第 1 到 637 筆結果,共 637 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2020 | Challenges of Topological Insulator Research: Bi<inf>2</inf>Te<inf>3</inf> Thin Films and Magnetic Heterostructures | Pereira, V.M.; MINGHWEI HONG et al. | Physica Status Solidi (B) Basic Research | 8 | 8 | |
2 | 2020 | Surface electronic structure of Si<inf>1-x</inf>Ge <inf>x</inf>(001)-2 × 1: A synchrotron radiation photoemission study | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 6 | 6 | |
3 | 2020 | Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.R.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Express | 8 | 7 | |
4 | 2020 | Topological insulator interfaced with ferromagnetic insulators: B i2 T e3 thin films on magnetite and iron garnets | Pereira, V.M.; MINGHWEI HONG et al. | Physical Review Materials | 21 | 18 | |
5 | 2020 | Thermal effect in Pt/YIG heterostructure induced by direct microwave power injection | Liu, Y.-C.; Wu, C.-N.; Chang, L.-J.; Fanchiang, Y.-T.; Tseng, C.-C.; Hong, M.; Lee, S.-F.; Kwo, J.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 1 | 2 | |
6 | 2020 | Epitaxy from a periodic y–o monolayer: Growth of single-crystal hexagonal YALO<inf>3</inf> perovskite | Hong, M.; Cheng, C.-K.; Lin, Y.-H.; Young, L.B.; Cai, R.-F.; Hsu, C.-H.; Wu, C.-T.; MINGHWEI HONG ; CHIA-KUEN CHENG | Nanomaterials | 0 | 0 | |
7 | 2020 | Unraveling the electronic structures in different phases of gadolinium sesquioxides performed by electron energy loss spectroscopy | Shu, G.-J.; Liou, S.-C.; Chun-Hsin Kuo, W.; Wu, C.-T.; Wu, P.-C.; Klingshirn, C.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | AIP Advances | 3 | 3 | |
8 | 2019 | Evidence for exchange Dirac gap in magnetotransport of topological insulator-magnetic insulator heterostructures | Yang, S.R.; Fanchiang, Y.T.; Chen, C.C.; Tseng, C.C.; Liu, Y.C.; Guo, M.X.; Hong, M.; Lee, S.F.; Kwo, J.; MINGHWEI HONG | Physical Review B | 21 | 20 | |
9 | 2019 | Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum | Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 16 | 16 | |
10 | 2019 | Microscopic views of atomic and molecular oxygen bonding with epi ge(001)-2 × 1 studied by high-resolution synchrotron radiation photoemission | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Nanomaterials | 5 | 5 | |
11 | 2019 | Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO<inf>3</inf> on GaAs(111)A Using Laminated Atomic Layer Deposition | Young, L.B.; CHIA-KUEN CHENG ; Lin K.-Y; Lin Y.-H; Wan H.-W; Cai R.-F; Lo S.-C; Li M.-Y; Hsu C.-H; Kwo J; MINGHWEI HONG | Crystal Growth and Design | 3 | 3 | |
12 | 2019 | Topological insulator Bi <inf>2</inf> Se <inf>3</inf> films on rare earth iron garnets and their high-quality interfaces | Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Letters | 15 | 15 | |
13 | 2018 | High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering ??correlation between magnetic properties and film strain | Wu, C.N.; Tseng, C.C.; Fanchiang, Y.T.; Cheng, C.K.; Lin, K.Y.; Yeh, S.L.; Yang, S.R.; Wu, C.T.; Liu, T.; Wu, M.; Hong, M.; Kwo, J.; MINGHWEI HONG | Scientific Reports | 45 | 46 | |
14 | 2018 | A new stable, crystalline capping material for topological insulators | Lin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | APL Materials | 7 | 6 | |
15 | 2018 | Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi <inf>2</inf> Se <inf>3</inf> /yttrium iron garnet heterostructures | Fanchiang, Y.T.; Chen, K.H.M.; Tseng, C.C.; Chen, C.C.; Cheng, C.K.; Yang, S.R.; Wu, C.N.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Nature Communications | 57 | 54 | |
16 | 2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
17 | 2018 | Atom-to-atom interaction of O <inf>2</inf> with epi Ge(001)-2 ? 1 in elucidating GeO <inf>x</inf> formation | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 5 | 6 | |
18 | 2018 | Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | ACS Omega | 7 | 8 | |
19 | 2018 | High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering | Wu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG | AIP Advances | 27 | 23 | |
20 | 2017 | Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001) | Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
21 | 2017 | Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study | Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Surface Science | 7 | 7 | |
22 | 2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
23 | 2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 14 | 15 | |
24 | 2017 | Van der Waals epitaxy of topological insulator Bi<inf>2</inf>Se<inf>3</inf> on single layer transition metal dichalcogenide MoS<inf>2</inf> | Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Letters | 20 | 16 | |
25 | 2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
26 | 2017 | Surface electronic structure of epi germanium (001)-2 ? 1 | Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 17 | 14 | |
27 | 2017 | Atomic layer deposited single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A | Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
28 | 2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
29 | 2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 3 | 3 | |
30 | 2017 | Ultra-high thermal stability and extremely low D<inf>it</inf> on HfO<inf>2</inf>/p-GaAs(001) interface | Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 9 | 9 | |
31 | 2017 | Analysis of border and interfacial traps in ALD-Y<inf>2</inf>O<inf>3</inf> and -Al<inf>2</inf>O<inf>3</inf> on GaAs via electrical responses - A comparative study | Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 11 | 11 | |
32 | 2017 | Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition | Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 4 | 4 | |
33 | 2017 | Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge | Hsueh, W.-J.; Chiu, P.-C.; Hong, M.-H.; Chyi, J.-I.; MINGHWEI HONG | Physica Status Solidi (B) Basic Research | 0 | 0 | |
34 | 2016 | Detection of topological surface states by spin pumping at room temperature | Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG | Bulletin of the American Physical Society | |||
35 | 2016 | Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1) | Lin, J.-H.; Shen, Y.-K.; Liu, W.-R.; Lu, C.-H.; Chen, Y.-H.; Chang, C.-P.; Lee, W.-C.; Hong, M.; Kwo, J.-R.; Hsu, C.-H.; Hsieh, W.-F.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 5 | 5 | |
36 | 2016 | High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer | Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG | Bulletin of the American Physical Society | |||
37 | 2016 | Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y <inf>2</inf> O <inf>3</inf> /n-GaAs(001) | Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 12 | 12 | |
38 | 2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 4 | 4 | |
39 | 2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition | Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 0 | 0 | |
40 | 2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG | Microelectronic Engineering | |||
41 | 2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer deposition | Fanchiang, Yu-Ting; Chiang, Tsung-Hung; Pi, Tun-Wen; Wertheim, Gunther K; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | |||
42 | 2015 | Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping | Wu, C. N.; Lin, Y. H.; Fanchiang, Y. T.; Hung, H. Y.; Lin, H. Y.; Lin, P. H.; Lin, J. G. ; Lee, S. F.; Hong, M.; MINGHWEI HONG | Journal of Applied Physics | 10 | 11 | |
43 | 2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures | Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanotechnology | 15 | 16 | |
44 | 2015 | Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition | Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Materials | |||
45 | 2015 | Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface | Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | |||
46 | 2015 | Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization | Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 20 | 20 | |
47 | 2015 | Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface | Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Applied Physics Letters | 6 | 6 | |
48 | 2015 | Single-Crystal Y <inf>2</inf> O <inf>3</inf> Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition | Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Materials | 17 | 17 | |
49 | 2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 15 | 15 | |
50 | 2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures | Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Nanotechnology | |||
51 | 2015 | Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface | Chu, Jui-Lin; Hong, Ming-Hwei; Kwo, Juei-Nai; Pi, Tun-Wen; Chyi, Jen-Inn; MINGHWEI HONG | ||||
52 | 2015 | Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization | Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
53 | 2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | |||
54 | 2014 | Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100) | Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
55 | 2014 | Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, RL; Chiang, TH; Hsueh, WJ; Chen, KH; Lin, KY; Brown, GJ; Chyi, JI; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
56 | 2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 33 | 29 | |
57 | 2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe <inf>3</inf> Si/GaAs structures | Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; Lin, J. G. | Applied Physics Letters | 6 | 6 | |
58 | 2014 | Single crystal Gd<inf>2</inf>O<inf>3</inf> epitaxially on GaAs(111)A | Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG | CrystEngComm | 8 | 9 | |
59 | 2014 | (Invited) High $κ$/InGaAs for Ultimate CMOS-Interfacial Passivation, Low Ohmic Contacts, and Device Performance | Chang, WH; Lin, TD; Liao, Min-Han; Pi, TW; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | ECS Transactions | |||
60 | 2014 | Single crystal Gd 2 O 3 epitaxially on GaAs (111) A | Chiang, Tsung-Hung; Wu, Shao-Yun; Huang, Tsung-Shiew; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG | CrystEngComm | |||
61 | 2014 | MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the Same | Liao, Ming-Han; Hong, Minghwei; MINGHWEI HONG | ||||
62 | 2014 | III-V compound semiconductor transistors - From planar to nanowire structures | Riel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG | MRS Bulletin | 201 | 192 | |
63 | 2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As(001)-4 ? 2 from atomic layer deposition | Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 11 | 12 | |
64 | 2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 14 | 13 | |
65 | 2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer deposition | Pi, TW; Lin, TD; Lin, HY; Chang, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
66 | 2014 | Method and system for manufacturing semiconductor device | Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG | ||||
67 | 2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures | Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
68 | 2014 | III-V compound semiconductor transistors—from planar to nanowire structures | Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG | MRS Bulletin | |||
69 | 2013 | Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition | Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Applied Surface Science | 19 | 19 | |
70 | 2013 | Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN | Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | ACS applied materials & interfaces | |||
71 | 2013 | Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111) | Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG | Optics express | |||
72 | 2013 | Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt | Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | |||
73 | 2013 | Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study | Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; others; MINGHWEI HONG | Applied Physics Express | |||
74 | 2013 | Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces | Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 24 | 22 | |
75 | 2013 | Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y<inf>2</inf>O<inf>3</inf>-buffered Si (111) | Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Optics Express | 2 | 2 | |
76 | 2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study | Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG | Nanoscale research letters | |||
77 | 2013 | Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> on GaN | Chang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y.; Lee, Y.-J.; Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | ACS Applied Materials and Interfaces | 19 | 18 | |
78 | 2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission study | Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Applied Physics | 7 | 7 | |
79 | 2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission study | Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Applied Physics | |||
80 | 2013 | Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study | Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 18 | 17 | |
81 | 2013 | Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals | Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | |||
82 | 2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
83 | 2013 | High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf> | Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 48 | |
84 | 2013 | Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces | Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
85 | 2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study | Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanoscale Research Letters | 0 | ||
86 | 2012 | Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition | Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
87 | 2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 4 | 4 | |
88 | 2012 | Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111) | Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; Hong, M; Kwo, J; Hsu, C-H; Hsieh, WF; MINGHWEI HONG | CrystEngComm | 6 | 7 | |
89 | 2012 | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
90 | 2012 | Correlation between oxygen vacancies and magnetism in Mn-doped Y <inf>2</inf> O <inf>3</inf> nanocrystals investigated by defect engineering techniques | Wu, T.S.; Chen, Y.C.; Shiu, Y.F.; Peng, H.J.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Hsu, C.W.; Chou, L.J.; Pao, C.W.; Lee, J.F.; Kwo, J.; Hong, M.; Soo, Y.L.; MINGHWEI HONG | Applied Physics Letters | 8 | 9 | |
91 | 2012 | The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al <inf>2</inf>O <inf>3</inf> buffer layer | Liu, W.-R.; Lin, B.H.; Yang, S.; Kuo, C.C.; Li, Y.-H.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | CrystEngComm | 13 | 12 | |
92 | 2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 15 | 15 | |
93 | 2012 | Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniques | Wu, TS; Chen, YC; Shiu, YF; Peng, HJ; Chang, SL; Lee, HY; Chu, PP; Hsu, CW; Chou, LJ; Pao, CW; others; MINGHWEI HONG | Applied Physics Letters | |||
94 | 2012 | $\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | Bulletin of the American Physical Society | |||
95 | 2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
96 | 2012 | POWDER-PROCESSED Nb5Al SUPERCONDUCTING WIRE | Hong, JM; Holthuis, JT; Wu, IW; Hong, M; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | |||
97 | 2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
98 | 2012 | Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111) | Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei ; Caymax, Matty; MINGHWEI HONG | Applied Physics Express | 5 | 5 | |
99 | 2012 | Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors | Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
100 | 2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y <inf>2</inf>O <inf>3</inf> dilute magnetic oxide films | Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; SSU-YEN HUANG ; MINGHWEI HONG | Applied Physics Letters | 8 | 7 | |
101 | 2012 | MAKING A15 SUPERCONDUCTING MATERIALS | Hong, M; Dietderich, D; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | |||
102 | 2012 | The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer | Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG | CrystEngComm | |||
103 | 2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films | Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
104 | 2012 | $\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | |||
105 | 2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
106 | 2012 | PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | |||
107 | 2012 | Surface-Atom Core-Level Shift in GaAs(111)A-2x2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei ; MINGHWEI HONG | Journal of the Physical Society of Japan | 10 | 10 | |
108 | 2012 | Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | |||
109 | 2012 | IN BRONZE-PROCESSED Nb5Sn | Hong, M; Wu, IW; Morris Jr, JW; Gilbert, W; Hassenzahl, WV; Taylor, C; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | |||
110 | 2012 | TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGET | Hong, M; Kortan, AR; Kwo, J; Bacon, DD; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | |||
111 | 2012 | Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001),(110), and (111) | Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc; MINGHWEI HONG | Applied Physics Express | |||
112 | 2012 | Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition | Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 48 | 48 | |
113 | 2012 | Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device | Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 9 | 9 | |
114 | 2012 | Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric | Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 4 | 4 | |
115 | 2012 | 064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | |||
116 | 2012 | 高介電閘極氧化層和金屬閘極於矽和三五半導體之研究 | Kwo, Raynien; MINGHWEI HONG ; Huang, Tsung-Shiew; 吳彥達; Wu, Yan-Dar | ||||
117 | 2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG | Surface Science | |||
118 | 2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
119 | 2011 | Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy | Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P; Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | |||
120 | 2011 | Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001) | Liu, YC; Chang, P; Huang, SY; Chang, LJ; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | |||
121 | 2011 | Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C-L; Lee, WC; Chu, LK; Hong, M; Kwo, J; Chang, Y-M; MINGHWEI HONG | Applied Physics Letters | |||
122 | 2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | |||
123 | 2011 | Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET | Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 2 | |
124 | 2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
125 | 2011 | The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer | Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Crystal Growth and Design | 14 | 14 | |
126 | 2011 | MBE - Enabling technology beyond Si CMOS | Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 6 | 6 | |
127 | 2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs | Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
128 | 2011 | Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaN | Chang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 20 | 20 | |
129 | 2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
130 | 2011 | Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG | Applied Physics Letters | 26 | 23 | |
131 | 2011 | Atomic-scale determination of band offsets at the Gd<inf>2</inf>O <inf>3</inf>/GaAs (100) hetero-interface using scanning tunneling spectroscopy | Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Applied Physics Letters | 10 | 11 | |
132 | 2011 | Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN | Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
133 | 2011 | Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei ; MINGHWEI HONG | Applied Physics Express | 32 | 32 | |
134 | 2011 | Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics | Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
135 | 2011 | Thermal annealing and grain boundary effects on ferromagnetism in Y2O3: Co diluted magnetic oxide nanocrystals | Soo, YL; Wu, TS; Wang, CS; Chang, SL; Lee, HY; Chu, PP; Chen, CY; Chou, LJ; Chan, TS; Hsieh, CA; others; MINGHWEI HONG | Applied Physics Letters | |||
136 | 2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
137 | 2011 | Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)] | Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG | Applied Physics Letters | |||
138 | 2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG | Applied Physics Letters | |||
139 | 2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J.Raynien; MINGHWEI HONG | Applied Physics Express | 10 | 10 | |
140 | 2011 | Thermal annealing and grain boundary effects on ferromagnetism in Y <inf>2</inf> O <inf>3</inf> :Co diluted magnetic oxide nanocrystals | Soo, Y.L.; Wu, T.S.; Wang, C.S.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Chen, C.Y.; Chou, L.J.; Chan, T.S.; Hsieh, C.A.; Lee, J.F.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 10 | 151 | |
141 | 2011 | Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivation | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG | Surface Science | 10 | 8 | |
142 | 2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | |||
143 | 2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
144 | 2011 | Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
145 | 2011 | Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET | Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
146 | 2011 | Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film | Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | |||
147 | 2011 | MBE—Enabling technology beyond Si CMOS | Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
148 | 2011 | Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy | Chiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
149 | 2011 | Strong crystal anisotropy of magneto-transport property in Fe<inf>3</inf>Si epitaxial film | Hung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; SSU-YEN HUANG ; MINGHWEI HONG | Journal of Crystal Growth | 7 | 6 | |
150 | 2011 | Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Applied Physics Express | |||
151 | 2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | |||
152 | 2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
153 | 2011 | The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer | Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | Crystal Growth & Design | |||
154 | 2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG | Applied Physics Letters | 59 | 56 | |
155 | 2011 | H 2 S molecular beam passivation of Ge (001) | Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG | Microelectronic Engineering | |||
156 | 2011 | Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
157 | 2011 | 利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究 | Huang, Tsung-Shiew; MINGHWEI HONG ; Chang, Pen; Kwo, Jueinai; 張翔筆 | ||||
158 | 2010 | DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG | Jorurnal Vacuum Science and Technology B | |||
159 | 2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
160 | 2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | |||
161 | 2010 | Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001) | Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG | Crystal Growth & Design | |||
162 | 2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric | Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG | Microelectronic Engineering | |||
163 | 2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
164 | 2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111) | Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | |||
165 | 2010 | Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing | Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG | Journal of Physics D: Applied Physics | |||
166 | 2010 | A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI | Hong, Minghwei; MINGHWEI HONG | Lawrence Berkeley National Laboratory | |||
167 | 2010 | Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 63 | 60 | |
168 | 2010 | Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | |||
169 | 2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers | Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG | Solid-State Electronics | |||
170 | 2010 | Method for forming substrates for MOS transistor components and its products | Kwo, Juei-Nai; Hong, Ming-Hwei; Lee, Wei Chin; Chang, Hsiang Pi; Wu, Yan Dar; Lee, Kun Yu; Lee, Yi Jiun; MINGHWEI HONG | ||||
171 | 2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 19 | 19 | |
172 | 2010 | $\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | Bulletin of the American Physical Society | |||
173 | 2010 | Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001) | Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Crystal Growth and Design | 14 | 12 | |
174 | 2010 | High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations | Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | J. Vacuum Science and Technology B | |||
175 | 2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | |||
176 | 2010 | Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealing | Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 10 | 10 | |
177 | 2009 | Research advances on III-V MOSFET electronics beyond Si CMOS | Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
178 | 2009 | Surface exciton polariton in monoclinic HfO2: An electron energy-loss spectroscopy study | Liou, S.C.; Chu, M.-W. ; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | New Journal of Physics | 11 | 11 | |
179 | 2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |
180 | 2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | ECS Transactions | |||
181 | 2009 | InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOS | Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG | MRS Bulletin | 34 | 33 | |
182 | 2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
183 | 2009 | Enhancement Mode InGaAs MOSFETs | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | Meeting Abstracts | |||
184 | 2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | |||
185 | 2009 | Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | |||
186 | 2009 | GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy | Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 12 | |
187 | 2009 | Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology | Chang, Wen Hsin; Lee, Chih Hsun; Chang, Yao Chung; Chang, Pen; Huang, Mao Lin; Lee, Yi Jun; Hsu, Chia-Hung; Hong, J Minghuang; Tsai, Chiung Chi; Kwo, J Raynien; others; MINGHWEI HONG | Advanced Materials | |||
188 | 2009 | Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | |||
189 | 2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Advanced Materials | 60 | 57 | |
190 | 2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
191 | 2009 | Domain matching epitaxial growth of high-quality ZnO film using a Y <inf>2</inf>O<inf>3</inf> buffer layer on Si (111) | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Crystal Growth and Design | 36 | 34 | |
192 | 2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge | Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
193 | 2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
194 | 2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth | Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 14 | 14 | |
195 | 2009 | Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts | Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | 5 | 4 | |
196 | 2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 18 | |
197 | 2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth | Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
198 | 2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
199 | 2009 | GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy | Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
200 | 2009 | InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG | MRS bulletin | |||
201 | 2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 11 | |
202 | 2009 | The Quest for III-V MOSFET Beyond Si CMOS | Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Meeting Abstracts | |||
203 | 2009 | Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
204 | 2009 | High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical properties | Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; MINGHWEI HONG | Journal of Crystal Growth | 49 | 50 | |
205 | 2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | Applied Physics Letters | |||
206 | 2008 | Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111) | Liu, W-R; Li, Y-H; Hsieh, WF; Hsu, C-H; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | Crystal Growth and Design | |||
207 | 2008 | Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy | Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics A | |||
208 | 2008 | High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics | Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
209 | 2008 | Time dependent preferential sputtering in the HfO 2 layer on Si (100) | Chang, SJ; Lee, WC; Hwang, J; Hong, M; Kwo, J; MINGHWEI HONG | Thin Solid Films | |||
210 | 2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
211 | 2008 | Transmission electron microscopy characterization of HfO <inf>2</inf>/GaAs(001) heterostructures grown by molecular beam epitaxy | Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; MINGHWEI HONG ; Kwo J. | Applied Physics A: Materials Science and Processing | 9 | 8 | |
212 | 2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 8 | 10 | |
213 | 2008 | Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111) | Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 7 | 7 | |
214 | 2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
215 | 2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | |||
216 | 2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
217 | 2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 12 | 13 | |
218 | 2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 60 | 52 | |
219 | 2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | |||
220 | 2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG | Applied Physics Letters | |||
221 | 2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 13 | 14 | |
222 | 2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
223 | 2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 18 | 17 | |
224 | 2008 | Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG | Applied Physics Letters | |||
225 | 2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
226 | 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | |||
227 | 2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y. | Applied Physics Letters | 117 | 101 | |
228 | 2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | |||
229 | 2008 | Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
230 | 2008 | High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Tsai, W.; Wang, Y.C. | Applied Physics Letters | 142 | 123 | |
231 | 2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Tung, L.T.; Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; MINGHWEI HONG ; Tsai, C.C. | Applied Physics Letters | 69 | 52 | |
232 | 2008 | Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a $γ$-Al2O3 buffer layer | Liu, WR; Li, YH; Hsieh, Wen-Feng; Hsu, CH; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Physics D: Applied Physics | |||
233 | 2008 | Time dependent preferential sputtering in the HfO2 layer on Si(100) | Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Thin Solid Films | 19 | 20 | |
234 | 2008 | Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
235 | 2008 | Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al<inf>2</inf>O<inf>3</inf> buffer layer | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; MINGHWEI HONG ; Kwo, J. | Journal of Physics D: Applied Physics | 15 | 16 | |
236 | 2008 | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Applied Physics Letters | 51 | 43 | |
237 | 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | 47 | 40 | |
238 | 2008 | Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters | Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG | Applied Physics Letters | |||
239 | 2008 | Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111) | Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
240 | 2008 | Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 21 | 21 | |
241 | 2007 | Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric | Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
242 | 2007 | Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering | Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG | Thin solid films | |||
243 | 2007 | Advance in next Century nanoCMOSFET research | Hwang, Huey-Liang; Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; Chang-Liao, Kuei-Shu; Lu, Chun-Yuan; others; MINGHWEI HONG | Applied Surface Science | 2 | 2 | |
244 | 2007 | Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG | Applied Physics Letters | |||
245 | 2007 | Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications | Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; MINGHWEI HONG | Journal of the Electrochemical Society | |||
246 | 2007 | A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics | Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG | Journal of Crystal Growth | |||
247 | 2007 | Determination of three-dimensional interfacial strain - A novel method of probing interface structure with X-ray Bragg-surface diffraction | Sun, W.-C.; Chu, C.-H.; Chang, H.-C.; Wu, B.-K.; Chen, Y.-R.; Cheng, C.-W.; Chiu, M.-S.; Shen, Y.-C.; Wu, H.-H.; Hung, Y.-S.; Chang, S.-L.; Hong, M.-H.; Tang, M.-T.; Stetsko, Yu.P.; MINGHWEI HONG | Thin Solid Films | 4 | 2 | |
248 | 2007 | MBE grown high-quality Gd<inf>2</inf>O<inf>3</inf>/Si(1 1 1) hetero-structure | Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 17 | |
249 | 2007 | Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As | Zheng, JF; Tsai, W; Hong, M; Lin, TD; Chen, CP; Kwo, J; Wang, XW; Ma, TP; MINGHWEI HONG | MRS Spring Meeting | |||
250 | 2007 | Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures | Hsu, YL; Lee, YJ; Chang, YH; Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | |||
251 | 2007 | III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics | Hong, Minghwei; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others; MINGHWEI HONG | Japanese journal of applied physics | |||
252 | 2007 | MBE grown high $κ$ dielectrics Ga 2 O 3 (Gd 2 O 3) on GaN | Chang, Yao-Chung; Lee, YJ; Chiu, YN; Lin, Tsung-Da; Wu, SY; Chiu, Han-Chin; Kwo, J; Wang, Yeong-Her; Hong, Minghwei; MINGHWEI HONG | Journal of Crystal Growth | |||
253 | 2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 46 | 45 | |
254 | 2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
255 | 2007 | Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO<inf>2</inf> for gate dielectric applications | Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG | Journal of the Electrochemical Society | 40 | 37 | |
256 | 2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG | Thin Solid Films | 9 | 9 | |
257 | 2007 | MBE grown high-quality Gd 2 O 3/Si (111) hetero-structure | Lin, TD; Hang, MC; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
258 | 2007 | Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 50 | 50 | |
259 | 2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 13 | |
260 | 2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O 2 thin films probed by EXAFS | Soo, YL; Weng, SC; Sun, WH; Chang, SL; Lee, WC; Chang, YS; Kwo, J; Hong, M; Ablett, JM; Kao, C-C; others; MINGHWEI HONG | Physical Review B | |||
261 | 2007 | Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG | Applied Physics Letters | |||
262 | 2007 | Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN | Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG | ||||
263 | 2007 | III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics | Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 91 | 86 | |
264 | 2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films | Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG | Applied Physics Letters | |||
265 | 2007 | Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate | Hong, Ming-Hwei; Kwo, Jueinai; Chen, Chih-Ping; Chang, Shiang-Pi; Lee, Wei-Chin; MINGHWEI HONG | ||||
266 | 2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
267 | 2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Applied Physics Letters | 112 | 90 | |
268 | 2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG | Applied Physics Letters | 27 | 25 | |
269 | 2007 | Interfacial trap characteristics in depletion mode GaAs MOSFETs | Lee, TC; Chan, CY; Tsai, PJ; Hsu, Shawn SH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | 1 | 1 | |
270 | 2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS | Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 11 | 11 | |
271 | 2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
272 | 2007 | A novel approach of using a MBE template for ALD growth of high-庥 dielectrics | Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG | Journal of Crystal Growth | 9 | 9 | |
273 | 2007 | Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
274 | 2007 | 具有單晶氧化鈧接面膜的磊晶用基板之製作方法 | 洪銘輝 ; 洪銘輝; 郭瑞年; 陳治平; 張翔筆; 李威縉 | ||||
275 | 2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics | Lee, KY; Lee, WC; Lee, YJ; Huang, ML; Chang, CH; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
276 | 2006 | Advanced High K Dielectrics for Nano Electronics-Science and Technologies | Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | ECS Transactions | |||
277 | 2006 | Advance in next century nano CMOSFET research and its future prospect for industry | Hwang, HL; Chiou, YK; Chang, CH; Wang, CC; Lee, KY; Wu, TB; Kwo, RN; Hong, MH; Chang-Liao, KS; Lu, CY; others; MINGHWEI HONG | 13 th International conference on Solid Films and Suefaces | |||
278 | 2006 | Structure of HfO2 films epitaxially grown on GaAs (001) | Hsu, C-H; Chang, P; Lee, WC; Yang, ZK; Lee, YJ; Hong, M; Kwo, J; Huang, CM; Lee, HY; MINGHWEI HONG | Applied Physics Letters | |||
279 | 2006 | Structural Investigation of Epitaxial HfO2 Films by X-ray Scattering | Hsu, CH; Yang, ZK; Chang, P; Hong, M; Kwo, J; Huang, Chih-Mao; Lee, Hsin-Yi; MINGHWEI HONG | SRMS-5 Conference | |||
280 | 2006 | Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 As | Chang, CH; Chiou, YK; Chang, YC; Lee, KY; Lin, TD; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
281 | 2006 | Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing | Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG | Journal of applied physics | |||
282 | 2006 | Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High $κ$ Materials on Si | Gustafsson, T; Garfunkel, E; Goncharova, L; Starodub, D; Barnes, R; Dalponte, M; Bersuker, G; Foran, B; Lysaght, P; Schlom, DG; others; MINGHWEI HONG | Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices, Springer Verlag | |||
283 | 2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG | Applied Physics Letters | 25 | 26 | |
284 | 2006 | Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention | Lai, CH; Chin, Albert; Kao, HL; Chen, KM; Hong, M; Kwo, J; Chi, CC; MINGHWEI HONG | Symposia on VLSI | |||
285 | 2006 | Structure of Sc 2 O 3 films epitaxially grown on $α$-Al 2 O 3 (0001) | Kortan, AR; Kopylov, N; Kwo, J; Hong, M; Chen, CP; Mannaerts, JP; Liou, Sy\\_Hwang; MINGHWEI HONG | Si-Hwang Liou Publications | |||
286 | 2006 | Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001) | Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG | Applied Physics Letters | 0 | ||
287 | 2006 | Flicker noise characteristics in GaAs MOSFETs | Chan, CY; Tsai, PJ; Lee, TC; Hsu, Shawn SH; Kwo, J; Hong, M; MINGHWEI HONG | MBE conference 2006 | |||
288 | 2006 | Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>As | Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 142 | 124 | |
289 | 2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
290 | 2006 | III-V Compound Semiconductor MOSFET | Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG | Meeting Abstracts | |||
291 | 2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
292 | 2006 | GENNADI BERSUKER, BRENDAN FORAN, AND | LYSAGHT, PAT; HONG, MINGHWEI; KWO, J RAYNIEN; MINGHWEI HONG | Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices | |||
293 | 2006 | GENNADI BERSUKER, BRENDAN FORAN, AND PAT LYSAGHT | HONG, MINGHWEI; KWO, J RAYNIEN; MINGHWEI HONG | Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices | |||
294 | 2006 | Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction | Sun, W.C.; Chang, H.C.; Wu, B.K.; Chen, Y.R.; Chu, C.H.; Chang, S.L.; Hong, M.; Tang, M.T.; Stetsko, Y.P.; MINGHWEI HONG | Applied Physics Letters | 12 | 12 | |
295 | 2006 | III-V MOSFET's with Advanced High k Dielectrics | Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG | ECS Transactions | |||
296 | 2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 21 | |
297 | 2006 | Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure | Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
298 | 2005 | Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface | Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
299 | 2005 | Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan | Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG | Journal of Crystal Growth | |||
300 | 2005 | Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si | Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | 真空科技 | |||
301 | 2005 | Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B | |||
302 | 2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3 | Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
303 | 2005 | Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
304 | 2005 | MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics | Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG | Journal of Crystal Growth | |||
305 | 2005 | Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy | Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Journal of Crystal Growth | |||
306 | 2005 | High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111) | Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG | Applied Physics Letters | |||
307 | 2005 | Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties | Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG | Journal of crystal growth | |||
308 | 2005 | Growth rate effects on InGaAs/GaAs quantum dots | Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; Hong, M; others; MINGHWEI HONG | MBE-Taiwan | |||
309 | 2005 | Thermodynamic stability of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) GaAs interface | Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 0 | ||
310 | 2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | Hong, M; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others; MINGHWEI HONG | Applied Physics Letters | |||
311 | 2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf> | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 0 | ||
312 | 2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
313 | 2004 | Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY; MINGHWEI HONG | MRS Proceedings | |||
314 | 2004 | Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG | Applied Physics Letters | 143 | 131 | |
315 | 2004 | Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111) | Kortan, AR; Hong, M; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH; MINGHWEI HONG | MRS Proceedings | |||
316 | 2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG | Journal of electronic materials | |||
317 | 2004 | GaAs-based metal-oxide semiconductor field-effect transistors with Al <inf>2</inf> O <inf>3</inf> gate dielectrics grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | Journal of Electronic Materials | 17 | ||
318 | 2004 | 行政院國家科學委員會專題研究計畫 期中進度報告 | 新穎氧化物與寬能帶半導體奈米介面之科學探討及其對下; 世代電子元件的影響; MINGHWEI HONG | ||||
319 | 2004 | Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs | Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG | MRS Proceedings | |||
320 | 2004 | 對三五族 MOSFET 的探索-材料科學和物理 (II) | 洪銘輝 | ||||
321 | 2003 | Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor | Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | |||
322 | 2003 | Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs | Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG | IEEE Transactions on Electron Devices | 31 | 30 | |
323 | 2003 | 4E709A, Connell Four Drive, Berkeley Heights, NJ 07922 | Epitaxy, Molecular Beam; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Crystalline oxide-silicon heterostructures and oxide optoelectronics 2002 | |||
324 | 2003 | Advances in high $κ$ gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | Journal of Crystal Growth | |||
325 | 2003 | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG | Journal of Crystal Growth | |||
326 | 2003 | NaCl: OH^-color center laser modelocked by a novel bonded saturable Bragg reflector | Mozdy, EJ; Jaspan, MA; Zhu, Z; Lo, Y-h; Pollock, CR; Bhat, R; Hong, M; MINGHWEI HONG | SPIE MILESTONE SERIES MS | |||
327 | 2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
328 | 2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
329 | 2003 | Schottky barrier height and interfacial state density on oxide-GaAs interface | Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG | Journal of applied physics | 18 | 16 | |
330 | 2003 | Direct Determination of the Stacking Order in Gd̃ 2Õ 3 Epi-Layers on GaAs | Yacoby, Yizhak; Sowwan, Mukhles; Pindak, Ron; Cross, Julie; Walko, Don; Stern, Ed; Pitney, John; MacHarrie, Robert; Hong, Minghwei; Clarke, Roy; MINGHWEI HONG | Materials Research Society | |||
331 | 2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 9 | ||
332 | 2003 | High k Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy | Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Crystalline oxide-silicon heterostructures and oxide optoelectronics | |||
333 | 2002 | Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces | Fl{\\ u; MINGHWEI HONG | Surface and interface analysis | |||
334 | 2002 | Direct atomic structure determination of epitaxially grown films: Gd 2 O 3 on GaAs (100) | Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG | Physical Review B | |||
335 | 2002 | Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing | Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
336 | 2002 | Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealing | Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 0 | 0 | |
337 | 2002 | Method of making an article comprising an oxide layer on a GaAs-based semiconductor body | Hong, Minghwei; Kuo, Jenn-Ming; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Wang, Yu-Chi; MINGHWEI HONG | ||||
338 | 2002 | High $κ$ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy | Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | MRS Proceedings | |||
339 | 2002 | Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100) | Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | |||
340 | 2002 | High dielectric constant gate oxides for silicon-based devices | Hong, Minghwei; Kortan, Ahmet Refik; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; MINGHWEI HONG | ||||
341 | 2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | |||
342 | 2002 | Optical properties of gallium oxide thin films | Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG | Applied Physics Letters | 215 | 208 | |
343 | 2002 | Single-crystal GaN/Gd2O3/GaN heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
344 | 2002 | Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces | Fluckiger, T; Erbudak, M; Hensch, A; Weisskopf, Y; Hong, M; Kortan, AR; MINGHWEI HONG | Surface and Interface Analysis | |||
345 | 2002 | Article comprising an oxide layer on a GaAs or GaN-based semiconductor body | Hong, Minghwei; Kortan, Ahmet Refik; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; MINGHWEI HONG | ||||
346 | 2001 | Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | Solid-State Electronics | |||
347 | 2001 | Interface reactions of high-k Y2O3 gate oxides with Si | Busch, BW; Kwo, J; Hong, M; Mannaerts, JP; Sapjeta, BJ; Schulte, WH; Garfunkel, E; Gustafsson, T; MINGHWEI HONG | Applied Physics Letters | |||
348 | 2001 | C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state density | Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 14 | 14 | |
349 | 2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | |||
350 | 2001 | CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
351 | 2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 11 | 11 | |
352 | 2001 | Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfaces | Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG | Solid-State Electronics | 83 | 81 | |
353 | 2001 | Transistor | Chen, Young-Kai; Cho, Alfred Yi; Hobson, William Scott; Hong, Minghwei; Kuo, Jenn-Ming; Kwo, Jueinai Raynien; Murphy, Donald Winslow; Ren, Fan; MINGHWEI HONG | ||||
354 | 2001 | CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
355 | 2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
356 | 2001 | Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy | Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | |||
357 | 2001 | New phase formation of Gd2O3 films on GaAs (100) | Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
358 | 2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG | Applied Physics Letters | |||
359 | 2000 | Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd<inf>2</inf>O<inf>3</inf> on GaAs(001) | Nelson, E.J.; Woicik, J.C.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 12 | 10 | |
360 | 2000 | RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | |||
361 | 2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | MRS Proceedings | |||
362 | 2000 | First demonstration of GaAs CMOS | Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG | 2000 IEEE International Symposium on Compound Semiconductors | 14 | ||
363 | 2000 | in-V MOSFET Using Ga203/Gd203 As The Gate Oxide | Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG | Topical Workshop on Heterostructure Microelectronics | |||
364 | 2000 | [Morphological and ultrastructural observation of Blastocystis hominis] | He, Ni; Zhang, YQ; Hong, ML; Cong, Min; MINGHWEI HONG | Zhongguo ji sheng chong xue yu ji sheng chong bing za zhi= Chinese journal of parasitology & parasitic diseases | |||
365 | 2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
366 | 2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 83 | 81 | |
367 | 2000 | Neutron scattering on magnetic thin films: pushing the limits | Schreyer, A; Schmitte, T; Siebrecht, R; B{\\ o; MINGHWEI HONG | Journal of Applied Physics | |||
368 | 2000 | Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates | Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG | Surface and interface analysis | |||
369 | 2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
370 | 2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG | Applied Physics Letters | |||
371 | 2000 | Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositions | Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 16 | 15 | |
372 | 2000 | GaN electronics for high power, high temperature applications | Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG | Interface-Electrochemical Society | |||
373 | 2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Applied Physics Letters | 268 | 248 | |
374 | 2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | |||
375 | 2000 | Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd̃ 2Õ 3 on GaAs (001) | Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
376 | 2000 | STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001) | Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
377 | 2000 | Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100) | Steiner, C.; Bolliger, B.; Erbudak, M.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 10 | 10 | |
378 | 2000 | Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
379 | 2000 | Structural modifications of the Gd 2 O 3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review B | |||
380 | 2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | |||
381 | 2000 | Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substrates | Bolliger, B.; Erbudak, M.; Hong, M.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; MINGHWEI HONG | Surface and Interface Analysis | 8 | ||
382 | 2000 | GaAs MOSFET-Achievements and Challenges M. Hong, YC Wang, F. Ren (,), JP Mannaerts, J. Kwo, AR Kortan, JN Baillargeon, and AY Cho Bell Laboratories, Lucent Technologies, Murray Hill, NJ | Hong, M; MINGHWEI HONG | SOTAPOCS XXXII | |||
383 | 1999 | Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG | Science | 404 | 390 | |
384 | 1999 | Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | MRS Proceedings | |||
385 | 1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | |||
386 | 1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electronics Letters | |||
387 | 1999 | Article comprising an oxide layer on GAN | Hobson, William Scott; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | ||||
388 | 1999 | The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation | Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG | MRS Proceedings | |||
389 | 1999 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETs | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Electronics Letters | 18 | 18 | |
390 | 1999 | STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3 (Gd2O3)/GaAs | Tu, LW; Lee, YC; Lee, KH; Lai, CM; Lo, I; Hsieh, KY; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
391 | 1999 | Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3 (Gd2O3)/GaAs | Tu, LW; Lee, YC; Lee, KH; Lai, CM; Lo, I; Hsieh, KY; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
392 | 1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG | Applied Physics Letters | |||
393 | 1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
394 | 1999 | Semiconductor-insulator interfaces | Hong, M; Liu, CT; Reese, H; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | |||
395 | 1999 | Structure of epitaxial Gd 2 O 3 films grown on GaAs (100) | Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG | Physical Review B | |||
396 | 1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electron Device Letters, IEEE | |||
397 | 1999 | Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG | MRS Proceedings | |||
398 | 1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | IEEE Electron Device Letters | 60 | 57 | |
399 | 1999 | Structure of Single-Crystal Gd 2 O 3 Films on GaAs (100) | Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG | MRS Proceedings | |||
400 | 1999 | Gallium-gadolinium oxide gate oxide etch stop layer | Cho, Alfred Yi; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | ||||
401 | 1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG | Applied Physics Letters | 79 | 80 | |
402 | 1999 | Article comprising an oxide layer on a GaAs-based semiconductor body | Hong, Minghwei; Kwo, Jueinai Raynien; Murphy, Donald Winslow; MINGHWEI HONG | ||||
403 | 1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | |||
404 | 1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | |||
405 | 1998 | GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide | Kim, S-J; Park, J-W; Hong, M; Mannaerts, JP; MINGHWEI HONG | Circuits, Devices and Systems, IEE Proceedings | |||
406 | 1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG | Applied Physics Letters | |||
407 | 1998 | Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article | Hong, Minghwei; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Passlack, Matthias; Ren, Fan; Zydzik, George John; MINGHWEI HONG | ||||
408 | 1998 | Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG | MRS Proceedings | |||
409 | 1998 | Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells | Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG | IEEE Journal of Quantum Electronics | |||
410 | 1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
411 | 1998 | GaAs MOSFET using MBE-grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate oxide | Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | IEE Proceedings: Circuits, Devices and Systems | 5 | 5 | |
412 | 1998 | Metal Contact On Nitride Based Materials | Ren, E; Abernathy, CR; Shurman, M; Hong, M; Pearton, SJ; Lothian, JR; MINGHWEI HONG | MRS Proceedings | |||
413 | 1998 | Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG | Solid-State Electronics | |||
414 | 1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
415 | 1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics Letters | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; MINGHWEI HONG | ||||
416 | 1998 | Effect of temperature on Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG | Applied Physics Letters | 217 | 209 | |
417 | 1998 | Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Y; Hong, M; Kuo, J; Mannaerts, J; Kwo, J; Tsai, H; Krajewski, J; Chen, Y; Cho, A; MINGHWEI HONG | IEEE International Electron Devices Meeting | 11 | ||
418 | 1998 | Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance | Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | 6 | 6 | |
419 | 1998 | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG | IEEE Journal of Quantum Electronics | 2 | 2 | |
420 | 1998 | NaCl: OH- color center laser modelocked by a novel bonded saturable Bragg reflector | Mozdy, EJ; Jaspan, MA; Zhu, Zuhua; Lo, Yu-hwa; Pollock, CR; Bhat, R; Hong, Minghwei; MINGHWEI HONG | Optics communications | |||
421 | 1997 | Wet Chemical and Plasma Etching of Ga2 O 3 (Gd2 O 3) | Ren, F; Hong, M; Mannaerts, JP; Lothian, JR; Cho, AY; MINGHWEI HONG | Journal of the Electrochemical Society | |||
422 | 1997 | Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions | Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG | Journal of Applied Physics | |||
423 | 1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG | Electrochemical Society ( ECS ) Proceedings | |||
424 | 1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | |||
425 | 1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | |||
426 | 1997 | Dielectrics for GaN based MIS-diodes | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG | MRS Proceedings | 5 | ||
427 | 1997 | Ga2O3/GaAs depletion mode MOSFET | Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Workshop on Native Oxides of Compound semiconductors | |||
428 | 1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Solid-State Electronics | 167 | 153 | |
429 | 1997 | Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces | Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG | Journal of Crystal Growth | |||
430 | 1997 | Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfaces | Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG | Journal of Crystal Growth | 73 | 68 | |
431 | 1997 | Wet chemical and plasma etching of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) | Ren, F.; Hong, M.; Mannaerts, J.P.; Lothian, J.R.; Cho, A.Y.; MINGHWEI HONG | Journal of the Electrochemical Society | 27 | 24 | |
432 | 1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG | IEEE Transactions on Electron Devices | |||
433 | 1997 | Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range | Christenson, GL; Tran, ATTD; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
434 | 1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |
435 | 1996 | Strain relaxation in Fe3 (Al, Si)/GaAs: An x-ray scattering study | Noh, DY; Hwu, Y; Je, JH; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
436 | 1996 | Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy | Passlack, M; Hong, M; MINGHWEI HONG | MRS Proceedings | 6 | ||
437 | 1996 | Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy | Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
438 | 1996 | Coupled in-plane and vertical-cavity laser 1 x N routing switches | Shire, DB; Tang, CL; Hong, M; Wynn, JD; MINGHWEI HONG | IEEE on Photonics Technology Letters | |||
439 | 1996 | Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Opila, Robert L; Ren, Fan; MINGHWEI HONG | Applied Physics Letters | |||
440 | 1996 | C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | |||
441 | 1996 | Vertical cavity semiconductor laser | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; Vakhshoori, Daryoosh; MINGHWEI HONG | ||||
442 | 1996 | Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates | Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG | International Electron Devices Meeting, 1996 | |||
443 | 1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |
444 | 1996 | Thermodynamic and photochemical stability of low interface state density Ga<inf>2</inf>O<inf>3</inf>-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG | Applied Physics Letters | 26 | 29 | |
445 | 1996 | Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 2 | 2 | |
446 | 1996 | In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric | Tu, L Wu; Schubert, EF; Hong, M; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | |||
447 | 1996 | GaAs surface passivation using in-situ oxide deposition | Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG | Applied Surface Science | 19 | 18 | |
448 | 1996 | Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
449 | 1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
450 | 1995 | High-performance InGaAs photodetectors on Si and GaAs substrates | Ejeckam, FE; Chua, CL; Zhu, ZH; Lo, YH; Hong, M; Bhat, R; MINGHWEI HONG | Applied Physics Letters | |||
451 | 1995 | X-ray-scattering studies of the interfacial structure of Au/GaAs | Noh, DY; Hwu, Y; Kim, HK; Hong, M; MINGHWEI HONG | Physical Review B | |||
452 | 1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | |||
453 | 1995 | Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contacts | Hong, M; Vakhshoori, D; Mannaerts, JP; Hsieh, Y-F; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
454 | 1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; Hong, M; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG | Applied Physics Letters | |||
455 | 1995 | New frontiers of molecular beam epitaxy with in-situ processing | Hong, M; MINGHWEI HONG | Journal of Crystal Growth | |||
456 | 1995 | Erratum:‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’[Appl. Phys. Lett. 66, 736 (1995)] | Huang, Man-fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Applied Physics Letters | |||
457 | 1995 | Coherent oscillations in semiconductor microcavities | Wang, Hailin; Shah, Jagdeep; Damen, TC; Jan, WY; Cunningham, JE; Hong, M; Mannaerts, JP; MINGHWEI HONG | Physical Review B | |||
458 | 1995 | GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES | Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG | Compound Semiconductors, 1994 | |||
459 | 1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | |||
460 | 1995 | Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs | Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG | Journal of Applied Physics | |||
461 | 1995 | Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures | Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG | Journal of Applied Physics | |||
462 | 1995 | Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain | Huang, Man-fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Applied Physics Letters | |||
463 | 1995 | RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH | Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG | Compound Semiconductors 1994 | |||
464 | 1995 | Low-threshold 1.57-$μ$m VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror | Chua, CL; Zhu, ZH; Lo, YH; Bhat, R; Hong, Mingyi; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
465 | 1994 | Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells | Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
466 | 1994 | Dielectric properties of electron-beam deposited Ga2O3 films | Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG | Applied Physics Letters | |||
467 | 1994 | In situ nonalloyed ohmic contacts to p-GaAs | Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
468 | 1994 | Buried heterostructure laser diodes fabricated using in situ processing | Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
469 | 1994 | Temperature dependence of resonant x-ray magnetic scattering in holmium | Helgesen, G; Hill, JP; Thurston, TR; Gibbs, Doon; Kwo, J; Hong, M; MINGHWEI HONG | Physical Review B | |||
470 | 1994 | In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication | Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG | Journal of electronic materials | |||
471 | 1994 | Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth | Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG | Journal of Applied Physics | |||
472 | 1994 | Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films | MINGHWEI HONG | Applied Physics Letters | |||
473 | 1994 | Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process | Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG | MRS Proceedings | |||
474 | 1994 | Low pressure etching outer stack and peripheral active layer; epitaxial regrowth of lower refractive index material | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; MINGHWEI HONG | ||||
475 | 1994 | Zone lasers | Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG | Applied Physics Letters | |||
476 | 1994 | AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum Anneal | Hong, M; Mannaerts, JP; Grober, LH; Thiel, FA; Freund, RS; MINGHWEI HONG | MRS Proceedings | |||
477 | 1994 | Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs | Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
478 | 1994 | Process for removing surface contaminants from III-V semiconductors | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; Mannaerts, Joseph P; MINGHWEI HONG | ||||
479 | 1994 | ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique | Grober, Louise H; Hong, M; Grober, RD; Mannaerts, JP; Freund, RS; MINGHWEI HONG | MRS Proceedings | |||
480 | 1993 | Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth | Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
481 | 1993 | Vacuum integrated fabrication of vertical-cavity surface emitting lasers | Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
482 | 1993 | Method of making an article comprising a periodic heteroepitaxial semiconductor structure | Chen, Young-Kai; Hong, Minghwei; Mannaerts, Joseph P; Wu, Ming-Chiang; MINGHWEI HONG | ||||
483 | 1993 | Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) | Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG | Journal of Applied Physics | |||
484 | 1993 | Semiconductor surface emitting laser having enhanced optical confinement | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; MINGHWEI HONG | ||||
485 | 1993 | 980nm Zone Lasers | Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG | IEEE International Electron Devices Meeting | |||
486 | 1993 | Single mode, edge-emitting | Chen, Young-Kai; Hong, Minghwei; Wu, Ming-Chiang; MINGHWEI HONG | ||||
487 | 1993 | GaAs surface reconstruction obtained using a dry process | Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG | Journal of Applied Physics | |||
488 | 1993 | Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes | Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG | MRS Proceedings | |||
489 | 1993 | Ultralow timing jitter in electrically gain-switched vertical cavity surface emitting lasers | Pepeljugoski, P; Lin, J; Gamelin, J; Hong, M; Lau, KY; MINGHWEI HONG | Applied Physics Letters | |||
490 | 1993 | Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy | Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG | Applied Physics Letters | |||
491 | 1993 | Hydrogen plasma processing of GaAs and AlGaAs | Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
492 | 1993 | Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching | Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG | Applied Physics Letters | |||
493 | 1993 | Relative intensity noise of vertical cavity surface emitting lasers | Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J; Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
494 | 1993 | Low resistance and large current range CW single-mode top surface-emitting laser with small window | Du, Guotong; Zhao, Fanghai; Zhang, Xiaobo; Gao, Dingsan; Lin, J; Gamelin, JK; Wu, B; Wang, S; Hong, Minghwei; Mannaerts, JP; MINGHWEI HONG | Optical and quantum electronics | 0 | 0 | |
495 | 1992 | Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence | Chen, Young-Kai; Hong, Minghwei; Wu, Ming-Chiang; MINGHWEI HONG | ||||
496 | 1992 | Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001) | Liou, SH; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG | Journal of Applied Physics | |||
497 | 1992 | Vertical microcavity surface-emitting ring laser | Lin, J; Gamelin, JK; Du, GT; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
498 | 1992 | MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers | Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG | Journal of electronic materials | |||
499 | 1992 | Vertical-cavity surface-emitting lasers fabricated by vacuum integrated processing | Choquette, Kent D; Hasnain, G; Mannaerts, JP; Wynn, JD; Wetzel, RC; Hong, M; Freund, RS; Leibenguth, RE; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
500 | 1992 | Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasers | Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
501 | 1992 | In situ deposition of Au on plasma-prepared GaAs substrates | Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG | Journal of electronic materials | |||
502 | 1992 | Structural considerations in the optimal design of surface-emitting laser diodes | Gamelin, J; Hong, M; Fischer, RJ; Lin, J; Wang, YH; Mannaerts, JP; Cho, AY; Wang, S; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
503 | 1992 | Ultrafast (up to 39 GHz) relaxation oscillation of vertical cavity surface emitting laser | Lin, J; Gamelin, JK; Lau, KY; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
504 | 1992 | Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy | Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG | Journal of Materials Science: Materials in Electronics | |||
505 | 1992 | Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy | Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG | Applied Physics Letters | |||
506 | 1992 | An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes | Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG | Journal of electronic materials | |||
507 | 1992 | Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures | Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG | Applied Physics Letters | |||
508 | 1992 | TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS | Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG | Institute of Physics Conference Series | |||
509 | 1991 | Blue-green surface-emitting second-harmonic generators on (111) B GaAs | Vakhshoori, D; Fischer, RJ; Hong, M; Sivco, DL; Zydzik, GJ; Chu, GNS; Cho, AY; MINGHWEI HONG | Applied Physics Letters | |||
510 | 1991 | Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxy | Choquette, Kent D; Hong, M; Freund, Robert S; Mannaerts, JP; Wetzel, Robert C; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
511 | 1991 | MBE growth and properties of Fe 3 (Al, Si) on GaAs (100) | Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG | Journal of Crystal Growth | |||
512 | 1991 | Magnetic rare earth superlattices | Majkrzak, CF; Kwo, J; Hong, M; Yafet, Y; Gibbs, Doon; Chien, CL; Bohr, Jakob; MINGHWEI HONG | Advances in Physics | |||
513 | 1991 | Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors | Hong, M; Tu, LW; Gamelin, J; Wang, YH; Fischer, RJ; Schubert, EF; Tai, K; Hasnain, G; Mannaerts, JP; Weir, BE; others; MINGHWEI HONG | Journal of crystal growth | |||
514 | 1991 | Interaction of energetic ions with inhomogeneous solids | Bode, M; Ourmazd, A; Cunningham, J; Hong, M; MINGHWEI HONG | Physical Review Letters | |||
515 | 1991 | Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates | Wang, YH; Tai, K; Hsieh, YF; Chu, SNG; Wynn, JD; Hong, M; Fischer, RJ; Cho, AY; MINGHWEI HONG | Journal of Crystal Growth | |||
516 | 1991 | Short pulse generation by electrical gain switching of vertical cavity surface emitting laser | Lin, James; Gamelin, JK; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
517 | 1991 | GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m | Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | |||
518 | 1991 | Infrared intersubband photoinduced charge polarization in asymmetrical quantum wells | Levine, BF; Gunapala, SD; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
519 | 1991 | Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputtering | Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | |||
520 | 1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | |||
521 | 1991 | In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US) | Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG | ||||
522 | 1991 | A periodic index separate confinement heterostructure quantum well laser | Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG | Applied Physics Letters | |||
523 | 1990 | Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors | Hasnain, G; Tai, K; Wynn, JD; Wang, YH; Fischer, RJ; Hong, M; Wier, BE; Zydzik, GJ; Mannaerts, JP; Gamelin, J; others; MINGHWEI HONG | Electronics Letters | |||
524 | 1990 | Magnetic properties of Gd/Dy superlattices: Experiment and theory | Camley, RE; Kwo, J; Hong, M; Chien, CL; MINGHWEI HONG | Physical Review Letters | |||
525 | 1990 | Use of hybrid reflectors to achieve low thresholds in all molecular-beam epitaxy grown vertical cavity surface emitting laser diodes | Fischer, RJ; Tai, K; Hong, M; V; enberg, JM; Ying, JY; Mannaerts, JP; Cho, AY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | |||
526 | 1990 | Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | |||
527 | 1990 | Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | |||
528 | 1990 | Vertical-cavity surface-emitting lasers with semitransparent metallic mirrors and high quantum efficiencies | Tu, Li-Wei; Schubert, E Fred; Kopf, Rose F; Zydzik, George J; Hong, Minghwei; Chu, SN George; Mannaerts, Joseph P; MINGHWEI HONG | Applied Physics Letters | |||
529 | 1990 | GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes | Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG | Photonics Technology Letters, IEEE | |||
530 | 1989 | Rf-diode sputtered amorphous rare earth-transition metal films: Microstructure, stability, and magneto-optical properties | Shieh, H-PD; Hong, M; Nakahara, S; MINGHWEI HONG | Thin Solid Films | |||
531 | 1989 | Materials and tunneling characteristics of HTSC Y sub (1) Ba sub (2) Cu sub (3) O sub (7-x) thin films by molecular beam epitaxy. | Kwo, J; Hong, M; Fulton, T; MINGHWEI HONG | SPIE Conference on Processing of Films for High T sub (c) Superconducting Electronics | |||
532 | 1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Physica C: Superconductivity | |||
533 | 1989 | Diffraction studies of rare earth metals and superlattices | Bohr, J; Gibbs, Doon; Axe, JD; Moncton, DE; d'Amico, KL; Majkrzak, CF; Kwo, J; Hong, M; Chien, CL; Jensen, J; MINGHWEI HONG | Physica B: Condensed Matter | |||
534 | 1989 | Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering | Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG | Thin Solid Films | |||
535 | 1989 | Far-infrared transmission of Bi 2 Sr 2 CaCu 2 O 8 films | Hughes, RA; Timusk, T; Cooper, SL; Thomas, GA; Yeh, JJ; Hong, M; MINGHWEI HONG | Physical Review B | |||
536 | 1989 | Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substrates | Chen, CH; Hong, M; Werder, DJ; Kwo, J; Liou, Sy\\_Hwang; Bacon, DD; MINGHWEI HONG | Applied Physics Letters | |||
537 | 1989 | Electrical response of superconducting YBa2Cu3O7- $δ$ to light | Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG | Applied Physics Letters | |||
538 | 1989 | Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 Å Bi-Sr-Ca-Cu oxide thin films | Yeh, J-J; DiCenzo, SB; Hartford Jr, EH; Hong, M; Felder, RJ; MINGHWEI HONG | Applied Physics Letters | |||
539 | 1989 | In situ formation of YBa 2 Cu 3 O/sub x/thin films by physical sputtering | Yeh, J; Hong, M; Felder, RJ; MINGHWEI HONG | ||||
540 | 1989 | SINGLE-PHASE HIGH Tc SUPERCONDUCTING | Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG | Cosmic abundances of matter 1988 | |||
541 | 1989 | Far-infrared transmission of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 films | Hughes, RA; Timusk, T; Cooper, SL; Thomas, GA; Yeh, JJ; Hong, M; MINGHWEI HONG | Physical Review (Section) B: Condensed Matter | |||
542 | 1989 | Electrical response of superconducting YBa 2 Cu 3 O/sub 7-//sub $δ$/to light | Brocklesby, WS; Monroe, D; Levi, AFJ; Hong, M; Liou, SH; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG | ||||
543 | 1989 | Insitu formation of YBa2Cu3Ox thin films by physical sputtering | Yeh, J-J; Hong, M; Felder, RJ; MINGHWEI HONG | Applied Physics Letters | |||
544 | 1989 | PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 Ox | Ford, WK; erson, J; Rubenacker, GV; Drumheller, John E; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG | Journal of Materials Research | |||
545 | 1989 | Physical processing effects on polycrystalline YBa 2 Cu 3 O/sub x | Ford, WK; erson, J; Rubenacker, GV; Drumheller, JE; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG | ||||
546 | 1989 | Growth of 200 Å superconducting Bi-Sr-Ca-Cu oxide thin films | Yeh, J-J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
547 | 1989 | Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation | Bode, M; Ourmazd, A; Rentschler, JA; Hong, M; Feldman, LC; Mannaerts, JP; MINGHWEI HONG | MRS Proceedings | |||
548 | 1988 | Ion beam patterning of spin-on metalorganic precursors and formation of high Tc superconductors | Gross, ME; Brown, WL; DiCenzo, SB; Hartford Jr, EH; Yeh, JJ; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
549 | 1988 | Scanning electron microscope identification of weak links in superconducting thin films | Monroe, Don; Brocklesby, WS; Farrow, RC; Hong, M; Liou, Sy\\_Hwang; MINGHWEI HONG | Applied Physics Letters | |||
550 | 1988 | Magnetic rare-earth superlattices | Majkrzak, CF; Gibbs, Doon; B{\\ o; MINGHWEI HONG | Journal of Applied Physics | |||
551 | 1988 | Magnetic superlattices | Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Fleming, RM; DiSalvo, FJ; Waszczak, JV; Majkrzak, CF; Gibbs, D; Goldmann, AI; others; MINGHWEI HONG | Le Journal de Physique Colloques | |||
552 | 1988 | Ion-beam-induced destruction of superconducting phase coherence in YBa 2 Cu 3 O 7- $δ$ | White, Alice E; Short, KT; Jacobson, DC; Poate, JM; Dynes, RC; Mankiewich, PM; Skocpol, WJ; Howard, RE; Anzlowar, M; Baldwin, KW; others; MINGHWEI HONG | Physical Review B | |||
553 | 1988 | Tunneling characteristics of internal josephson junctions in Y Ba 2 Cu 3 O 7- $δ$ thin films | Brocklesby, WS; Monroe, Don; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Fisanick, GJ; Mankiewich, PM; Howard, RE; MINGHWEI HONG | Physical Review B | |||
554 | 1988 | Electronic excitations of the Y Ba 2 Cu 3 O 7- x superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, Sy\\_Hwang; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physical Review B | |||
555 | 1988 | Electronic excitations of the YBa/sub 2/Cu/sub 3/O/sub 7/. sqrt./sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physics Review B: Condensed Matter | |||
556 | 1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y2Ba5Cu7Ox films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | Applied Physics Letters | |||
557 | 1988 | High critical current superconducting Bi-Sr-Ca-Cu-O films by sputtering | Hong, M; Kwo, J; Yeh, J-J; MINGHWEI HONG | Journal of Crystal Growth | |||
558 | 1988 | Electronic excitations of the YBa 2 Cu 3 O 7√/sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | ||||
559 | 1988 | CW laser etching of Ba/sub 2/YCu/sub 3/O/sub 7/films | Fisanick, GJ; Brasen, D; Opila, R; Moore, R; Mankiewich, P; Skocpol, W; Howard, RE; Hong, M; O'Bryan, HM; MINGHWEI HONG | AIP Conference Proceedings | |||
560 | 1988 | Tl-Ba-Ca-Cu-O superconducting films by DC diode sputtering. | Liou, SH; Hong, M; Grader, GS; Bacon, DD; Kwo, J; Davidson, B; MINGHWEI HONG | Materials Research Society 1988 Fall Meeting | |||
561 | 1988 | Thin film research on high T/sub c/superconductors | Hong, M; Kwo, J; Chen, CH; Fleming, RM; Liou, SH; Gross, ME; Davidson, BA; Chen, HS; Nakahara, S; Boone, T; others; MINGHWEI HONG | AIP Conference Proceedings | |||
562 | 1988 | In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | ||||
563 | 1988 | Growth and characterizations of Bi-Sr-Ca-Cu-O superconducting thin films by rf magnetron sputtering. | Yeh, J-J; Hong, M; Kwo, J; Kammlot, GW; Nassau, K; Miller, A; Davidson, B; MINGHWEI HONG | Materials Research Society 1988 Fall Meeting | |||
564 | 1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y 2 Ba 5 Cu 7 O/sub x/films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | ||||
565 | 1988 | Incommensurate superlattice and 90° twist boundaries in the superconducting phase of Bi-Sr-Ca-Cu-O | Chen, CH; Werder, DJ; Liou, Sy\\_Hwang; Chen, HS; Hong, M; MINGHWEI HONG | Physical Review B | |||
566 | 1988 | High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; Hong, M; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others; MINGHWEI HONG | AIP Conference Proceedings | |||
567 | 1988 | Superconducting Tl-Ba-Ca-Cu-O films by sputtering | Hong, M; Liou, Sy\\_Hwang; Bacon, DD; Grader, GS; Kwo, J; Kortan, AR; Davidson, BA; MINGHWEI HONG | Applied Physics Letters | |||
568 | 1988 | Tunneling characteristics of internal Josephson junctions in YBa 2 Cu 3 O/sub 7-//sub $δ$/thin films | Brocklesby, WS; Monroe, D; Hong, M; Liou, SH; Kwo, J; Fisanick, GJ; Mankiewich, PM; Howard, RE; MINGHWEI HONG | ||||
569 | 1988 | Crystal structure of the 80 K superconductor YBa2Cu4O8 | Marsh, P; Fleming, RM; M; ich, ML; DeSantolo, AM; Kwo, J; MINGHWEI HONG | Nature | |||
570 | 1988 | Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Applied Physics Letters | |||
571 | 1988 | Properties of In Situ Superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy With an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; MINGHWEI HONG | Science and Technology of Thin Film Superconductors-Proceedings | |||
572 | 1988 | Y-Ba-Cu-O films by rf magnetron sputtering using single composite targets: Superconducting and structural properties | Liou, Sy\\_Hwang; Hong, M; Kwo, J; Davidson, BA; Chen, HS; Nakahara, S; Boone, T; Felder, RJ; MINGHWEI HONG | Applied Physics Letters | |||
573 | 1988 | Single-Phase High T sub c Superconducting Tl sub 2 Ba sub 2 Ca sub 2 Cu sub 3 O sub 10 Films | Hong, M; Kwo, J; Chen, CH; MINGHWEI HONG | High Tc Superconducting Thin Films, Devices and Applications | |||
574 | 1988 | Oxygen defect in YBa 2 Cu 3 O/sub x: An x-ray photoemission approach | Ford, WK; Chen, CT; erson, J; Kwo, J; Liou, SH; Hong, M; Rubenacker, GV; Drumheller, JE; MINGHWEI HONG | ||||
575 | 1988 | High temperature superconducting oxide films | Hong, Mingwei; Kwo, J Raynien; Chen, Cheng Hsuan; MINGHWEI HONG | IEEE Transactions on Components, Hybrids, and Manufacturing Technology | |||
576 | 1988 | Oxygen defect in YBa 2 Cu 3 O x: An x-ray photoemission approach | Ford, WK; Chen, CT; erson, J; Kwo, J; Liou, Sy\\_Hwang; Hong, M; Rubenacker, GV; Drumheller, JE; MINGHWEI HONG | Physical Review B | |||
577 | 1988 | Microstructure and stability of rf-diode sputtered GdTbFeCo thin films | Shieh, H-PD; Hong, M; Nakahara, S; MINGHWEI HONG | Journal of Applied Physics | |||
578 | 1988 | Microstructures of YBa2Cu3O7- x superconducting thin films grown on a SrTiO3 (100) substrate | Chen, CH; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
579 | 1988 | Superconducting properties of a 27-A phase of Ba-Y-Cu-O | M; ich, ML; DeSantolo, AM; Fleming, RM; Marsh, P; Nakahara, S; Sunshine, S; Kwo, J; Hong, M; Boone, T; Kometani, TY; others; MINGHWEI HONG | Physical Review B | |||
580 | 1988 | Versatile new metalorganic process for preparing superconducting thin films | Gross, ME; Hong, M; Liou, Sy\\_Hwang; Gallagher, PK; Kwo, J; MINGHWEI HONG | Applied Physics Letters | |||
581 | 1988 | Thallium-Based Superconducting Films by Sputtering Using a Single Target | Liou, SH; Hong, M; Kortan, AR; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | |||
582 | 1988 | Interlayer exchange in magnetic superlattices | Yafet, Y; Kwo, J; Hong, M; Majkrzak, CF; O¡¦Brien, T; MINGHWEI HONG | Journal of Applied Physics | |||
583 | 1987 | Epitaxial Films of High T c Oxide Superconductors Y 1 Ba 2 Cu 3 O 7 Grown on SrTiO 3 by Molecular Beam Epitaxy | Kwo, J; Hsieh, TC; Hong, M; Fleming, RM; Liou, SH; Davidson, BA; MINGHWEI HONG | MRS Proceedings | |||
584 | 1987 | Break-junction tunneling measurements of the high-T c superconductor Y 1 Ba 2 Cu 3 O 9- $δ$ | Morel; , John; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, Sy\\_Hwang; MINGHWEI HONG | Physical Review B | |||
585 | 1987 | Antiphase domain boundaries in the superconducting phase of the Y-Ba-Cu-O system | Chen, CH; Werder, DJ; Liou, Sy\\_Hwang; Kwo, JR; Hong, M; MINGHWEI HONG | Physical Review B | |||
586 | 1987 | Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox | Ekin, JW; Braginski, Alex; er I; Panson, AJ; Janocko, MA; Capone II, DW; Zaluzec, NJ; Fl; ermeyer, B; De Lima, OF; Hong, M; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | |||
587 | 1987 | Break-junction tunneling measurements of the high-T/sub c/superconductor Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 9-//sub delta | Morel; , J; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, SH; MINGHWEI HONG | Physics Review B: Condensed Matter | |||
588 | 1987 | Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7- x films prepared by molecular-beam epitaxy | Kwo, J; Hsieh, TC; Fleming, RM; Hong, M; Liou, Sy\\_Hwang; Davidson, BA; Feldman,; LC; MINGHWEI HONG | Physical Review B | |||
589 | 1987 | Synthetic magnetic rare-earth Dy-Y superlattices | Hong, M; Fleming, RM; Kwo, J; Schneemeyer, LF; Waszczak, JV; Mannaerts, JP; Majkrzak, CF; Gibbs, Doon; Bohr, J; MINGHWEI HONG | Journal of applied physics | |||
590 | 1987 | Superconducting Y-Ba-Cu-O oxide films by sputtering | Hong, M; Liou, Sy\\_Hwang; Kwo, J; Davidson, BA; MINGHWEI HONG | Applied Physics Letters | |||
591 | 1987 | Low magnetic field superconducting phase diagram of the high-Tc YBa2Cu3O9-$δ$ | Drumheller, John E; Rubenacker, Gerald V; Ford, WK; erson, J; Hong, M; Liou, SH; Kwo, J; Chen, CT; MINGHWEI HONG | Solid state communications | |||
592 | 1987 | Structural and superconducting properties of orientation-ordered Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub x/films prepared by molecular-beam epitaxy | Kwo, J; Hsieh, TC; Fleming, RM; Hong, M; Liou, SH; Davidson, BA; Feldman, ALC; MINGHWEI HONG | Physics Review B: Condensed Matter | |||
593 | 1987 | A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin films | Gross, ME; Hong, M; Liou, S; Gallagher, PK; MINGHWEI HONG | MRS Proceedings | |||
594 | 1987 | Polarized neutron diffraction studies of Gd-Y synthetic superlattices | Majkrzak, CF; Cable, J Wesley; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Waszczak, JV; Grimm, H; Vettier, C; MINGHWEI HONG | Journal of Applied Physics | |||
595 | 1987 | Magneto-optical study of uranium additions to amorphous TbxFe1- x | Dillon Jr, JF; van Dover, RB; Hong, M; Gyorgy, EM; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | |||
596 | 1987 | Magneto-optical study of uranium additions to amorphous Tb/sub x/Fe/sub 1-//sub x | Dillon Jr, JF; van Dover, RB; Hong, M; Gyorgy, EM; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | |||
597 | 1987 | Low magnetic field superconducting phase diagram of the high-Tsub (c) YBa 2 Cu 3 Osub (9-$δ$) | Drumheller, JE; Rubenacker, GV; Ford, WK; erson, J; Hong, M; Liou, SH; Kwo, J; Chen, CT; MINGHWEI HONG | ||||
598 | 1987 | Magneto-optical study of uranium additions to amorphous Tb <inf>x</inf>Fe<inf>1-x</inf> | Dillon Jr.; J.F.; Van Dover, R.B.; Hong, M.; Gyorgy, E.M.; Albiston, S.D.; MINGHWEI HONG | Journal of Applied Physics | 8 | 6 | |
599 | 1987 | Modulated magnetic properties in synthetic rare-earth Gd-Y superlattices | Kwo, J; Hong, M; DiSalvo, FJ; Waszczak, JV; Majkrzak, CF; MINGHWEI HONG | Physical Review B | |||
600 | 1987 | Break-junction tunneling measurements of the high-T/sub c/superconductor Y 1 Ba 2 Cu 3 O/sub 9-//sub $δ$ | Morel; , J; Ekin, JW; Goodrich, LF; Capobianco, TE; Clark, AF; Kwo, J; Hong, M; Liou, SH; MINGHWEI HONG | ||||
601 | 1987 | Raman detection of the superconducting gap in Ba-Y-Cu-O superconductors | Lyons, KB; Liou, Sy\\_Hwang; Hong, M; Chen, HS; Kwo, J; Negran, TJ; MINGHWEI HONG | Physical Review B | |||
602 | 1987 | tors implantafson of sputtered Y-Ba= Cu-0 films | Kwo, I{\\ U; MINGHWEI HONG | Physics Review Letter | |||
603 | 1987 | Anomalous aging characteristics of amorphous GdCo films | Hong, M; Bacon, DD; Nakahara, S; MINGHWEI HONG | Journal of Applied Physics | |||
604 | 1986 | Magnetic anisotropy in dc diode getter sputtered GdCo films—How important is the argon content in the films? | Bacon, DD; Hong, M; Gyorgy, EM; Gallagher, PK; Nakahara, S; Feldman, LC; MINGHWEI HONG | Applied Physics Letters | |||
605 | 1986 | Magnetic properties of single crystal rare-earth Gd-Y superlattices | Kwo, J; Gyorgy, EM; DiSalvo, FJ; Hong, M; Yafet, Y; McWhan, DB; MINGHWEI HONG | Journal of magnetism and magnetic materials | |||
606 | 1986 | dc magnetron-and diode-sputtered polycrystalline Fe and amorphous Tb (FeCo) films: Morphology and magnetic properties | Hong, M; Gyorgy, EM; Van Dover, RB; Nakahara, S; Bacon, DD; Gallagher, PK; MINGHWEI HONG | Journal of Applied Physics | |||
607 | 1986 | CoCr thin film prepared by magnetron Co-sputtering | Hong, M; van Dover, RB; V; enberg, JM; Bacon, DD; MINGHWEI HONG | Journal of magnetism and magnetic materials | |||
608 | 1986 | Study of liquid-infiltrated Nb-Sn superconducting composite wire by specific-heat measurements | Hellman, F; Hong, M; Hull Jr, GW; Geballe, TH; MINGHWEI HONG | Journal of applied physics | |||
609 | 1986 | Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice | Majkrzak, CF; Cable, JW; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Waszczak, JV; Vettier, C; MINGHWEI HONG | Physical Review Letters | |||
610 | 1986 | Effect of oxidation on the magnetic properties of unprotected TbFe thin films | Van Dover, RB; Gyorgy, EM; Frankenthal, RP; Hong, M; Siconolfi, DJ; MINGHWEI HONG | Journal of Applied Physics | |||
611 | 1986 | Microstructures of thin sputtered amorphous Tb0. 26Fe0. 74 and polycrystalline Fe films | Nakahara, S; Hong, M; van Dover, RB; Gyorgy, EM; Bacon, DD; MINGHWEI HONG | Journal of Vacuum Science & Technology A | |||
612 | 1986 | Microstructure of magnetron co-sputtered CoCr thin films | Hong, M; Nakahara, S; van Dover, RB; Boone, T; MINGHWEI HONG | Applied Physics Letters | |||
613 | 1986 | Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium | Kwo, J; Hong, M; Nakahara, S; MINGHWEI HONG | Applied Physics Letters | |||
614 | 1985 | Further investigations of the solid-liquid reaction and high-field critical current density in liquid-infiltrated Nb-Sn superconductors | Hong, M; Maher, DM; Ellington, MB; Hellman, F; Geballe, TH; Ekin, JW; Holthuis, JT; MINGHWEI HONG | IEEE Transactions on Magnetics | |||
615 | 1985 | Structural and magnetic properties of single crystal rare earth Gd-Y superlattices | Kwo, J; McWhan, DB; Hong, M; Gyorgy, EM; DiSalvo, FJ; MINGHWEI HONG | MRS Proceedings | |||
616 | 1985 | New phase formation and superconductivity in reactively diffused Nb 3 Sn multilayer films | V; enberg, JM; Gurvitch, M; Hamm, RA; Hong, M; Rowell, JM; MINGHWEI HONG | IEEE Transactions on Magnetics | |||
617 | 1985 | Microstructures of Thin Sputtered Amorphous Tb sub 0. 26 Fe sub 0. 74 and Polycrystalline Iron Films | Nakahara, S; Hong, M; van Dover, RB; Gyorgy, EM; Bacon, DD; MINGHWEI HONG | J. Vacuum Science and Technology A | |||
618 | 1985 | Aging effects on amorphous Tb-transition-metal films prepared by diode and magnetron sputtering | Hong, M; Bacon, DD; Van Dover, RB; Gyorgy, EM; Dillon Jr, JF; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | |||
619 | 1985 | Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices | Kwo, J; Gyorgy, EM; McWhan, DB; Hong, M; DiSalvo, FJ; Vettier, C; Bower, JE; MINGHWEI HONG | Physical Review Letters | |||
620 | 1985 | Intrinsic anisotropy of Tb-Fe films prepared by magnetron Co sputtering | Van Dover, RB; Hong, M; Gyorgy, EM; Dillon Jr, JF; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | |||
621 | 1985 | Properties of rare-earth metal superlattice grown by molecular-beam epitaxy | Kwo, J; Gyorgy, EM; Hong, M; Lowe, WP; McWhan, DB; Superfine, R; MINGHWEI HONG | Journal of Applied Physics | |||
622 | 1985 | Reactive diffusion and superconductivity of Nb3Al multilayer films | V; enberg, JM; Hong, M; Hamm, RA; Gurvitch, M; MINGHWEI HONG | Journal of applied physics | |||
623 | 1984 | dc getter sputtered amorphous GdCo films: Magnetic anisotropy and in-depth chemical composition | Hong, M; Gyorgy, EM; Bacon, DD; MINGHWEI HONG | Applied Physics Letters | |||
624 | 1984 | Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy | Kwo, J; McWhan, DB; Hong, M; Gyorgy, EM; Feldman, LC; Cunningham, JE; MINGHWEI HONG | MRS Proceedings | |||
625 | 1984 | Intrinsic Anisotropy of Tb-Fe Films Prepared by Magnetron Cobalt Sputtering | van Dover, RB; Hong, M; Gyorgy, EM; Dillon Jr, JF; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | |||
626 | 1984 | Electromechanical and metallurgical properties of liquid-infiltration Nb-Ta/Sn multifilamentary superconductor | Ekin, JW; Hong, M; MINGHWEI HONG | Applied Physics Letters | |||
627 | 1983 | Superconducting properties of a liquid-infiltration Nb-Nb3Sn composite formed during a low-temperature reaction | Hong, M; Hull Jr, GW; Holthuis, JT; Hassenzahl, WV; Hong, JM; MINGHWEI HONG | Applied Physics Letters | |||
628 | 1983 | The microstructure and critical current characteristic of a bronze-processed multifilamentary Nb3Sn superconducting wire | Wu, IW; Dietderich, DR; Holthuis, JT; Hong, M; Hassenzahl, WV; Morris Jr, JW; MINGHWEI HONG | Journal of applied physics | |||
629 | 1983 | Multifilamentary superconducting (NbTa)-Sn composite wire by solid-liquid reaction for possible application above 20 tesla | Hong, M; Hull, GW; Fuchs, EO; Holthuis, JT; MINGHWEI HONG | Materials Letters | |||
630 | 1983 | Multifilamentary Nb-Nb 3 Sn composite by liquid infiltration method: Superconducting, metallurgical, and mechanical properties | Hong, M; Hull Jr, GW; Holthuis, JT; Hassenzahl, WV; Ekin, JW; MINGHWEI HONG | IEEE Transactions on Magnetics | |||
631 | 1982 | AN INVESTIGATION ON THE ENHANCEMENT OF THE CRITICAL CURRENT DENSITIES IN BRONZE-PROCESSED NB 3 SN, PAPER FROM ADVANCES IN CRYOGENIC ENGINEERING MATERIALS | HONG, M; WU, IW; MORRIS, JW; GILBERT, W; HASSENZAHL, WV; TAYLOR, C; MINGHWEI HONG | BOOKS | |||
632 | 1981 | THE CRYSTALLOGRAPHIC ORIENTATION OF Al5 v 3 | Wu, IW; Hong, M; Morris Jr, JW; MINGHWEI HONG | ||||
633 | 1981 | Microstructure and properties of A15 superconductors formed by direct precipitation | Hong, M; Deitderich, D; Wu, IW; Morris Jr, JW; MINGHWEI HONG | IEEE Transactions on Magnetics | |||
634 | 1981 | The crystallographic orientation of A15 V3Ga and Nb3Al precipitates in BCC matrices | Wu, I-W; Hong, M; Morris Jr, JW; MINGHWEI HONG | Applied Physics Letters | |||
635 | 1981 | The preferred habit of a tetragonal inclusion in a cubix matrix | Wen, SH; Kostlan, E; Hong, M; Khachaturyan, AG; Morris, JW; MINGHWEI HONG | Acta Metallurgica | |||
636 | 1980 | Direct solid-state precipitation-processed A15 (Nb3A1) superconducting material | Hong, M; Morris Jr, JW; MINGHWEI HONG | Applied Physics Letters | |||
637 | 1980 | Development of A-15 (V3Ga) superconducting material through controlled precipitation | Hong, M; Dietderich, D; Morris Jr, JW; MINGHWEI HONG | Journal of Applied Physics |