LIU | Device Research Conference - Conference Digest, DRC | |||
19 | 2020 | Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping | Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
20 | 2020 | Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry | Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
21 | 2020 | 600 meV Effective Work Function Tuning by Sputtered WNxFilms | Tsai, C.-E.; Huang, C.-H.; Chen, Y.-R.; Tu, C.-T.; Huang, Y.-S.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | 0 | 0 | |
22 | 2019 | Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs | Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 12 | 0 | |
23 | 2019 | Record Low Contact Resistivity (4.4¡?10<sup>-10</sup> £[-cm<sup>2</sup>) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga | Lu, F.-L.; Tsai, C.-E.; Huang, C.-H.; Ye, H.-Y.; Lin, S.-Y.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
24 | 2019 | Ni, Pt, and Ti stanogermanide formation on Ge<inf>0.92</inf>Sn<inf>0.08</inf> | Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-V.; Lu, F.-L.; Liu, C.W.; Holmes, J.D.; Duffy, R.; CHEE-WEE LIU | 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 | |||
25 | 2019 | Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7 | Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Tsou, Y.-J.; Liu, Y.-C.; Tu, C.-T.; CHEE-WEE LIU | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | |||
26 | 2019 | Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs | Lee, M.H.; Liu, C.W.. | Technical Digest - International Electron Devices Meeting, IEDM | |||
27 | 2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
28 | 2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
29 | 2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
30 | 2018 | BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. | Chen, Pin-Shiang; Lee, Shou-Chung; Oates, A. S.; CHEE-WEE LIU | IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018 | |||
31 | 2018 | Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. | Luo, Zong-You; Tsou, Ya-Jui; Dong, Yi-Cheng; Lu, Ching; CHEE-WEE LIU | Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018 | |||
32 | 2018 | Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence | Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; CHEE-WEE LIU | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 | |||
33 | 2018 | Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation | Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | |||
34 | 2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
35 | 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
36 | 2017 | Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs | CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
37 | 2017 | Solid solubility limited dopant activation of group III dopants (B, Ga & In) in Ge targeting sub-7nm node low p+ contact resistance | Borland J; Lee Y.-J; Chuang S.-S; Tseng T.-Y; CHEE-WEE LIU ; Huet K; Goodman G; Marino J. | 17th International Workshop on Junction Technology, IWJT 2017 | 4 | 0 | |
38 | 2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
39 | 2017 | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
40 | 2016 | Low contact resistivity (1.5×10-8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing | Huang, S.-H.; Lu, F.-L.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | |||
41 | 2016 | Compact modeling and simulation of TSV with experimental verification | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | |||
42 | 2016 | Advanced germanium channel transistors (invited) | Liu, C.W.; Wong, I.-H.; Huang, S.-H.; Huang, C.-H.; Hsu, S.-H.; CHEE-WEE LIU | IEEE 11th International Conference on ASIC, ASICON 2015 | |||
43 | 2016 | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S. | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 0 | 0 | |
44 | 2016 | Modeling and simulation of negative capacitance gate on Ge FETs | Liao, Y.-H.; Fan, S.-T.; CHEE-WEE LIU | ECS Transactions | |||
45 | 2016 | Modeling and simulation of TSV induced keep-out zone using silicon data | Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | |||
46 | 2016 | Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates | Lan, H.-S.; CHEE-WEE LIU | ECS Transactions | |||
47 | 2015 | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
48 | 2015 | Antireflection of nano-sized SiO sphere arrays on crystalline silicon solar cells | CHEE-WEE LIU ; Lu, C.-T.; CHEE-WEE LIU | International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | |||
49 | 2015 | Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Huang, C.-H.; Chen, Y.-S.; Shieh, T.-C.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | |||
50 | 2014 | Electron ballistic current enhancement of Ge<inf>1-x</inf>Sn<inf>x</inf> FinFETs | CHEE-WEE LIU ; Lan, H.-S.; CHEE-WEE LIU | 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | |||
51 | 2014 | Gate-all-around Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU | ECS Transactions | |||
52 | 2014 | Ge gate-all-around FETs on Si | Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | |||
53 | 2014 | Strain response of monolayer MoS<inf>2</inf> in the ballistic regime | CHEE-WEE LIU ; Chang, H.-C.; Chen, P.-S.; Yang, F.-L.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | |||
54 | 2013 | Mobility strain response and low temperature characterization of Ge p-MOSFETs | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Ciou, H.-J.; Chen, Y.-S.; Yan, J.-Y.; CHEE-WEE LIU | Device Research Conference, DRC | |||
55 | 2013 | Study of MgxZn1-xO alloys (0<x<0.15) by x-ray absorption spectroscopy | Zheng, W.; Feng, Z.C.; Fan-Hsiu, C.; Lee, J.-F.; Zheng, R.S.; Wuu, D.-S.; CHEE-WEE LIU | Advanced Materials Research | 6 | 0 | |
56 | 2013 | 3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption | Zheng, W.; Feng, Z.C.; Zheng, R.S.; Jang, L.-Y.; CHEE-WEE LIU | Materials Science Forum | |||
57 | 2013 | EUV degradation of high performance Ge MOSFETs | CHEE-WEE LIU | 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 | |||
58 | 2013 | Electrostatics and ballistic transport studies in junctionless nanowire transistors | CHEE-WEE LIU ; Yu, T.-H.; Hsu, E.; Liu, C.-W.; Colinge, J.-P.; Sheu, Y.-M.; Wu, J.; Diaz, C.H.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | |||
59 | 2013 | Manganese K- and L3-edge X-ray absorption fine structure study of Zn1-xMnxTe | Zheng, W.; Jang, L.-Y.; Lee, J.-M.; Zheng, R.S.; CHEE-WEE LIU ; Becla, P.; Feng, Z.C. | Advanced Materials Research | 3 | 0 | |
60 | 2012 | First-principles study of GeO <inf>2</inf>/Ge interfacial traps and oxide defects | CHEE-WEE LIU ; Lu, S.-C.; Chang, H.-C.; Chou, T.-P.; CHEE-WEE LIU | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | |||
61 | 2012 | Planar and 3D Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chang, H.-C.; Lin, C.-M.; Chen, Y.-T.; CHEE-WEE LIU | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology | |||
62 | 2012 | Reabsorption effects of direct band emission of Ge | CHEE-WEE LIU ; Chen, Y.-Y.; Nien, Y.-H.; Chi, Y.-H.; CHEE-WEE LIU | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | |||
63 | 2012 | Germanium gate-all-around pFETs on SOI | CHEE-WEE LIU ; Chang, H.-C.; Hsu, S.-H.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Sung, P.-J.; Luo, G.-Li.; Yin, Y.-C.; CHEE-WEE LIU | ECS Transactions | |||
64 | 2012 | SiGe nanoring formation | CHEE-WEE LIU ; Tu, W.-H.; Huang, S.-H.; CHEE-WEE LIU | International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | |||
65 | 2012 | Interfacial layer-free ZrO<inf>2</inf> on Ge with 0.39-nm EOT, κ?43, ?2×10<sup>-3</sup> A/cm<sup>2</sup> gate leakage, SS =85 mV/dec, I<inf>on</inf>/I<inf>off</inf> =6×10<sup>5</sup>, and high strain response | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
66 | 2012 | Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <inf>on</inf> and nearly defect-free channels | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
67 | 2012 | Hybrid CIS/Si near-IR sensor and 16% PV energy-harvesting technology | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
68 | 2012 | Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si | Feng, Z.C.; Chen, C.; Xu, Q.; Mendis, S.P.; Jang, L.-Y.; Tin, C.-C.; Lee, K.-Y.; Liu, C.W.; Wu, Z.; KUNG-YEN LEE ; CHEE-WEE LIU | Materials Science Forum | 1 | 0 | |
69 | 2012 | Scanning electron beam induced deposition for conductive tip modification. | Chen, P. L.; Su, James; Shiao, M. H.; Chang, M. N.; Lee, C. H.; CHIH-WEN LIU ; CHEE-WEE LIU | 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, March 5-8, 2012 | 6 | 0 | |
70 | 2011 | A parameterized SPICE macromodel of resistive random access memory and circuit demonstration | CHEE-WEE LIU ; Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | |||
71 | 2011 | Germanium oxide passivation for Ge absorber | CHEE-WEE LIU ; Chen, Y.-Y.; Chang, W.-C.; Chan, S.T.; CHEE-WEE LIU | IEEE Photovoltaic Specialists Conference | |||
72 | 2011 | Physical mechanism of HfO<inf>2</inf>-based bipolar resistive random access memory | CHEE-WEE LIU ; Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | |||
73 | 2011 | Recovery of light induced degradation of micromorph solar cells by reverse bias | CHEE-WEE LIU ; Sun, H.-C.; Chen, W.-D.; Cheng, T.H.; Yang, Y.-J.; Liu, C.W.; Shih, H.-T.; CHEE-WEE LIU | ECS Transactions | |||
74 | 2011 | Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs | Hsiao, Y.-J.; Hsueh, T.-J.; Shieh, J.-M.; Yeh, Y.-M.; Wang, C.-C.; Dai, B.-T.; Hsu, W.-W.; Lin, J.-Y.; Shen, C.-H.; Liu, C.W.; Hu, C.; Yang, F.-L.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | |||
75 | 2011 | Nearly defect-free Ge gate-all-around FETs on Si substrates | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
76 | 2011 | Defect related negative temperature coefficiency of short circuit current of Cu(In, Ga)Se <inf>2</inf> solar cells | Cheng, T.-H.; Chen, J.Y.; Hsu, W.W.; Liu, C.W.; Hsiao, C.Y.; CHIH-WEN LIU ; CHEE-WEE LIU | Conference Record of the IEEE Photovoltaic Specialists Conference | 0 | 0 | |
77 | 2011 | Synchrotron radiation X-ray absorption and optical studies of cubic SiC films grown on Si by chemical vapor deposition | Tu, Y.-L.; Huang, Y.-H.; Kong, L.; Lee, K.-Y.; Jang, L.-Y.; Tin, C.-C.; Liu, C.-W.; KUNG-YEN LEE ; CHEE-WEE LIU | Advanced Materials Research | 0 | 0 | |
78 | 2011 | Ion implanted boron emitter N-silicon solar cells with wet oxide passivation | Ho, W.S.; Huang, Y.-H.; Hsu, W.-W.; Chen, Y.-Y.; Chen, Y.-Y.; CHIH-WEN LIU ; CHEE-WEE LIU | Conference Record of the IEEE Photovoltaic Specialists Conference | 8 | 0 | |
79 | 2010 | Surface orientation effects on SiGe quantum dots and nanorings formation | CHEE-WEE LIU ; Lee, C.-H.; Tu, W.H.; Lin, C.-M.; Chang, H.T.; Lee, S.W.; CHEE-WEE LIU | ECS Transactions | |||
80 | 2010 | Enhanced voltage linearity of HfO<inf>2</inf> metal-insulator-metal capacitors by H<inf>2</inf>O prepulsing treatment on bottom electrode | CHEE-WEE LIU ; Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; CHEE-WEE LIU | ECS Transactions | |||
81 | 2010 | Thermal oxide, Al<inf>2</inf>O<inf>3</inf> and amorphous-Si passivation layers on silicon | CHEE-WEE LIU ; Ho, W.S.; Chen, Y.-Y.; Cheng, T.-H.; Chen, J.-Y.; Lu, J.-A.; Huang, P.-L.; CHEE-WEE LIU | IEEE Photovoltaic Specialists Conference | |||
82 | 2010 | Enhancements of direct band radiative recombination from Ge | CHEE-WEE LIU ; Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Chan, S.T.; CHEE-WEE LIU | ECS Transactions | |||
83 | 2010 | Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on flexible polyimide substrates | CHEE-WEE LIU ; Hsu, W.; Lin, C.-M.; Peng, C.-Y.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; CHEE-WEE LIU | International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 | |||
84 | 2010 | Stable flexible organic thin film transistor with self-assembled monolayers surface treatment | Liao, C.L.; Chou, C.C.; Liu, C.W.; Chiang, K.Y.; Leu, C.Y.; Ding, J.M.; Hu, J.P.; CHEE-WEE LIU | IDW'10 - Proceedings of the 17th International Display Workshops | |||
85 | 2010 | High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
86 | 2010 | Extrinsic effects of indirect radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Lee, C.-H.; Cheng, T.-H.; Chen, Y.-Y.; Peng, K.-L.; Chan, S.-T.; Liu, C.W.; Yuji, Y.; Bernd, T.; CHEE-WEE LIU | ECS Transactions | |||
87 | 2010 | Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFET | CHEE-WEE LIU ; Chen, W.-Y.; Yu, T.-H.; Ohtou, T.; Sheu, Y.-M.; Wu, J.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | |||
88 | 2009 | Dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Sun, H.-C.; Kuo, P.-S.; Chen, Y.-T.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |||
89 | 2009 | Optimization of a saddle-like FinFET by device simulation for sub-50nm DRAM application | CHEE-WEE LIU ; Chang, H.-C.; Kuo, P.-S.; Peng, C.-Y.; Chen, Y.-T.; Chen, W.-Y.; CHEE-WEE LIU | 2009 International Semiconductor Device Research Symposium, ISDRS '09 | |||
90 | 2009 | Speedy hydrocarbon pollutants treatment through the cell interaction by a novel strain Rhodococcus: Its fundamental characteristics and applications | CHEE-WEE LIU ; Liu, C.W.; Chang, W.N.; Liu, H.-S.; CHEE-WEE LIU | ACS National Meeting | |||
91 | 2009 | Comparison on optimized optical transmission and electrical resistivity between indium tin oxide and gallium doped zinc oxide | CHEE-WEE LIU ; Hsu, W.-L.; Meng, F.-S.; Lin, C.-T.; Liu, K.-C.; Cheng, T.-H.; Liu, C.-W.; Huang, J.; Lin, G.-R.; CHEE-WEE LIU | Materials Research Society Symposium | |||
92 | 2009 | A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
93 | 2009 | A design of 1T memory cells using channel traps for long data retention time | CHEE-WEE LIU ; Chen, Y.-T.; Huang, C.-F.; Sun, H.-C.; Wu, T.-Y.; Ku, C.-Y.; Liu, C.W.; Hsu, Y.-C.; Chen, J.-S.; CHEE-WEE LIU | 2009 International Semiconductor Device Research Symposium | |||
94 | 2009 | Improved SPICE macromodel of phase change random access memory | CHEE-WEE LIU ; Chang, H.-L.; Chang, H.-C.; Yang, S.-C.; Tsai, H.-C.; Li, H.-C.; CHEE-WEE LIU | 2009 International Symposium on VLSI Design, Automation and Test | |||
95 | 2008 | Process strain induced by nickel germanide on (100) Ge substrate | CHEE-WEE LIU ; Peng, C.-Y.; YI-HSUAN YANG ; Lin, C.-M.; Yang, Y.-J.; Huang, C.-F.; CHEE-WEE LIU | International Conference on Solid-State and Integrated Circuits Technology, ICSICT | |||
96 | 2008 | A new NBTI characterization method on polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | IDW '08 - 15th International Display Workshops | |||
97 | 2008 | Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias | CHEE-WEE LIU ; Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | ECS Transactions | |||
98 | 2008 | Micro-Raman studies on nickel germanides formed on (110) crystalline Ge | CHEE-WEE LIU ; Peng, C.-Y.; Huang, C.-F.; Yang, Y.-J.; CHEE-WEE LIU | ECS Transactions | |||
99 | 2008 | SiGe quantum rings by ultra-high vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, C.-H.; Lin, C.M.; Liu, C.W.; Chang, H.T.; Lee, S.W.; Shushpannikov, P.; Gorodtsov, V.A.; Goldstein, R.V.; CHEE-WEE LIU | ECS Transactions | |||
100 | 2008 | Metal Oxide Semiconductor UV Sensor | CHEE-WEE LIU ; Ho, W.S.; Lin, C.-H.; Kuo, P.-S.; Hsu, W.W.; Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; CHEE-WEE LIU | IEEE Sensors | |||
101 | 2008 | Comprehensive study of bias temperature instability on polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Chen, Y.-T.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Lin, K.-C.; Chen, J.-S.; CHEE-WEE LIU | International Conference on Solid-State and Integrated Circuits Technology, ICSICT | |||
102 | 2007 | Novel transport mechanism of SiGe dot MOS tunneling diodes | CHEE-WEE LIU ; Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; CHEE-WEE LIU | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | |||
103 | 2007 | Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime | CHEE-WEE LIU ; Yang, Y.-J.; Chang, S.T.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | |||
104 | 2007 | Mobility enhancement technology | CHEE-WEE LIU ; Yuan, F.; CHEE-WEE LIU | ICSICT-2006: 8th International Conference on Solid-State and Integrated Circuit Technology | |||
105 | 2007 | Comprehensive study on dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Chao, C.-W.; Lin, K.-C.; CHEE-WEE LIU | 2007 International Semiconductor Device Research Symposium | |||
106 | 2007 | Electrically pumped Ge laser at room temperature | Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU | International Electron Devices Meeting | 9 | 0 | |
107 | 2007 | Electroluminescence from strained SiGe quantum dot light-emitting diodes | Cheng, T.-H.; Liao, M.H. ; CHEE-WEE LIU | 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
108 | 2007 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
109 | 2006 | Differential power combining technique for general power amplifiers using lumped component network | CHEE-WEE LIU ; Chang, H.-L.; Lin, P.-T.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; Liu, C.W.; Yang, T.-Y.; Ma, G.-K.; CHEE-WEE LIU | Asia-Pacific Microwave Conference Proceedings, APMC | |||
110 | 2006 | MOS Si/Ge photodetectors | CHEE-WEE LIU ; Lin, C.-H.; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | |||
111 | 2006 | The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs | CHEE-WEE LIU ; Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
112 | 2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
113 | 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | CHEE-WEE LIU ; Liao, M.H.; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
114 | 2006 | Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
115 | 2006 | Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate | Yeo, C.C.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; Cho, B.J.; CHEE-WEE LIU | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | |||
116 | 2006 | The process and optoelectronic characterization of Ge-on-insulator | Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
117 | 2006 | A PDMS mold with embedded sensory array for micromolding processes | Luo, R.C.; Lin, C.F.; REN-CHYUAN LUO ; CHEE-WEE LIU | IECON Proceedings (Industrial Electronics Conference) | 0 | 0 | |
118 | 2005 | Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress | CHEE-WEE LIU ; Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | |||
119 | 2005 | Strained CMOS technology with Ge | CHEE-WEE LIU ; Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Proceedings of Electrochemical Society | |||
120 | 2005 | High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control | CHEE-WEE LIU ; Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou; CHEE-WEE LIU | IEEE Radio Frequency Integrated Circuits Symposium | |||
121 | 2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | |||
122 | 2005 | Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing | Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; CHEE-WEE LIU | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | |||
123 | 2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | |||
124 | 2005 | 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
125 | 2005 | Novel schottky barrier strained germanium PMOS | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | |||
126 | 2004 | Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation | CHEE-WEE LIU ; Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |||
127 | 2004 | Strained Si<inf>1-x</inf>C<inf>x</inf> field effect transistor on SiGe substrate | CHEE-WEE LIU ; Chang, S.T.; Lee, M.-H.; Lu, S.C.; CHEE-WEE LIU | Proceedings of Electrochemical Society | |||
128 | 2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu C.-Y; Chen T.C; Lee M.H; Huang S.-H; Lee L.S; CHEE-WEE LIU | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | 1 | ||
129 | 2004 | The growth of high-quality SiGe films with an intermediate Si layer | Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | |||
130 | 2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | |||
131 | 2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |||
132 | 2004 | BICMOS devices under mechanical strain | CHEE-WEE LIU ; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | |||
133 | 2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHEE-WEE LIU ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU | OSA Trends in Optics and Photonics Series | |||
134 | 2004 | CMOS optoelectronics | CHEE-WEE LIU ; Liu, C.W.; Hsu, B.-C.; CHEE-WEE LIU | Electrochemical Society | |||
135 | 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
136 | 2003 | Mextram modeling of Si/SiGe heterojunction phototransistors | CHEE-WEE LIU ; Yuan, F.; Pei, Z.; Shi, J.W.; Chang, S.T.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | |||
137 | 2003 | Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity | CHEE-WEE LIU ; Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | |||
138 | 2003 | Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate | Chang, S.T.; Liu, Y.H.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | |||
139 | 2003 | Analysis on the temperature dependent characteristics of SiGe HBTs | Liang, C.-S.; Pei, Z.; Hsu, Y.-M.; Pan, T.-M.; Liu, Y.-H.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | |||
140 | 2003 | Optimal SiGe:C HBT module for BiCMOS applications | Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |||
141 | 2003 | Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs | CHEE-WEE LIU | International Electron Devices Meeting | |||
142 | 2003 | Radiative and nonradiative recombinations in efficient light-emitting metal-oxide-silicon tunneling diodes | Chen, M.-J.; Chang, J.-F.; Liang, E.-Z.; Lin, C.-F.; Liu, C.W.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
143 | 2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
144 | 2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | CHEE-WEE LIU ; Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
145 | 2002 | High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET | Chen, P.S.; Tseng, Y.T.; Tsai, M.-J.; CHEE-WEE LIU | 2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002 | |||
146 | 2002 | Self-correction two-machine equivalent model for stability control of FACT system using real-time phasor measurements | Yu, C.-S.; CHEE-WEE LIU | IEE Proceedings: Generation, Transmission and Distribution | 19 | 15 | |
147 | 2002 | Photoluminescence and electroluminescence studies on ITO/SiO<inf>2</inf>/Si tunneling diodes for efficient light emission from silicon | Chen, M.-J.; Chang, J.-F.; Tsai, C.S.; Liang, E.-Z.; Lin, C.-F.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
148 | 2001 | Oxide roughness enhanced reliability of MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | |||
149 | 2001 | Novel photodetectors using metal-oxide-silicon tunneling structures | CHEE-WEE LIU ; Hsu, B.-C.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | |||
150 | 2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lin, C.-H.; CHEE-WEE LIU | Asia-Pacific Microwave Conference Proceedings, APMC | |||
151 | 2001 | Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes | CHING-FUH LIN ; MIIN-JANG CHEN ; Lee, Ming-Hung; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
152 | 2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | |||
153 | 2000 | Tunneling induced electroluminescence from metal-oxide-semiconductor structure on silicon | CHEE-WEE LIU ; Lin, Ching-Fuh; Liu, Cheewee; Chen, Miin-Jang; Lee, Ming-Hung; Lin, I-Cheng; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | |||
154 | 2000 | Metal-oxide-semiconductor light-emitting diodes at Si bandgap energy | CHEE-WEE LIU ; Chen, Miin-Jang; Lin, Ching-Fuh; Chiu, Jiann Jong; Liu, Cheewee; Chang, Shu-Wei; CHEE-WEE LIU | Conference on Lasers and Electro-Optics Europe | |||
155 | 2000 | Structural, optical and electrical characteristics of silicon carbon nitride | CHEE-WEE LIU ; Chen, L.C.; Wu, C.T.; Wen, C.-Y.; Wu, J.-J.; Liu, W.T.; CHEE-WEE LIU | Materials Research Society Symposium | |||
156 | 1999 | Light emission and detection by metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
157 | 1999 | Silicon surface grating formation with high power UV laser | CHEE-WEE LIU ; Chen, Cheng-Yen; Chao, Chung-Yen; Gurtler, Steffen; Liu, Chee-Wee; Yang, C.C.; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | |||
158 | 1999 | Modeling and optimization of wafer-level spatial uniformity with the use of rational subgrouping | CHEE-WEE LIU ; Guo, Ruey-Shan; Chen, Argon; Liu, Cheewee; Lin, A.; Lan, M.; CHEE-WEE LIU | IEEE International Symposium on Semiconductor Manufacturing Conference | |||
159 | 1998 | Laser ablated silicon gratings for temperature measurements | CHEE-WEE LIU ; Chao, Chung-Yen; Chen, Cheng-Yen; Liu, Chee-Wee; Chang, Yih; Yang, C.C.; CHEE-WEE LIU | Conference on Lasers and Electro-Optics Europe | |||
160 | 1998 | 300 Mb/s BiCMOS EPR4 read channel for magnetic hard disks | CHEE-WEE LIU | IEEE International Solid-State Circuits Conference | |||
161 | 1998 | RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU | Materials Research Society Symposium | |||
162 | 1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | |||
163 | 1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | CHEE-WEE LIU ; Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | |||
164 | 1996 | Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Research Society Symposium | |||
165 | 1995 | Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Research Society Symposium | |||
166 | 1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | |||
167 | Jun | Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications | Hua, Wei-Chun; Lin, Po-Tsung; Lin, Chun-Ping; Lin, Che-Yung; Chang, Huan-Lin; Liu, Chee Wee ; Yang, Tzu-Yi; Ma, Gin-Kou | Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 | 0 | 0 | |
168 | Dec | Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si | CHING-FUH LIN ; MIIN-JANG CHEN ; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; CHEE-WEE LIU | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 |