| 公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1 | 2024 | Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack | Kao, Chi Yi; Lin, Jin Cheng; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | | | |
2 | 2023 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO<inf>2</inf>for One-Time Programmable Application | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
3 | 2023 | Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation | Lin, Yu Cin; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | | |
4 | 2023 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
5 | 2023 | Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
6 | 2023 | Saturation of Transient Current Read at Millisecond-Scale in MOS Capacitor with Ultra-Thin Oxide when Switching | Huang, Sung Wei; JENN-GWO HWU | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 0 | 0 | |
7 | 2022 | Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
8 | 2022 | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges | Chen, Kung Chu; Lin, Kuan Wun; Huang, Sung Wei; Lin, Jian Yu; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
9 | 2022 | Fringing field induced current coupling in concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide | Chen J.-H; Chen K.-C; JENN-GWO HWU | AIP Advances | 1 | 1 | |
10 | 2022 | Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors | Lin K.-W; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
11 | 2022 | Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage | Chen K.-C; JENN-GWO HWU | IEEE Sensors Journal | 2 | 2 | |
12 | 2021 | Energy-Saving Logic Gates Utilizing Coupling Phenomenon between MIS(p) Tunneling Diodes | Chen J.H; Chen K.C; Hwu J.G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
13 | 2021 | Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge | Lin J.-Y; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
14 | 2021 | Role of Schottky barrier height modulation on the reverse bias current behavior of MIS(P) tunnel diodes | Chen K.-C; Lin K.-W; JENN-GWO HWU | IEEE Access | 2 | 2 | |
15 | 2021 | Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage with Biased Inner Gate | Huang C.-Y; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
16 | 2021 | Capacitance analysis of transient behavior improved metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate | Huang S.-W; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
17 | 2021 | Transient Current Enhancement in MIS Tunnel Diodes with Lateral Electric Field Induced by Designed High-Low Oxide Layers | Huang S.-W; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 | |
18 | 2020 | Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe | Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
19 | 2020 | Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode | Hsu, T.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
20 | 2020 | Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure | Yang, Y.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 4 | 4 | |
21 | 2020 | Edge-Etched Al<inf>2</inf>O<inf>3</inf>Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor | Chen, B.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
22 | 2020 | Coupling sensitivity in concentric metal-insulator-semiconductor tunnel diodes by controlling the lateral injection electrons | Chen, K.-C.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 1 | 1 | |
23 | 2020 | Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes with Engineered Oxide Local Thinning Layers | Chiang, T.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 3 | 3 | |
24 | 2020 | 金氧半穿隧二極體之耦合效應 | 陳冠竹; 胡振國; JENN-GWO HWU | 真空科技 | | | |
25 | 2019 | Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate | Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Nanotechnology | 2 | 2 | |
26 | 2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
27 | 2019 | Enhancement of Coupling Effect in Concentric Double MIS Tunnel Diodes with Local Oxide Thinning Mechanism | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2019, 5th Annual World Congress of Smart Materials, 2019 | | | |
28 | 2019 | Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor | C.F.Yang; P.J.Chen; W.C.Chen; K.W.Lin; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 5 | |
29 | 2019 | Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | 235th ECS Meeting | 2 | 0 | |
30 | 2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
31 | 2019 | Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring | Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 1 | |
32 | 2019 | Enhancement of Coupling Effect in Concentric Double MIS Tunnel Diodes with Local Oxide Thinning Mechanism | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2019, 5th Annual World Congress of Smart Materials, 2019 | | | |
33 | 2019 | Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor | Yang, C.-F.; Chen, B.-J.; Chen, W.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 5 | |
34 | 2019 | Effect of oxide thickness on the two-state characteristics in MIS(p) tunnel diode with ultrathin metal surrounded gate | Cheng, C.-F.; Yang, Y.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 2 | 3 | |
35 | 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
36 | 2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
37 | 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
38 | 2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
39 | 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
40 | 2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
41 | 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
42 | 2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
43 | 2018 | Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |
44 | 2018 | Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias | P.K.Chang; J.G.Hwu; JENN-GWO HWU | Journal of Applied Physics, | 0 | 0 | |
45 | 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
46 | 2018 | Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
47 | 2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
48 | 2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
49 | 2018 | Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric | P.K.Chang; JENN-GWO HWU | Applied Physics A | 9 | 8 | |
50 | 2018 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 2 | |
51 | 2018 | Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation | Chen Y.-H; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 3 | 2 | |
52 | 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
53 | 2017 | Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination | JENN-GWO HWU | Applied Physics A | 0 | 0 | |
54 | 2017 | Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor | T.H.Lee; C.S.Liao; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
55 | 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
56 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
57 | 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
58 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage | C.F.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
59 | 2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
60 | 2017 | Double Exponential Mechanism Controlled Transistor | Jenn-Gwo Hwu; Samuel C. Pan; Chien-Shun Liao; JENN-GWO HWU | | | | |
61 | 2017 | Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness | K.H.Tseng; C.S.Liao; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Nanotechnology | 14 | 15 | |
62 | 2017 | Enhancement of Light-to-Dark Current Ratio via Coupling Effect for MIS (p) Tunnel Diode Photo Sensors | W.T.Hou; W.C.Kao; JENN-GWO HWU | Electrochemical Society Transactions | 2 | 0 | |
63 | 2017 | Double Exponential Mechanism Controlled Transistor | Jenn-Gwo Hwu; Samuel C. Pan; Chien-Shun Liao; JENN-GWO HWU | | | | |
64 | 2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
65 | 2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |
66 | 2017 | Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Journal of Applied Physics | 5 | 4 | |
67 | 2017 | Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
68 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
69 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
70 | 2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 6 | 5 | |
71 | 2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effec | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
72 | 2017 | Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure with Concentric Circular Electrodes Controlled by Designed Substrate Bias | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 3 | |
73 | 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
74 | 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
75 | 2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |
76 | 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
77 | 2016 | Surface Nonuniformity-Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor | JENN-GWO HWU | IEEE Transactions on Electron Devices | 3 | 3 | |
78 | 2016 | Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode | JENN-GWO HWU | IEEE Transactions on Electron Devices | 12 | 11 | |
79 | 2016 | Role of Fringing Field on The Electrical Characteristics of Metal-Oxide- Semiconductor Capacitors with Co-Planar and Edge-Removed Oxides | C.F,Yang; JENN-GWO HWU | AIP Advances | 10 | 8 | |
80 | 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
81 | 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
82 | 2016 | Systems and Methods for Forming Nanowires Using Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Po-Hao Tseng; JENN-GWO HWU | | | | |
83 | 2016 | Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current | W.C.Kao; J.Y.Chen; J.G,Hwu; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
84 | 2016 | Systems and Methods for Forming Nanowires Using Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Po-Hao Tseng; JENN-GWO HWU | | | | |
85 | 2016 | Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec | H.H.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions, | 0 | 0 | |
86 | 2016 | Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance | Y.K.Lin; H.H.Lin; J.G.Hwu*; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
87 | 2016 | Surface Non-Uniformity Induced Frequency Dispersion in Accumulation Capacitance for Silicon MOS(n) Capacitor | H.H.Lin; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 3 | |
88 | 2016 | Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure | C.S.Liao; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 11 | 0 | |
89 | 2016 | Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric | J.Y.Chen; W.C.Kao; JENN-GWO HWU | Applied Physics A | 1 | 1 | |
90 | 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
91 | 2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
92 | 2016 | Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism | W.C.Kao; J.Y.Chen; J.G.Hwu; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
93 | 2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
94 | 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
95 | 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
96 | 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
97 | 2016 | Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading with an MIS Tunnel Diode Sensor | JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 7 | 7 | |
98 | 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
99 | 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
100 | 2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
101 | 2015 | Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion | JENN-GWO HWU | International Journal of Nanotechnology | 4 | 4 | |
102 | 2015 | Tunneling current induced frequency dispersion in the C-V behavior of ultra-thin oxide MOS capacitors | JENN-GWO HWU | ECS Transactions | 3 | 0 | |
103 | 2015 | Characterization of Ambient Light-Induced Inversion Current in MOS(n) Tunneling Diode With Enhanced Oxide Thickness-Dependent Performance | JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
104 | 2015 | Influence of etching-induced surface damage on device performance with consideration of minority carriers within diffusion length from depletion edge | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
105 | 2015 | Non-uniform hole current induced negative capacitance phenomenon examined by photo-illumination in MOS(n) | JENN-GWO HWU | ECS Transactions | 2 | 0 | |
106 | 2015 | Negative gate transconductance in MIS tunnel diode induced by peripheral minority carrier control mechanism | JENN-GWO HWU | ECS Transactions | 4 | 0 | |
107 | 2015 | The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films | Liao, C.-S.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
108 | 2015 | Subthreshold swing reduction by double exponential control mechanism in an MOS gated-MIS tunnel transistor | JENN-GWO HWU | IEEE Transactions on Electron Devices | 28 | 26 | |
109 | 2015 | 2-State current characteristics of MOSCAP with ultrathin oxide and metal gate | JENN-GWO HWU | ECS Solid State Letters | 3 | 3 | |
110 | 2014 | Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 32 | 29 | |
111 | 2014 | Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 14 | 13 | |
112 | 2014 | Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
113 | 2014 | Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale Research Letters | 7 | 8 | |
114 | 2014 | Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics | Pang, C.-S.; JENN-GWO HWU | AIP Advances | 8 | 7 | |
115 | 2014 | Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes | Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
116 | 2014 | Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer | Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU | Ecs Journal of Solid State Science and Technology | 8 | 9 | |
117 | 2014 | Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application | Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; JENN-GWO HWU ; WEI-CHENG TIAN | IEEE Transactions on Nanotechnology | 2 | 2 | |
118 | 2014 | Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Thin Solid Films | 1 | 1 | |
119 | 2014 | Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 11 | 13 | |
120 | 2014 | Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 1 | 1 | |
121 | 2014 | Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode | Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 15 | 14 | |
122 | 2014 | Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Solid-State Electronics | 5 | 5 | |
123 | 2013 | Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 6 | 6 | |
124 | 2013 | Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2 | Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 11 | 10 | |
125 | 2013 | Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization | Chen, T.-Y.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 7 | 6 | |
126 | 2013 | Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
127 | 2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
128 | 2013 | Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
129 | 2013 | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers | Lee, C.-W.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 3 | 3 | |
130 | 2013 | Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
131 | 2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 14 | 14 | |
132 | 2012 | Characterization of edge fringing effect on the C-V responses from depletion to deep depletion of MOS(p) capacitors with ultrathin oxide and high-κ dielectric | JENN-GWO HWU | IEEE Transactions on Electron Devices | 27 | 25 | |
133 | 2012 | Detrapping characteristics of an Al 2O 3/SiO 2/4H-SiC stacked structure with two-state trap-assisted tunnelling current behaviour | JENN-GWO HWU | Journal of Physics D: Applied Physics | 2 | 2 | |
134 | 2012 | Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure | JENN-GWO HWU | Applied Physics Letters | 8 | 7 | |
135 | 2012 | Non-planar substrate effect on the interface trap capacitance of metal-oxide-semiconductor structures with ultra thin oxides | JENN-GWO HWU | Journal of Applied Physics | 6 | 6 | |
136 | 2012 | Investigation of nonuniformity phenomenon in nanoscale SiO 2 and high-k gate dielectrics | JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
137 | 2012 | SiO 2 thickness dependence of C-V dispersion in stacked Al/HfO 2/SiO 2/4H-SiC capacitor | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
138 | 2012 | Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO 2 | JENN-GWO HWU | Applied Physics Letters | 21 | 20 | |
139 | 2012 | Photo-sensitivity enhancement of HfO 2-based MOS photodiode with specific perimeter dependency due to edge fringing field effect | JENN-GWO HWU | IEEE Sensors Journal | 20 | 20 | |
140 | 2012 | Two-state trap-assisted tunneling current characteristics in Al 2O 3/SiO 2/SiC structures with ultrathin dielectrics | JENN-GWO HWU | IEEE Transactions on Nanotechnology | 3 | 3 | |
141 | 2011 | Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides | Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
142 | 2011 | Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor | Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 2 | 0 | |
143 | 2011 | Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
144 | 2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
145 | 2011 | Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 2 | 3 | |
146 | 2011 | Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 12 | 12 | |
147 | 2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
148 | 2011 | Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides | Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 15 | 13 | |
149 | 2011 | Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
150 | 2010 | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
151 | 2010 | Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 9 | 8 | |
152 | 2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
153 | 2010 | Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure | Chen, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 3 | 3 | |
154 | 2010 | Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material | Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 26 | 24 | |
155 | 2009 | Effect of tensile stress on mos capacitors with ultra-thin gate oxide | Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU | International Journal of Electrical Engineering | | | |
156 | 2009 | Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region | Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
157 | 2009 | Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 9 | |
158 | 2009 | Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid | Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
159 | 2009 | Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 9 | 9 | |
160 | 2009 | Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 4 | 2 | |
161 | 2009 | Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE International Reliability Physics Symposium | 1 | 0 | |
162 | 2009 | Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 20 | 19 | |
163 | 2009 | Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 1 | 0 | |
164 | 2009 | Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides | Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 37 | 35 | |
165 | 2008 | 先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(3/3) | 胡振國 | | | | |
166 | 2008 | 先進CMOS元件及製程研究-總計畫(3/3) | 胡振國 | | | | |
167 | 2008 | 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(3/3) | 胡振國 | | | | |
168 | 2008 | 微電子工程學門研究發展及推動規劃(3/3) | 胡振國 | | | | |
169 | 2008 | 先進CMOS元件及製程研究-子計畫一:適用於低溫基板製程之高品質絕緣膜形成技術(2/3) | 胡振國 | | | | |
170 | 2008 | 超薄絕緣層新穎製程開發及其在矽金氧半元件之應用 (新制多年期第1年) | 胡振國 | | | | |
171 | 2008 | 微電子工程學門研究發展及推動規劃(2/3) | 胡振國 | | | | |
172 | 2008 | 先進CMOS元件及製程研究-總計畫(2/3) | 胡振國 | | | | |
173 | 2008 | Shallow level trap formation in SiO2 induced by high field and thermal stresses | Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 2 | 1 | |
174 | 2008 | Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 11 | 10 | |
175 | 2008 | Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system | Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 3 | 2 | |
176 | 2008 | Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide | Lin, C.-N.; Yang, Y.-L.; Chen, W.-T.; Lin, S.-C.; Chuang, K.-C.; JENN-GWO HWU | Microelectronic Engineering | 7 | 7 | |
177 | 2008 | Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method | Chuang, K.-C.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 0 | |
178 | 2007 | Effects of electrostatic discharge high-field current impulse on oxide breakdown | JENN-GWO HWU | Journal of Applied Physics | 10 | 8 | |
179 | 2007 | Oxide-trapped charges induced by electrostatic discharge impulse stress | JENN-GWO HWU | IEEE Transactions on Electron Devices | 10 | 7 | |
180 | 2007 | Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation | JENN-GWO HWU | Applied Physics Letters | 10 | 10 | |
181 | 2007 | Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman method | JENN-GWO HWU | IEEE Transactions on Electron Devices | 10 | 10 | |
182 | 2007 | Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation technique | JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 9 | 9 | |
183 | 2007 | Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
184 | 2006 | Impact of strain-temperature stress on ultrathin oxide | Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 | |
185 | 2006 | Enhancement in ultrathin oxide growth by thermal-induced tensile stress | Hung, C.-J.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 0 | 0 | |
186 | 2006 | Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics | Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 18 | |
187 | 2006 | Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2) | Wang, T.-M.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Sensors Journal | 11 | 11 | |
188 | 2006 | Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously | Wang, T.-M.; Chang, C.-H.; Chang, S.-J.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
189 | 2006 | Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation | Chuang, K.-C.; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
190 | 2005 | Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure | JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
191 | 2005 | Quality improvement and electrical characteristics of high-k films after receiving direct superimposed with alternative current anodic oxidation compensation | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
192 | 2005 | Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method | JENN-GWO HWU | ECS Transactions | 1 | 0 | |
193 | 2005 | 矽金氧半超薄閘極絕緣層製程研發及新型元件應用(1/3) | 胡振國 | | | | |
194 | 2005 | The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection | JENN-GWO HWU | Solid-State Electronics | 1 | 0 | |
195 | 2005 | 快速熱製程氧化層之均勻度與應力效應研究(3/3) | 胡振國 | | | | |
196 | 2004 | Quality Improvement of Ultrathin Gate
Oxide by Using Thermal Growth
Followed by SF ANO Technique | Yang, Yi-Lin; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | | |
197 | 2004 | 快速熱製程氧化層之均勻度與應力效應研究 (2/3) | 胡振國 | | | | |
198 | 2004 | High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection | JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |
199 | 2004 | Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current | JENN-GWO HWU | Journal of the Electrochemical Society | 6 | 5 | |
200 | 2004 | Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation | JENN-GWO HWU | IEEE Transactions on Electron Devices | 31 | 28 | |
201 | 2004 | Suboxide characteristics in ultrathin oxides grown under novel oxidation processes | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 5 | 5 | |
202 | 2004 | Quality improvement in LPCVD silicon nitrides by anodic and rapid thermal oxidations | JENN-GWO HWU | Electrochemical and Solid-State Letters | 5 | 5 | |
203 | 2004 | High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing | JENN-GWO HWU | IEEE Transactions on Electron Devices | 36 | 34 | |
204 | 2004 | 矽新型元件及模組技術研發─子計畫一:超薄膜層氧化技術在矽元件之應用(3/3) | 胡振國 | | | | |
205 | 2004 | Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodization | JENN-GWO HWU | Solid-State Electronics | 9 | 8 | |
206 | 2004 | Growth-then-anodization technique for reliable ultrathin gate oxides | JENN-GWO HWU | Journal of the Electrochemical Society | 4 | 2 | |
207 | 2004 | 矽新型元件及模組技術研發─總計畫(3/3) | 胡振國 | | | | |
208 | 2004 | Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO technique | JENN-GWO HWU | IEEE Electron Device Letters | 7 | 7 | |
209 | 2003 | 矽新型元件及模組技術研發(2/3)─子計畫一:超薄膜層氧化技術在矽元件之應用 | 胡振國 | | | | |
210 | 2003 | 快速熱製程氧化層之均勻度與應力效應研究(1/3) | 胡振國 | | | | |
211 | 2003 | Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application | JENN-GWO HWU | Journal of the Electrochemical Society | 10 | 9 | |
212 | 2003 | 總計畫─矽新型元件及模組技術研發(2/3) | 胡振國 | | | | |
213 | 2003 | Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current | JENN-GWO HWU | Applied Physics Letters | 7 | 7 | |
214 | 2003 | Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing | JENN-GWO HWU | IEEE Transactions on Electron Devices | 43 | 39 | |
215 | 2003 | Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodes | JENN-GWO HWU | IEEE Electron Device Letters | 2 | 2 | |
216 | 2003 | Thermal stress at wafer contact points in rapid thermal processing investigated by repeated spike treatment before oxidation | JENN-GWO HWU | Journal of Applied Physics | 2 | 2 | |
217 | 2002 | 快速熱機台設備及製程研發(3/3)總計畫 | 胡振國 | | | | |
218 | 2002 | 快速熱機台設備及製程研發(3/3)子計畫一:快速熱重覆脈衝加熱製程系統之研究(3/3) | 胡振國 | | | | |
219 | 2002 | Reduction in Leakage Current of Low-Temperature
Thin-Gate Oxide by Repeated Spike
Oxidation Technique | Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | | |
220 | 2002 | 矽新型元件及模組技術研發(1/3)─總計畫 | 胡振國 | | | | |
221 | 2002 | 矽新型元件及模組技術研發(1/3)─子計畫一:超薄膜層氧化技術在矽元件之應用 | 胡振國 | | | | |
222 | 2002 | Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing | Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |
223 | 2002 | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Hong, C.-C.; Chen, W.-R.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 5 | | |
224 | 2002 | Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing | Hong, C.-C.; Chen, J.-L.; JENN-GWO HWU | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | 1 | 2 | |
225 | 2002 | Enhanced thermally induced stress effect on an ultrathin gate oxide | Su, J.-L.; Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 8 | 8 | |
226 | 2002 | Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow | Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
227 | 2002 | Effect of mechanical stress on characteristics of silicon thermal oxides | Huang, C. H.; JENN-GWO HWU ; JIA-YUSH YEN | Japanese Journal of Applied Physics | 10 | 10 | |
228 | 2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
229 | 2001 | Novel ultra thin gate oxide growth technique by alternating current anodization | Hwu, Jenn-Gwo ; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len | 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001 | 0 | 0 | |
230 | 2001 | 液相氧化及輻射技術在超薄閘極氧化層製程之應用 | 胡振國 | | | | |
231 | 2001 | 快速熱機台設備及製程研發(2/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究 | 胡振國 | | | | |
232 | 2001 | Stress effect on the kinetics of silicon thermal oxidation | Yen, J. Y.; JENN-GWO HWU ; JIA-YUSH YEN | Journal of Applied Physics | 35 | 32 | |
233 | 2001 | An on-chip temperature sensor by utilizing a MOS tunneling diode | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 32 | 27 | |
234 | 2001 | Application of anodization to reoxidize silicon nitride film | Lin, Y.-P.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | | |
235 | 2001 | 快速熱機台設備及製程研發(2/3)─總計畫 | 胡振國 | | | | |
236 | 2001 | Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress | Huang, C.-H.; JENN-GWO HWU | Journal of Applied Physics | 4 | 4 | |
237 | 2001 | Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal | Chen, Y.-C.; Lee, C.-Y.; JENN-GWO HWU | Solid-State Electronics | 12 | 12 | |
238 | 2001 | Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress | Hong, C.-C.; JENN-GWO HWU | Applied Physics Letters | 17 | 18 | |
239 | 2001 | Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection | Huang, C.-H.; JENN-GWO HWU | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 3 | 3 | |
240 | 2001 | Improvement in oxide thickness uniformity by repeated spike oxidation | Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 4 | 4 | |
241 | 2000 | 低漏流高穩定性超薄閘極氧化層製程研究 | 胡振國 | | | | |
242 | 2000 | Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing | JENN-GWO HWU | Solid-State Electronics | 6 | 3 | |
243 | 2000 | 快速熱機台設備及製程研發(1/3)─子計畫一:快速熱重覆脈衝加熱製程系統之研究 | 胡振國 | | | | |
244 | 2000 | Enhancement of silicon oxidation rate due to tensile mechanical stress | JENN-GWO HWU ; JIA-YUSH YEN | Applied Physics Letters | 38 | 35 | |
245 | 2000 | 快速熱機台設備及製程研發(1/3)─總計畫 | 胡振國 | | | | |
246 | 1999 | The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides | Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo ; Wung, Tzong-Shyan | IEEE Transactions on Semiconductor Manufacturing | | | |
247 | 1999 | Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA) | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 3 | 3 | |
248 | 1999 | The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides | Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 12 | 10 | |
249 | 1999 | Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation | Yeh, K.-L.; Jeng, M.-J.; JENN-GWO HWU | Solid-State Electronics | 6 | 4 | |
250 | 1999 | 半導體關鍵設備研發(III)─子計畫一:快速熱處理機台自動化研究 | 胡振國 | | | | |
251 | 1999 | 參加1998國際電子元件材料會議 | 胡振國 | | | | |
252 | 1999 | 快速熱氧化層製程對厚度均勻度及電特性影響之研究 | 胡振國 | | | | |
253 | 1999 | ─半導體關鍵設備研發-總計畫(III) | 胡振國 | | | | |
254 | 1998 | Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area | Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 5 | 4 | |
255 | 1998 | Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method | Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
256 | 1998 | 半導體工程人才培育計畫─子計畫二:矽金氧半光電元件製作(3/3) | 胡振國 | | | | |
257 | 1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
258 | 1998 | 半導體關鍵設備研發(II)─子計畫一:快速熱處理機台自動化研究 | 胡振國 | | | | |
259 | 1998 | Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation | Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering | | | |
260 | 1998 | Application of anodization followed by rapid thermal treatment to thin gate oxide growth | Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
261 | 1998 | 低溫預成長再高溫快速熱處理備製薄閘極氧化層 | 胡振國 | | | | |
262 | 1997 | Analog maximum, median and minimum circuit | Liu, Shen-Iuan ; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo | Circuits and Systems, 1997. ISCAS '97. | 0 | 0 | |
263 | 1997 | 17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide | JENN-GWO HWU | IEEE Electron Device Letters | 12 | 7 | |
264 | 1997 | 以液相沉積法將雜質含入矽氧化層技術之研發 | 胡振國 | | | | |
265 | 1997 | 半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作(II) | 胡振國 | | | | |
266 | 1997 | Analog maximum, median and minimum circuit | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |
267 | 1997 | Improvement in radiation-hard CMOS logic gates for noise margin | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |
268 | 1997 | Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 4 | 0 | |
269 | 1997 | Effect of postoxidation annealing on the reliability of rapid thermal thin gate oxides | JENN-GWO HWU | IEEE Electron Device Letters | 1 | 0 | |
270 | 1997 | New temperature compensation method for Si wafers in rapid thermal processor using separated Si rings as susceptors | JENN-GWO HWU | Materials Research Society Symposium - Proceedings | | | |
271 | 1997 | 半導體關鍵設備研發─子計畫一:快速熱處理機台自動化研究(I) | 胡振國 | | | | |
272 | 1996 | Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics | Lee, K.-C.; JENN-GWO HWU | Applied Surface Science | 0 | 0 | |
273 | 1996 | 半導體工程人才培育計畫─半導體工程人才培育計畫:子計畫二:矽金氧半光電元件製作 | 胡振國 | | | | |
274 | 1996 | Rapid thermal post-metallization annealing effect on thin gate oxides | Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU | Applied Surface Science | 4 | 3 | |
275 | 1996 | Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 11 | 10 | |
276 | 1996 | Process control of rapid thermal N2O-annealed thin gate oxides | Huang, Y.-Z.; Lu, W.-S.; JENN-GWO HWU | Solid-State Electronics | 0 | 0 | |
277 | 1996 | Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process | Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 11 | 9 | |
278 | 1996 | 複合式半導體微型壓力感測計之研究(總計畫) | 呂學士 ; 胡振國 ; 張培仁 | | | | |
279 | 1996 | Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification | Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 25 | 23 | |
280 | 1996 | 快速熱技術在矽金氧半元件制程之應用 | 胡振國 | | | | |
281 | 1996 | Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method | Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | IEEE Photonics Technology Letters | 7 | 7 | |
282 | 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
283 | 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, K. C.; Hwu, Jenn-Gwo | | | | |
284 | 1995 | 以快速熱程序生長及退火薄閘極氧化層 | 胡振國 | | | | |
285 | 1995 | Preparation of fluorinated gate oxides by liquid phase deposition following rapid thermal oxidation | JENN-GWO HWU | Applied Physics Letters | | | |
286 | 1995 | 複合式半導體微型壓力感測器之研究\─複合式半導體微型壓力感測器之研究:子計畫一-壓力感測器用之矽金氧半場效電晶體放大器製作及穩定 | 胡振國 | | | | |
287 | 1995 | Rapid thermal post-metallization annealing in thin gate oxides | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 1 | 1 | |
288 | 1995 | A Systematic Study of the Initial Electrical and Radiation Hardness Properties of Reoxidized Nitrided Oxides by Rapid Thermal Processing | JENN-GWO HWU | IEEE Transactions on Nuclear Science | 1 | 1 | |
289 | 1995 | Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides | JENN-GWO HWU | Solid State Electronics | 2 | 4 | |
290 | 1995 | Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides | 胡振國 ; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo | | | | |
291 | 1995 | Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
292 | 1994 | Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 6 | |
293 | 1994 | Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
294 | 1994 | Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxides | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 2 | 3 | |
295 | 1994 | Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2O | JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
296 | 1994 | Design and Fabrication of Basic Silicon MOS Digital Ciruits | Hwu, Jenn-Gwo | | | | |
297 | 1994 | Eliminating the surface inversion layer under the field oxide by low pressure rapid thermal annealing | JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
298 | 1994 | Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation | Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; SI-CHEN LEE ; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 2 | 0 | |
299 | 1994 | Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 2: Letters | 1 | 1 | |
300 | 1994 | Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics | Lee, K. C.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
301 | 1994 | Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides | 胡振國 ; Jeng, M. J.; Lin, H. S. | | 1 | 1 | |
302 | 1994 | Stable Si MOS Devices with Oxynitride Gate Dielectrics | Hwu, Jenn-Gwo | | | | |
303 | 1994 | Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment | Lu, W. S.; 胡振國 ; Chou, J. S.; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, Si-Chen | 1994 International EDMS | | | |
304 | 1994 | 以含氮氧化矽閘極製程製作高穩定度矽金氧半元件 | 胡振國 | | | | |
305 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
306 | 1994 | Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealings | Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 0 | 0 | |
307 | 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | | | | |
308 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | Proceedings of Electronic Devices and Materials Symposium | | | |
309 | 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
310 | 1993 | 抗輻射快速熱再氧化氮化氧化層製程之研究 | 胡振國 | | | | |
311 | 1993 | Electrical Analysis of Wirings in Thin-Film Packaging (I) | Hwu, Jenn-Gwo ; Wu, Ruey-Beei | | | | |
312 | 1993 | Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides | Hwu, Jenn-Gwo | | | | |
313 | 1993 | Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
314 | 1993 | Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
315 | 1993 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, G. C.; Hwu, Jenn-Gwo | | | | |
316 | 1993 | Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
317 | 1993 | Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |
318 | 1993 | Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal | JENN-GWO HWU | IEEE Electron Device Letters | 12 | 11 | |
319 | 1993 | Aspect ratio design consideration for radiation-hard CMOS inverters | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation | 0 | 0 | |
320 | 1992 | Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method | Lin, Jing-Jenn; Lin, Kuan-Chin; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | 3 | |
321 | 1992 | Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
322 | 1992 | Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing | 胡振國 ; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
323 | 1992 | Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides | Hwu, Jenn-Gwo | | | | |
324 | 1992 | Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors | Lin, Jin-Jenn; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1 | 1 | |
325 | 1992 | Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
326 | 1992 | Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices | Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 13 | 12 | |
327 | 1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
328 | 1992 | Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes | Chang-Liao, Kuei-Shu; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 2: Letters | 2 | 0 | |
329 | 1992 | A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits | Chen, C.-C.; Liu, S.-C.; Hsiao, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Nuclear Science | 15 | 12 | |
330 | 1991 | Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments | Chang-Liao, K. S.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
331 | 1991 | Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments | Chang-Liao, K.-S.; JENN-GWO HWU | Solid State Electronics | 10 | 0 | |
332 | 1991 | Effect of oxide resistance on the characterization of interface trap density in MOS structures | Lin, J.-J.; JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
333 | 1991 | Radiation Reliability of Devices Used in Optical Fiber Communication | Hwu, Jenn-Gwo | | | | |
334 | 1991 | Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits | Hwu, Jenn-Gwo | | | | |
335 | 1991 | 光纖通訊用元件之輻射穩定度研究 | 胡振國 | | | | |
336 | 1991 | Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | | | | |
337 | 1991 | 抗輻射金氧半元件製程及電路輻射穩定度研究 | 胡振國 | | | | |
338 | 1990 | Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency | Hwu, J.-G.; Lin, S.-T.; HwuJG | Circuits, Devices and Systems, IEE Proceedings G | | | |
339 | 1990 | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | Hwu, Jenn-Gwo ; Ho, I-Hsiu | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | 3 | | |
340 | 1990 | Improvement of oxide leakage currents in mos structures by postirradiation annealing | Lin, J.-J.; JENN-GWO HWU | Japanese Journal of Applied Physics | 0 | 2 | |
341 | 1990 | Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments | 胡振國 ; Chang-Liao, K. S.; Hwu, Jenn-Gwo | | | | |
342 | 1990 | Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments | JENN-GWO HWU | IEEE Electron Device Letters | 11 | 13 | |
343 | 1990 | A Study of the Leakage Property of Thin Gate Oxides | Hwu, Jenn-Gwo | | | | |
344 | 1990 | Thin-oxide thickness measurement in ellipsometry by a wafer rotation method | JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
345 | 1990 | Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V technique | JENN-GWO HWU | IEE proceedings. Part G. Electronic circuits and systems | | | |
346 | 1990 | Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique | JENN-GWO HWU | Journal of Physics and Chemistry of Solids | 0 | 0 | |
347 | 1990 | Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
348 | 1990 | Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments | Hwu, Jenn-Gwo | | | | |
349 | 1990 | Characterization Si02 by DC Resistance Measurement Tehcnique | Hwu, Jenn-Gwo | | | | |
350 | 1989 | Comparison Between Charge-Temperature and Bias-Temperature Agings | Hwu, Jenn-Gwo | | | | |
351 | 1989 | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | 胡振國 ; Lin, J. J.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of Electronic Devices and Materials Symposium | | | |
352 | 1989 | Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices | Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 0 | 0 | |
353 | 1989 | Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments | Fu, S.-L.; JENN-GWO HWU | Solid State Electronics | 18 | 22 | |
354 | 1989 | Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior | 胡振國 ; Lin, S. T. ; Hwu, Jenn-Gwo | | | | |
355 | 1989 | A Study of the Radiation Effect on Tantalum Oxide Films | Hwu, Jenn-Gwo | | | | |
356 | 1989 | Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors | Hwu, Jenn-Gwo | | | | |
357 | 1988 | Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors | Hwu, J.-G. ; Lee, G. S.; Lee, Si-Chen ; Wang, Way-Seen | IEEE Transactions on Nuclear Science | 11 | 10 | |
358 | 1988 | C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation | Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 13 | |
359 | 1988 | The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient | Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 8 | 8 | |
360 | 1987 | Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide | 胡振國 ; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo ; Wang, Way-Seen | Journal of Applied Physics | | | |
361 | 1987 | Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
362 | 1987 | Charge Temperature Effects on Co-60 Irradiated Mos Capacitors | Lee, G. S.; 胡振國 ; 李嗣涔 ; 王維新; Wang, Way-Seen | The 13th EDMS | | | |
363 | 1987 | Studies of the Radiation-Hardening CMOS Processes | Hwu, Jenn-Gwo ; Lee, Si-Chen ; Wang, Way-Seen | | | | |
364 | 1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |
365 | 1987 | The Effect of Postoxidation Cooling Ambient on Si02 Property | Hwu, Jenn-Gwo | | | | |
366 | 1987 | Direct Indication of Interface Trap States in an Mos Capacitor From the Peaks of Optical illumination-induced Capacitances | JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
367 | 1987 | Clockwise C-V hysteresis phenomena of metal-tantalum-oxide-silicon-oxide- silicon ( p) capacitors due to leakage current through tantalum oxide | JENN-GWO HWU | Journal of Applied Physics | 17 | 16 | |
368 | 1987 | Constant peak field distribution and voltage dropping in the oxide layer of a MOS capacitor during charge-temperature aging | JENN-GWO HWU | International Journal of Electronics | 0 | 0 | |
369 | 1986 | The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors | Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU | International Journal of Electronics | 1 | 1 | |
370 | 1986 | Radiation Effects on the Oxide Properties of Silicon MOS Capacitor | 胡振國 ; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔 ; Hwu, Jenn-Gwo ; Wang, Way-Seen; Lee, Si-Chen | Electronic Devices and Materials Symposium | | | |
371 | 1986 | Relationship between mobile charges and interface trap states in silicon mos capacitors | Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
372 | 1986 | Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique | Hwu, J.G.; Wang, W.S.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 10 | 9 | |
373 | 1986 | Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique | Lin, C.M.; Wang, W.S.; JENN-GWO HWU | Thin Solid Films | 8 | 6 | |
374 | 1986 | Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor | Hwu, Jenn-Gwo | | | | |
375 | 1985 | Impurity-related interface trap in an Al/SiO2/Si(P) capacitor | JENN-GWO HWU | Thin Solid Films | 3 | 3 | |
376 | 1985 | The Effect of Charge-Temperature Aging on n-MOSFET | 胡振國 ; Lin, C. M.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of ROC Electronic Devices and Materials Symposium | | | |
377 | 1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
378 | 1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 8th EDMS | | | |